A Novel Layer-By-Layer Hetero-Epitaxy Of Germanium On Silicon (100) Surface

1998 ◽  
Vol 533 ◽  
Author(s):  
S. Sugahara ◽  
M. Matsuyama ◽  
K. Hosaka ◽  
K. Ikeda ◽  
Y. Uchida ◽  
...  
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Modulation ◽  
Layer By Layer ◽  
Isothermal Conditions ◽  
First Time

AbstractLayer-by-layer hetero-epitaxy of Ge has been successfully demonstrated on the Si(100) surface by combining the initial IML-Ge film growth on the Si surface and the successive Ge atomic-layer-epitxy (ALE), for the first time. The former was achieved using the substrate temperature modulation with alternate exposures of GeCL4 and atomic H, and the later was established by cyclic exposures of (CH 3)2GeH2 and atomic H under isothermal conditions. XPS measurements confirmed a discrete and uniform increase in the grown Ge film thickness with one monolayer/cycle step up to the critical Ge thickness, and no C contamination at the Ge/Si interface. Critical exposure for the saturated Ge adsorption was different from that for the homo-ALE on the bulk Ge surface.

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

Atomic Layer Growth of SiO2 on Si(100) Using the Sequential Deposition of SiCl4 and H2O

1993 ◽  
Vol 334 ◽  
Author(s):  
Ofer Sneh ◽  
Michael L. Wise ◽  
Lynne A. Okada ◽  
Andrew W. Ott ◽  
Steven M. George
Keyword(s):  
High Pressure ◽  
Film Growth ◽  
Atomic Layer ◽  
Reaction Scheme ◽  
Layer Growth ◽  
Film Deposition ◽  
Layer By Layer ◽  
High Pressure Cell ◽  
Experimental Apparatus ◽  
Binary Reaction

AbstractThis study explored the surface chemistry and the promise of the binary reaction scheme:(A) Si-OH+SiCl4 → Si-Cl + HCl(B) Si-Cl + H2O → Si-OH + HClfor controlled SiO2 film deposition. In this binary ABAB… sequence, each surface reaction may be self-terminating and ABAB… repetitive cycles may produce layer-by-layer controlled deposition. Using this approach, the growth of SiO2 thin films on Si(100) with atomic layer control was achieved at 600 K with pressures in the 1 to 50 Torr range. The experiments were performed in a small high pressure cell situated in a UHV chamber. This design couples CVD conditions for film growth with a UHV environment for surface analysis using laser-induced thermal desorption (LITD), temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). The controlled layer-by-layer deposition of SiO2 on Si(100) was demonstrated and optimized using these techniques. A stoichiometric and chlorine-free SiO2 film was also produced as revealed by TPD and AES analysis. SiO2 growth rates of approximately 1 ML of oxygen per AB cycle were obtained at 600 K. These studies demonstrate the methodology of using the combined UHV/high pressure experimental apparatus for optimizing a binary reaction CVD process.

scholarly journals A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 164
Author(s):  
Jau-Shiung Fang ◽  
Yu-Fei Sie ◽  
Yi-Lung Cheng ◽  
Giin-Shan Chen
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Open Circuit ◽  
Electrochemical Process ◽  
Layer Growth ◽  
Film Deposition ◽  
Layer By Layer ◽  
Cu Interconnects ◽  
Electrochemical Growth ◽  
Growth Method

A layer-by-layer deposition is essential for fabricating the Cu interconnects in a nanoscale-sized microelectronics because the gap-filling capability limits the film deposition step coverage on trenches/vias. Conventional layer-by-layer electrochemical deposition of Cu typically works by using two electrolytes, i.e., a sacrificial Pb electrolyte and a Cu electrolyte. However, the use of a Pb electrolyte is known to cause environmental issues. This study presents an Mn monolayer, which mediated the electrochemical growth of Cu(Mn) film through a sequence of alternating an underpotential deposition (UPD) of Mn, replacing the conventionally used UPD-Pb, with a surface-limited redox replacement (SLRR) of Cu. The use of the sacrificial Mn monolayer uniquely provides redox replacement by Cu2+ owing to the standard reductive potential differences. Repeating the sequence of the UPD-Mn followed by the SLRR-Cu enables Cu(Mn) film growth in an atomic layer growth manner. Further, controlling the time of open circuit potential (OCP) during the Cu-SLRR yields a technique to control the content of the resultant Cu(Mn) film. A longer OCP time caused more replacement of the UPD-Mn by the Cu2+, thus resulting in a Cu(Mn) film with a higher Cu concentration. The proposed layer-by-layer growth method offers a wet, chemistry-based deposition capable of fabricating Cu interconnects without the use of the barrier layer and can be of interest in microelectronics.

The Microstructure of Copper Films Deposited by E-Beam Evaporation onto Thin Polyimide Films

1984 ◽  
Vol 40 ◽  
Author(s):  
J. T. Wetzel ◽  
D. A. Smith ◽  
G. Appleby-Mougham
Keyword(s):  
Electron Beam ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Grain Growth ◽  
Film Growth ◽  
Electron Beam Evaporation ◽  
Copper Films ◽  
Polyimide Films ◽  
Deposition Rates ◽  
Substrate Temperatures

AbstractCopper was deposited by electron beam evaporation onto both freshly cleaved bare and polyimide-coated (001) NaCl at substrate temperatures of 20°, 100°, 200° and 300°C at rates of 2 and 20,Åsec−1. For all substrate temperatures and deposition rates investigated, the Volmer-Weber mode of film growth was observed for copper both on polyimide and on NaCl. Comparisons of film growth on the two substrates for a constant substrate temperature revealed differences in film thickness at which copper became continuous or formed a completely coalesced film. It was found that copper grown on polyimide formed continuous and completely coalesced films at smaller film thicknesses than on NaCI. However once a completely coalesced film was obtained, grain growth in the copper films proceeded more rapidly on NaC1 substrates than on polyimide substrates.

