Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation

1998 ◽  
Vol 532 ◽  
Author(s):  
Kentaro Shibahara ◽  
Hiroaki Furumoto ◽  
Kazuhiko Egusa ◽  
Meishoku Koh ◽  
Shin Yokoyama
Keyword(s):  
Solid Phase ◽  
Early Stage ◽  
Low Energy ◽  
Resistance Increase ◽  
Junction Formation ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Two Stages ◽  
Dopant Loss ◽  
Sims Depth Profile

ABSTRACTWe have investigated the origins of sheet resistance increase in ultra shallow junctions formed by low energy As or Sb implantation. The increase is mainly attributed to dopant loss during annealing due to pileup of dopant at Si02/Si interface. This problem is common to As and Sb and will become more significant as the implantation energies are decreased. We found that the pileup can be classified into two stages from the time dependence of Sb SIMS depth profile .In the early stage of annealing the pileup is very fast and is probably related to the transport of the dopants due to solid phase epitaxial growth of an amorphized layer formed by the implantation. In the later stage the pileup is much slower and is considered to be governed by dopant diffusion.

Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon

2013 ◽  
Vol 854 ◽  
pp. 141-145
Author(s):  
V.G. Litovchenko ◽  
B. Romanyuk ◽  
O. Oberemok ◽  
V. Popov ◽  
V. Melnik ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Furnace Annealing ◽  
Marker Layer ◽  
Silicon Bulk ◽  
Junction Formation ◽  
Shallow Junctions ◽  
O Isotope ◽  
Ultra Shallow Junctions ◽  
Effect Of Oxygen

Ultra-shallow junctions (USJs) were formed by low-energy As ion implantation with the subsequent furnace annealing. It was found that the significant amount of oxygen is redistributed from the silicon bulk to the arsenic-implanted region. We present the effect of oxygen gettering at the creation of arsenic-doped USJs using the marker layer created by ion implantation of 18O isotope.

Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth

2004 ◽  
Vol 22 (1) ◽  
pp. 306 ◽  
Author(s):  
R. Lindsay ◽  
K. Henson ◽  
W. Vandervorst ◽  
K. Maex ◽  
B. J. Pawlak ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

2005 ◽  
Vol 124-125 ◽  
pp. 409-414 ◽  
Author(s):  
F. Boucard ◽  
F. Roger ◽  
I. Chakarov ◽  
V. Zhuk ◽  
M. Temkin ◽  
...  
Keyword(s):  
Low Energy ◽  
High Dose ◽  
Diffusion Annealing ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion

2007 ◽  
Vol 134 ◽  
pp. 129-131 ◽  
Author(s):  
Mike S. Ameen ◽  
Aseem K. Srivastava ◽  
Ivan L. Berry
Keyword(s):  
Chemical Processes ◽  
Near Surface ◽  
Shallow Junction ◽  
Highly Sensitive ◽  
Shallow Junctions ◽  
Wet Chemical ◽  
The Creation ◽  
Ultra Shallow Junctions ◽  
Dopant Loss ◽  
Surface Proximity

We have investigated the use of Rs and SIMS measurements to quantify substrate erosion due to plasma ashing and subsequent wet cleaning in the creation of ultra-shallow junctions. The near-surface proximity of the implants makes them highly sensitive to various plasma and wet chemical processes. We also observed a dependency on the implant species, dose and energy that can be correlated to substrate damage incurred during implant.

Rapid Thermal Process Requirements for The Annealing of Ultra-Shallow Junctions

1997 ◽  
Vol 470 ◽  
Author(s):  
Daniel F. Downey ◽  
Sonu L. Daryanani ◽  
Marylou Meloni ◽  
Kristen M. Brown ◽  
Susan B. Felch ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Diffusion Mechanism ◽  
Complex Surface ◽  
Junction Depth ◽  
Enhanced Diffusion ◽  
Shallow Junctions ◽  
Diffusion Mechanisms ◽  
Ultra Shallow Junctions ◽  
Dopant Loss ◽  
Loss Mechanisms

