The making of high-Tc layered superconductors—from atomic layer-by-layer film growth to a jelly-roll process for bulk conductors

1992 ◽  
Author(s):  
C. C. Tsuei ◽  
T. Frey ◽  
C. C. Chi ◽  
T. Shaw ◽  
D. T. Shaw ◽  
...  
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Layered Superconductors ◽  
High Tc ◽  
Layer Film ◽  
Jelly Roll

Atomic Layer Growth of SiO2 on Si(100) Using the Sequential Deposition of SiCl4 and H2O

1993 ◽  
Vol 334 ◽  
Author(s):  
Ofer Sneh ◽  
Michael L. Wise ◽  
Lynne A. Okada ◽  
Andrew W. Ott ◽  
Steven M. George
Keyword(s):  
High Pressure ◽  
Film Growth ◽  
Atomic Layer ◽  
Reaction Scheme ◽  
Layer Growth ◽  
Film Deposition ◽  
Layer By Layer ◽  
High Pressure Cell ◽  
Experimental Apparatus ◽  
Binary Reaction

AbstractThis study explored the surface chemistry and the promise of the binary reaction scheme:(A) Si-OH+SiCl4 → Si-Cl + HCl(B) Si-Cl + H2O → Si-OH + HClfor controlled SiO2 film deposition. In this binary ABAB… sequence, each surface reaction may be self-terminating and ABAB… repetitive cycles may produce layer-by-layer controlled deposition. Using this approach, the growth of SiO2 thin films on Si(100) with atomic layer control was achieved at 600 K with pressures in the 1 to 50 Torr range. The experiments were performed in a small high pressure cell situated in a UHV chamber. This design couples CVD conditions for film growth with a UHV environment for surface analysis using laser-induced thermal desorption (LITD), temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). The controlled layer-by-layer deposition of SiO2 on Si(100) was demonstrated and optimized using these techniques. A stoichiometric and chlorine-free SiO2 film was also produced as revealed by TPD and AES analysis. SiO2 growth rates of approximately 1 ML of oxygen per AB cycle were obtained at 600 K. These studies demonstrate the methodology of using the combined UHV/high pressure experimental apparatus for optimizing a binary reaction CVD process.

A Novel Layer-By-Layer Hetero-Epitaxy Of Germanium On Silicon (100) Surface

1998 ◽  
Vol 533 ◽  
Author(s):  
S. Sugahara ◽  
M. Matsuyama ◽  
K. Hosaka ◽  
K. Ikeda ◽  
Y. Uchida ◽  
...  
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Modulation ◽  
Layer By Layer ◽  
Isothermal Conditions ◽  
First Time

AbstractLayer-by-layer hetero-epitaxy of Ge has been successfully demonstrated on the Si(100) surface by combining the initial IML-Ge film growth on the Si surface and the successive Ge atomic-layer-epitxy (ALE), for the first time. The former was achieved using the substrate temperature modulation with alternate exposures of GeCL4 and atomic H, and the later was established by cyclic exposures of (CH 3)2GeH2 and atomic H under isothermal conditions. XPS measurements confirmed a discrete and uniform increase in the grown Ge film thickness with one monolayer/cycle step up to the critical Ge thickness, and no C contamination at the Ge/Si interface. Critical exposure for the saturated Ge adsorption was different from that for the homo-ALE on the bulk Ge surface.

scholarly journals A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 164
Author(s):  
Jau-Shiung Fang ◽  
Yu-Fei Sie ◽  
Yi-Lung Cheng ◽  
Giin-Shan Chen
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Open Circuit ◽  
Electrochemical Process ◽  
Layer Growth ◽  
Film Deposition ◽  
Layer By Layer ◽  
Cu Interconnects ◽  
Electrochemical Growth ◽  
Growth Method

A layer-by-layer deposition is essential for fabricating the Cu interconnects in a nanoscale-sized microelectronics because the gap-filling capability limits the film deposition step coverage on trenches/vias. Conventional layer-by-layer electrochemical deposition of Cu typically works by using two electrolytes, i.e., a sacrificial Pb electrolyte and a Cu electrolyte. However, the use of a Pb electrolyte is known to cause environmental issues. This study presents an Mn monolayer, which mediated the electrochemical growth of Cu(Mn) film through a sequence of alternating an underpotential deposition (UPD) of Mn, replacing the conventionally used UPD-Pb, with a surface-limited redox replacement (SLRR) of Cu. The use of the sacrificial Mn monolayer uniquely provides redox replacement by Cu2+ owing to the standard reductive potential differences. Repeating the sequence of the UPD-Mn followed by the SLRR-Cu enables Cu(Mn) film growth in an atomic layer growth manner. Further, controlling the time of open circuit potential (OCP) during the Cu-SLRR yields a technique to control the content of the resultant Cu(Mn) film. A longer OCP time caused more replacement of the UPD-Mn by the Cu2+, thus resulting in a Cu(Mn) film with a higher Cu concentration. The proposed layer-by-layer growth method offers a wet, chemistry-based deposition capable of fabricating Cu interconnects without the use of the barrier layer and can be of interest in microelectronics.