In-Situ Optical Diagnostics During Pulsed-Laser Deposition of Magnetoresistive La-Ca-Mn-O Films on Silicon Substrates

1996 ◽  
Vol 441 ◽  
Author(s):  
P.-J. Kung ◽  
J. E. Cosgrove ◽  
K. Kinsella ◽  
D. G. Hamblen
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Target Surface ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Ft Ir

AbstractDuring pulsed-laser deposition of La0.67Ca0.33MnO3 films on silicon substrates, a system that consists of visible optical-emission spectroscopy (OES) and Fourier transform infrared (FT-IR) spectroscopy is employed to perform in-situ diagnosis of the laser-induced plume and to monitor the substrate temperature and the film thickness. The effects of oxygen pressure, laser fluence, and distance from the target surface on emission spectra were studied. In FT-IR measurements, the slopes of the reflectance versus wavenumber curves were observed to increase with film thickness and hence with time, which provides end-point detection during the film growth. La0.67Ca0.33MnO3 films with (100), (110), and mixed orientations, depending on the substrate temperature, were deposited on yttria-stabilized zirconia (YSZ) buffered Si(100) and Si(111) substrates. In a magnetic field of 5 T, the maximum magnetoresistance (MR) values of 250% at 195 K and 164% at 140 K were observed in the as-deposited (110) and (100) films, respectively.

Atomic Layer Etching of Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
I. H. Libon ◽  
C. Voelkmann ◽  
V. Petrova-Koch ◽  
F. Koch
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Lower Energy ◽  
Room Temperature ◽  
Size Dependence ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Energy Limit ◽  
First Time ◽  
Atomic Layer Etching

AbstractIn this work we describe the controlled shifting of the PL peak of p+ (10 mΩcm) porous silicon (PoSi) by means of atomic layer etching (ALEP). We hereby study the cluster-size dependence of the PL of this material. By this technique of repeated oxidation by H2O2 and stripping of the oxidized surface layer, we reduced the size of the crystallites layer by layer. In all previous reports the PoSi PL appeared to have a natural lower energy limit of ≈ 1.4 eV. We report for the first time a continuous shift of the PoSi PL peak between 1.01 and 1.20 eV. This observation allows us to draw conclusions for the luminescence mechanism: it proves that geometrical quantum confinement in Si crystallites is responsible for the efficient room-temperature PL in PoSi near the indirect bandgap of c-Si. Together with observations of size-independent PL peaks around 1.6 eV in thermally oxidized samples this result indicates that the PoSi PL cannot be described by one origin alone. Both the existence of molecular centers and the geometrical quantum confinement are valid in their specific range of etching and post-anodic treatment parameters.

scholarly journals Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 117
Author(s):  
Alexander Rogozhin ◽  
Andrey Miakonkikh ◽  
Elizaveta Smirnova ◽  
Andrey Lomov ◽  
Sergey Simakin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Layer Deposition ◽  
Substrate Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Film Growth ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
Force Microscopy ◽  
Si Substrates ◽  
Layer Deposition

Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)2 and oxygen plasma on the modified surface of silicon and SiO2/Si substrates. The crystal structure, chemical composition, and morphology of films were characterized by grazing incidence XRD (GXRD), secondary ion mass spectrometry (SIMS), and atomic force microscopy (AFM) techniques, respectively. It was found that the mechanism of film growth depends crucially on the substrate temperature. The GXRD and SIMS analysis show that at substrate temperature T = 375 °C, an abrupt change in surface reaction mechanisms occurs, leading to the changing in film composition from RuO2 at low temperatures to pure Ru film at higher temperatures. It was confirmed by electrical resistivity measurements for Ru-based films. Mechanical stress in the films was also analyzed, and it was suggested that this factor increases the surface roughness of growing Ru films. The lowest surface roughness ~1.5 nm was achieved with a film thickness of 29 nm using SiO2/Si-substrate for deposition at 375 °C. The measured resistivity of Ru film is 18–19 µOhm·cm (as deposited).

scholarly journals Growth of Ultrathin Al2O3 Films on n-InP Substrates as Insulating Layers by RF Magnetron Sputtering and Study on the Optical and Dielectric Properties

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 341 ◽  
Author(s):  
Xiufeng Tang ◽  
Zhixin Li ◽  
Huizhen Liao ◽  
Jiong Zhang
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
Optical Absorption Coefficient ◽  
Layer By Layer ◽  
Al2o3 Film ◽  
Minimum Thickness ◽  
Inp Substrates ◽  
Al2o3 Films

Here, we report an explorative study of an attempt to fabricate ultrathin aluminum oxide films on n-InP substrates by radio-frequency (RF) magnetron sputtering as a candidate for insulating layers in semiconductor lasers for optical communication. Film thickness and morphology were monitored to study the film growth and to explore the minimum thickness of a continuous film that RF magnetron sputtering could achieve. Originating from the weak wettability between the n-InP substrate and the Al2O3 film, Al2O3 films firstly grew in an island pattern which then turned into a layer-by-layer pattern when those islands became connected and continuous. Uniform and compact Al2O3 films were obtained when the film thickness reached 40 nm. The average transmittance, optical band gap, and optical absorption coefficient at a wavelength of 1550 nm of this Al2O3 film were about 80%, 3.72 eV, and 3.0 × 104 cm−1, respectively. At a frequency of 1 MHz, the permittivity, dielectric loss, and electrical resistivity were 8.96, 0.31, and 5 × 1010 Ω·cm, respectively. This work provides valuable references for the application of Al2O3 ultrathin films as insulating layers in micro-and opto-electronics.

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