Performance Characteristics of 65nm PFETs Using Molecular Implant Species for Source and Drain Extensions

2008 ◽  
Vol 1070 ◽  
Author(s):  
Chung Foong Tan ◽  
L. W. Teo ◽  
C-S. Yin ◽  
J. G. Lee ◽  
J. Liu ◽  
...  
Keyword(s):  
Molecular Species ◽  
Perfect Match ◽  
Atomic Mass ◽  
Low Energy ◽  
Performance Characteristics ◽  
Electrical Measurements ◽  
External Resistance ◽  
Profile Matching ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

ABSTRACTWe investigated the performance of 65nm pFETs whereby the source and drain extensions (SDE) were implanted with Carborane, (C2B10H12) a novel form of molecular species. The high atomic mass of this molecule (146 a.m.u.) and the number of boron atoms transported per ion enables the productivity at low energy required for manufacturing of ultra shallow junctions for advanced scaling. In this investigation, Carborane was implanted at 13 keV to produce a Boron profile near equivalent to that produced by the reference BF2 implant. Results of electrical measurements did not exhibit any compromise in the I-V characteristics in terms of Id-Vg and Id-Vd and Ion-Ioff. External resistance and Vt roll-off shifted slightly with respect to the reference devices. This is attributed to a deeper junction with Carborane due to slight offset in the profile matching. It will be shown that with fully matched profiles, a perfect match of the device characteristics can be achieved.

A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

2005 ◽  
Vol 124-125 ◽  
pp. 409-414 ◽  
Author(s):  
F. Boucard ◽  
F. Roger ◽  
I. Chakarov ◽  
V. Zhuk ◽  
M. Temkin ◽  
...  
Keyword(s):  
Low Energy ◽  
High Dose ◽  
Diffusion Annealing ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants

1997 ◽  
Vol 308-309 ◽  
pp. 562-569 ◽  
Author(s):  
Daniel F Downey ◽  
Carlton M Osburn ◽  
James J Cummings ◽  
Sonu Daryanani ◽  
Scott W Falk
Keyword(s):  
Dose Rate ◽  
Low Energy ◽  
Dose Rate Effects ◽  
Rate Effects ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants

1998 ◽  
Vol 27 (12) ◽  
pp. 1291-1295 ◽  
Author(s):  
Steven Marcus ◽  
Wilfried Lerch ◽  
Daniel F. Downey ◽  
Stanislov Todorov ◽  
Judy Chow
Keyword(s):  
Low Energy ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon

2013 ◽  
Vol 854 ◽  
pp. 141-145
Author(s):  
V.G. Litovchenko ◽  
B. Romanyuk ◽  
O. Oberemok ◽  
V. Popov ◽  
V. Melnik ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Furnace Annealing ◽  
Marker Layer ◽  
Silicon Bulk ◽  
Junction Formation ◽  
Shallow Junctions ◽  
O Isotope ◽  
Ultra Shallow Junctions ◽  
Effect Of Oxygen

Ultra-shallow junctions (USJs) were formed by low-energy As ion implantation with the subsequent furnace annealing. It was found that the significant amount of oxygen is redistributed from the silicon bulk to the arsenic-implanted region. We present the effect of oxygen gettering at the creation of arsenic-doped USJs using the marker layer created by ion implantation of 18O isotope.

Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation

1998 ◽  
Vol 532 ◽  
Author(s):  
Kentaro Shibahara ◽  
Hiroaki Furumoto ◽  
Kazuhiko Egusa ◽  
Meishoku Koh ◽  
Shin Yokoyama
Keyword(s):  
Solid Phase ◽  
Early Stage ◽  
Low Energy ◽  
Resistance Increase ◽  
Junction Formation ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Two Stages ◽  
Dopant Loss ◽  
Sims Depth Profile

ABSTRACTWe have investigated the origins of sheet resistance increase in ultra shallow junctions formed by low energy As or Sb implantation. The increase is mainly attributed to dopant loss during annealing due to pileup of dopant at Si02/Si interface. This problem is common to As and Sb and will become more significant as the implantation energies are decreased. We found that the pileup can be classified into two stages from the time dependence of Sb SIMS depth profile .In the early stage of annealing the pileup is very fast and is probably related to the transport of the dopants due to solid phase epitaxial growth of an amorphized layer formed by the implantation. In the later stage the pileup is much slower and is considered to be governed by dopant diffusion.

Formation of Ultra-Shallow Junctions by Advanced Plasma Doping Techniques

2011 ◽  
Author(s):  
G. D. Papasouliotis ◽  
L. Godet ◽  
V. Singh ◽  
R. Miura ◽  
H. Ito ◽  
...  
Keyword(s):  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth

2004 ◽  
Vol 22 (1) ◽  
pp. 306 ◽  
Author(s):  
R. Lindsay ◽  
K. Henson ◽  
W. Vandervorst ◽  
K. Maex ◽  
B. J. Pawlak ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Photoluminescence Characterization of Defects in Rapidly Annealed Ultra Shallow Junctions

2013 ◽  
Vol 2 (5) ◽  
pp. P195-P204 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Masashi Okutani ◽  
Gota Murai ◽  
Shuji Tagawa ◽  
Hiroki Saikusa ◽  
...  
Keyword(s):  
Shallow Junctions ◽  
Ultra Shallow Junctions
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