ABSTRACT2. 0 keV 11B+, 2.2 keV 49BF2+ ion implanted and 1.0 kV Plasma Doped (PLAD) wafers of a dose of 1E15/cm2 were annealed at various times and temperatures in a variety of ambiente: 600 to 50,000 ppm O2 in N2; 5% NH3 in N2; N2O; N2 or Ar, in order to investigate the effects of the annealing ambient on the formation of ultra-shallow junctions. RGA data was collected during some (if the anneals to assist in identifying the complex surface chemistry responsible for boron out-diffusion. Subsequent to the anneals, ellipsometric, XPS, four-point probe sheet resistance and SJJVIS measurements were performed to further elucidate the effects of the different ambients on the r etained boron dose, the sheet resistance value, the RTP grown oxide layer and the junction depth. In the cases where oxygen was present, e.g. N2O and O2 in N2, an oxidation enhanced diffusion of the boron was observed. This was most dramatic for the N2O anneals, which at 1050°C 10s diffused the boron an additional 283 to 427 Å, depending on the particular doping condition and species. For the case of BF2 implants and PLAD, anneals in 5% NH3 in N2 reduced the junction depth by a nitridation reduced diffusion mechanism. RGA data indicated that the out-diffusion mechanisms for B and BF2 implanted wafers are different, with the BF2 exhibiting dopant loss mechanisms during the 950°C anneals, producing F containing compounds. B implants did not show doping loss mechanisms, ais observed by the RGA, until the 1050°C anneals and these signals did not contain F containing compounds. Equivalent effective energy boron implants of 8.9 keV BF2 vs. 2.0 keV B, however, indicated that the overall effect of the F in the BF2 implants is very beneficial in the creation of ultra-shallow junctions (compared to B implants): reducing the junction depth by 428 Å, and increasing the electrical activation (determined by SRP) by 11.7%, even though the retained dose (resulting from an increased out-diffusion of B), was decreased by 5.4%.

Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants

1997 ◽  
Vol 308-309 ◽  
pp. 562-569 ◽  
Author(s):  
Daniel F Downey ◽  
Carlton M Osburn ◽  
James J Cummings ◽  
Sonu Daryanani ◽  
Scott W Falk
Keyword(s):  
Dose Rate ◽  
Low Energy ◽  
Dose Rate Effects ◽  
Rate Effects ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Modeling and Simulation of the Influence of SOI Structure on Damage Evolution and Ultra-shallow Junction Formed by Ge Preamorphization Implants and Solid Phase Epitaxial Regrowth

2006 ◽  
Vol 912 ◽  
Author(s):  
Caroline Mok ◽  
B. Colombeau ◽  
M. Jaraiz ◽  
P. Castrillo ◽  
J. E. Rubio ◽  
...  
Keyword(s):  
Damage Evolution ◽  
Solid Phase ◽  
Kinetic Monte Carlo ◽  
Silicon On Insulator ◽  
Bulk Silicon ◽  
Shallow Junction ◽  
Defect Interaction ◽  
Epitaxial Regrowth ◽  
Junction Formation ◽  
Ultra Shallow Junctions

AbstractPreamorphization implant (PAI) prior to dopant implantation, followed by solid phase epitaxial regrowth (SPER) is of great interest due to its ability to form highly-activated ultra-shallow junctions. Coupled with growing interest in the use of silicon-on-insulator (SOI) wafers, modeling and simulating the influence of SOI structure on damage evolution and ultra-shallow junction formation is required. In this work, we use a kinetic Monte Carlo (kMC) simulator to model the different mechanisms involved in the process of ultra-shallow junction formation, including amorphization, recrystallization, defect interaction and evolution, as well as dopant-defect interaction in both bulk silicon and SOI. Simulation results of dopant concentration profiles and dopant activation are in good agreement with experimental data and can provide important insight for optimizing the process in bulk silicon and SOI.

Ultra Shallow Junction Formation by RTA at High Temperature for Short Heating Cycle Time

1998 ◽  
Vol 532 ◽  
Author(s):  
S. Saito ◽  
S. Shishiguchi ◽  
A. Mineji ◽  
T. Matsuda
Keyword(s):  
Beam Current ◽  
Process Conditions ◽  
Key Factors ◽  
Enhanced Diffusion ◽  
Junction Formation ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Ion Species ◽  
Temperature Time ◽  
Short Heating

