Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors

2013 ◽  
Vol 114 (8) ◽  
pp. 083718 ◽  
Author(s):  
Ramya Yeluri ◽  
Xiang Liu ◽  
Brian L. Swenson ◽  
Jing Lu ◽  
Stacia Keller ◽  
...  
Keyword(s):  
Valence Band ◽  
Wide Bandgap ◽  
Band Offset ◽  
Valence Band Offset ◽  
Wide Bandgap Semiconductors ◽  
Capacitance Voltage ◽  
Bandgap Semiconductors ◽  
Positive Valence

Optical characterization of wide bandgap semiconductors

2000 ◽  
Vol 364 (1-2) ◽  
pp. 98-106 ◽  
Author(s):  
N.V. Edwards ◽  
M.D. Bremser ◽  
A.D. Batchelor ◽  
I.A. Buyanova ◽  
L.D. Madsen ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Bandgap Semiconductors

Direct Optical Measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si (100) by Heterojunction Internal Photoemission

1998 ◽  
Vol 533 ◽  
Author(s):  
C. L. Chang ◽  
L. P. Rokhinson ◽  
J. C. Sturm
Keyword(s):  
Valence Band ◽  
Optical Measurement ◽  
Chemical Vapor ◽  
Band Alignment ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Internal Photoemission ◽  
Capacitance Voltage ◽  
Absorption Measurements

AbstractOptical absorption measurements have been performed to study the effect of carbon on the valence band offset of compressively strained p+ Si1−x−yGexCy/(100) p− Si heterojunction internal photoemission structures grown by Rapid Thermal Chemical Vapor Deposition (RTCVD) with substitutional carbon levels up to 2.5%. Results indicated that carbon decreased the valence band offset by 26 ± 1 meV/ %C. Results from optical measurement in this study agreed with previous data from capacitance-voltage measurements. Based on previous reports of carbon effect on the bandgap of compressively strained Si1−x−yGexCy, our work suggests that the effect of carbon incorporation on the band alignment of Si1−x−yGexCy/Si is to reduce the valence band offset, with a negligible effect on the conduction band alignment.

Characterization of the valence band offset in p-Si/Si1−xGex/Si by space charge spectroscopy

1994 ◽  
Vol 37 (4-6) ◽  
pp. 945-948 ◽  
Author(s):  
K. Schmalz ◽  
H. Rücker ◽  
I.N. Yassievich ◽  
H.G. Grimmeiss ◽  
B. Dietrich ◽  
...  
Keyword(s):  
Space Charge ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement
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