High Tc Tri-Layers for Josephson Junctions

1992 ◽  
Vol 275 ◽  
Author(s):  
J. N. Eckstein ◽  
I. Bozovic ◽  
M. E. Klausmeier-Brown ◽  
G. F. Virshup
Keyword(s):  
Electronic Properties ◽  
Josephson Junctions ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Layer By Layer ◽  
High Tc ◽  
Layer Structures ◽  
Trivalent Cations ◽  
Metastable Compounds ◽  
Molecular Layers

ABSTRACTAtomic Layer-by-Layer Molecular Beam Epitaxy (ALL-MBE) of high Tc superconducting films can be used to grow defect-free and flat multi-layer structures in which superconducting molecular layers are stacked with molecular layers having other electronic properties. In particular, tri-layers consisting of c-axis Bi2Sr2CaCu2O8 base and counter electrode layers, each several hundred angstroms thick, have been grown separated by single molecular layers of metastable compounds such as Bi2Sr2Can-1CunO2+4 where n ranged from 5 to 11. Furthermore, the electronic properties of such barrier layers have been modified by doping with trivalent cations. Using such structures, tri-layer Josephson junctions have been fabricated which exhibit hysteretic I - V characteristics. Other doping schemes have given insulating layers which dominate c-axis transport, demonstrating the ability of this technique to grow thin, 25 Å, single molecular layers that are free of pinholes.

Thin Film Processing for High-Tc Superconductors of Bi-System

1989 ◽  
Vol 169 ◽  
Author(s):  
K. Wasa ◽  
H. Adachi ◽  
K. Hirochi ◽  
Y. Ichikawa ◽  
K. Setsune
Keyword(s):  
Thin Film ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Layer By Layer ◽  
High Tc Superconductors ◽  
High Tc ◽  
Superconducting Phases ◽  
High Tc Phase ◽  
Deposition Processes

AbstractBasic thin film deposition processes for the high-Tc superconductors of Bi-systems are described. There appear several superconducting phases including the low-Tc phase Bi2Sr2Ca1 Cu2Ox and the high-Tc phase Bi2Sr2Ca2Cu3Ox. Thin films with these superconducting phases are synthesized by a selection of the substrate temperature Ts during the deposition : the high-Tc phase with Tc=100K is synthesized at Ts>800 °C; the low-Tc phase with Tc=80K, at Ts<600°C. However, these films often comprise show structure comprizing the different superconducting phases.The close control of the superconducting phase has been achieved by the layer-by-layer deposition in the atomic layer epitaxy process.

The Nature of Intrinsic Stresses in Thin Copper Condensates Deposited on Solid State Substrates

2018 ◽  
Vol 54 ◽  
pp. 66-74
Author(s):  
Bohdan Koman ◽  
Olexiy A. Balitskii ◽  
Volodymyr Yuzevych
Keyword(s):  
Solid State ◽  
Surface Energy ◽  
Size Effect ◽  
Interaction Energy ◽  
Film Growth ◽  
Mechanical Stresses ◽  
Layer By Layer ◽  
Layer Film ◽  
Energy Parameters ◽  
Layer Deposition

Size effect for intrinsic stresses and thermodynamics of films formation established taking into account the nature of stresses in copper condensates deposited on solid state substrates. We believe that surface energy changes during layer by layer deposition in such condensates with chaotically dispersed areas (possessing different values of Young’s modulus) define the film’s mechanic parameters. The quantitative estimations of mechanical stresses are calculated for layer by layer film growth. The resulting intrinsic stresses (ISs) in copper condensates nature from local static ones, superposed within the area of a film. The latter arose due to anisotropy of interface interaction energy parameters.

Layer-by-Layer Film Growth Using Polysaccharides and Recombinant Polypeptides: A Combinatorial Approach

2013 ◽  
Vol 117 (22) ◽  
pp. 6839-6848 ◽  
Author(s):  
Rui R. Costa ◽  
Ana M. Testera ◽  
F. Javier Arias ◽  
J. Carlos Rodríguez-Cabello ◽  
João F. Mano
Keyword(s):  
Film Growth ◽  
Layer By Layer ◽  
Combinatorial Approach ◽  
Layer Film ◽  
Recombinant Polypeptides

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

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