ABSTRACTIn accordance with decrease of device size, ultra shallow junctions are required for realizing superior device performance. Enhanced diffusion caused by implantation is a crucial factor to realize ultra shallow junctions. Not only implant but also RTA conditions are key factors to suppress enhanced diffusion. In this paper, process conditions to minimize enhanced diffusion are discussed. Implant ion species, energy, dose and beam current parameters are investigated for implantation and temperature, time and ramping rate parameters are investigated for RTA. Important result is that optimization of not only implant but also RTA conditions should be carried out in order to fabricate ultra shallow junctions.

scholarly journals Simulation Of Ultra Shallow Junction Formation For Nano Devices Applications By Dopant Diffusion From Spin On Glasses

2012 ◽  
Author(s):  
Nik Hazura N. Hamat ◽  
Uda Hashim ◽  
Ibrahim Ahmad
Keyword(s):  
Sheet Resistance ◽  
High Performance ◽  
High Surface ◽  
Deep Submicron ◽  
Short Channel ◽  
Shallow Junction ◽  
Si Substrates ◽  
Junction Formation ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Bagi merealisasikan MOSFET submikron, simpangan cetek ultra berkerintangan rendah diperlukan bagi menghalang kesan saluran pendek dan bagi meningkatkan peranti. Dalam kajian ini, pembentukan simpangan cetek ultra disimulasikan menggunakan perisian ATHENA dan Silvaco Inc. bagi memodelkan resapan dari SOD ke dalam silikon. Simpangan ultra P+N berkualiti tinggi dengan kedalaman 40 nm telah dibentuk menggunakan ciri–ciri yang baik dengan arus bocor serendah 0.5 na/cm2. Simpangan cetek kurang daripada turut diperoleh tetapi kualiti simpangan–simpangan cetek ini kurang baik disebabkan oleh arus bocor permukaan yang tinggi. Pembentukan simpangan dari resapan lapisan polisilikon di atas silikon diikuti oleh SOD di atasnya menghasilkan simpangan yang lebih cetek yang berkerintangan rendah. Kata kunci: Simpangan cetek ultra, resapan, SOD, ATHENA, MOSFET For realizing deep submicron MOSFETs, ultra shallow junctions with low sheet resistance and high doping concentrations are required to suppress short channel effects and to increase the performance. In this paper, ultra shallow junctions were simulated using ATHENA software package from Silvaco TCAD Tools to model the diffusion from spin on dopant (SOD) into silicon. High performance 40 nm P+N shallow junction fabricated by rapid thermal diffusion of B150 into silicon have been obtained. The junction showed very good characteristics with leakage currents as low as 0.5 nA/cm2. Shallow junctions less than 20 nm have also been obtained but the quality was not very good due to very high surface leakage current. Junction formation by diffusion of polysilicon layer on Si substrates then SOD layer deposition on top of it produced shallower junctions with low sheet resistance. Key words: Ultra shallow junction, MOSFET, ULSI, diffusion, spin on dopant, ATHENA, ATLAS

Performance Characteristics of 65nm PFETs Using Molecular Implant Species for Source and Drain Extensions

2008 ◽  
Vol 1070 ◽  
Author(s):  
Chung Foong Tan ◽  
L. W. Teo ◽  
C-S. Yin ◽  
J. G. Lee ◽  
J. Liu ◽  
...  
Keyword(s):  
Molecular Species ◽  
Perfect Match ◽  
Atomic Mass ◽  
Low Energy ◽  
Performance Characteristics ◽  
Electrical Measurements ◽  
External Resistance ◽  
Profile Matching ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

ABSTRACTWe investigated the performance of 65nm pFETs whereby the source and drain extensions (SDE) were implanted with Carborane, (C2B10H12) a novel form of molecular species. The high atomic mass of this molecule (146 a.m.u.) and the number of boron atoms transported per ion enables the productivity at low energy required for manufacturing of ultra shallow junctions for advanced scaling. In this investigation, Carborane was implanted at 13 keV to produce a Boron profile near equivalent to that produced by the reference BF2 implant. Results of electrical measurements did not exhibit any compromise in the I-V characteristics in terms of Id-Vg and Id-Vd and Ion-Ioff. External resistance and Vt roll-off shifted slightly with respect to the reference devices. This is attributed to a deeper junction with Carborane due to slight offset in the profile matching. It will be shown that with fully matched profiles, a perfect match of the device characteristics can be achieved.

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