Minority Carrier Lifetime Studies in Halogen Lamp Recrystallized Soi Films
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ABSTRACTWe report a detailed investigation of minority carrier generation processes in halogen lamp recrystallized SOI films. Various kinds of materials have been analyzed in order to assess the roles of the different crystallographic imperfections present in the layers (precipitates, subgrain boundaries, interfaces). We conclude that generation lifetimes inprecipitate-free material are controlled by subgrain boundaries, and show that 100 μs lifetimes can be measured in defect-free regions of SOI obtained using a defect localization technique.
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2002 ◽
Vol 17
(6)
◽
pp. 503-509
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