Minority Carrier Lifetime Studies in Halogen Lamp Recrystallized Soi Films

1985 ◽  
Vol 53 ◽  
Author(s):  
A. Chantre ◽  
D. Ronzani ◽  
D. P. Vu

ABSTRACTWe report a detailed investigation of minority carrier generation processes in halogen lamp recrystallized SOI films. Various kinds of materials have been analyzed in order to assess the roles of the different crystallographic imperfections present in the layers (precipitates, subgrain boundaries, interfaces). We conclude that generation lifetimes inprecipitate-free material are controlled by subgrain boundaries, and show that 100 μs lifetimes can be measured in defect-free regions of SOI obtained using a defect localization technique.

1998 ◽  
Vol 510 ◽  
Author(s):  
Bhushan Sopori ◽  
Wei Chen ◽  
N. M. Ravindra

AbstractMulticrystalline Si (mc-Si) wafers, used for the commercial solar cell fabrication, have spatial nonuniformities in the material properties that cause strong variations in the minority carrier lifetime, τ. We present the results of two-dimensional modeling to show carrier generation, recombination and transport in such a material. These results are used to infer measurement conditions that can yield meaningful spatially weighted average value of τ.


2013 ◽  
Author(s):  
Linda Höglund ◽  
David Z. Ting ◽  
Arezou Khoshakhlagh ◽  
Alexander Soibel ◽  
Cory J. Hill ◽  
...  

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  

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