Si-MBE SOI

1985 ◽  
Vol 53 ◽  
Author(s):  
T.L. Lin ◽  
S.C. Chen ◽  
K.L. Wang ◽  
S. Iyer
Keyword(s):  
Porous Silicon ◽  
Molecular Beam ◽  
Silicon On Insulator ◽  
Etch Pit Density ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Etch Pit ◽  
Beam Method ◽  
Step Growth ◽  
Van Der Pauw

ABSTRACT100 μm-wide silicon-on-insulator (SOI) structures have been accomplished by utilizing silicon molecular beam epitaxial (Si-MBE) growth on porous silicon anid subsequent lateral-enhanced oxidation of porous silicon through pattern widows. A silicon beam method was used for insitu cleaning of Si surface at 750°C, and the effectiveness of this method was demonstrated by Auger electron spectroscopy and checked by the etch-pit density of the grown film. A two-step growth process of Si MBE was used to grow epitaxial layers of high quality. An electron mobility of 1300 cm2V-1s-1 was obtained by van der Pauw measurements.

scholarly journals Beating in the RHEED Intensity Oscillations during Surfactant Mediated GaAs Molecular Beam Epitaxy: Process Physics and Modeling

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 405-408
Author(s):  
Vamsee K. Pamula ◽  
R. Venkat
Keyword(s):  
Molecular Beam ◽  
Flux Ratio ◽  
High Energy ◽  
Equation Model ◽  
High Energy Electron ◽  
Fixed Temperature ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Monolayer Coverage ◽  
Period Of Oscillation

In a recent work, beating in the reflection high energy electron diffraction (RHEED) intensity oscillations were observed during molecular beam epitaxial (MBE) growth of GaAs with Sn as a surfactant. The strength of beating is found to be dependent on the Sn submonolayer coverage with strong beating observed for 0.4 monolayer coverage. For a fixed temperature and flux ratio (Ga to As), the period of oscillation decreases with increasing Sn coverage. In this work, we have developed a rate equation model of growth to investigate this phenomenon. In our model, the GaAs covered by the Sn is assumed to grow at a faster rate compared to the GaAs not covered by Sn. Assuming that the electron beams reflected from the Sn covered surface and the rest of the surface are incoherent, the results of the dependence of the RHEED oscillations on Sn submonolayer coverages for various Sn coverages were obtained and compared with experimental data and the agreement is good.

MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
R. Venkatasubramanian ◽  
P. R. Sharps ◽  
M. L. Timmons ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Lattice Mismatch ◽  
Antiphase Domain ◽  
Multilayer Structures ◽  
Si Substrate ◽  
Mbe Growth ◽  
Etch Pit ◽  
Layer Structures ◽  
Domain Boundaries

ABSTRACTInvestigation has continued into the use of SixGe1−x multilayer structures (MLS) as a buffer layer between a Si substrate and a GaAs epitaxial layer in order to accommodate the 4.1% lattice mismatch. SixGe1−x 4-layer and 5-layer structures terminating in pure Ge have been grown using molecular beam epitaxy. Subsequent GaAs heteroepitaxy has allowed evaluation of these various GaAs/SixGe1−xMLS/Si (100) structures. Antiphase domain boundaries have been eliminated using vicinal Si (100) substrates tilted 6° off-axis toward [011], and the etch pit density in GaAs grown on a 5-layer SixGe1−x MLS on vicinal Si (lOO) was measured to be 106 cm−2.

Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
S. Fukatsu ◽  
K. Fujita ◽  
H. Yaguchi ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Lower Limit ◽  
Molecular Beam ◽  
Growth Direction ◽  
High Concentration ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

Mbe Growth and Characterization of GaAs thin Films on SiGe Buffer Layers

1988 ◽  
Vol 116 ◽  
Author(s):  
S.M. Prokes ◽  
W.F. Tseng ◽  
B.R. Wilkins ◽  
H. Dietrich ◽  
A. Christou
Keyword(s):  
Electron Microscopy ◽  
Growth Process ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Defect Production ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Step Growth ◽  
Scanning Electron

AbstractEpitaxial SiGe buffers have been formed by the implantation of 74Ge+ ions into Si(100)4° to <011> substrates. The implants were made at 150keV to a dose of 1×1017 /cm2 . The epitaxial layers were characterized by Rutherford backscattering, Raman spectroscopy, and electroreflectance and were found to be 300Å thick having on average a composition of Si0 . 35 Ge0.65. GaAs layers were then grown on these substrates by molecular beam epitaxy, using the standard two-step growth process. The results from Auger, Scanning Electron Microscopy, and Cross-sectional TEM indicate a lower defect production and propagation in these samples, compared to those grown directly on Si.

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

High Tc YBa2Cu3O7−x Thin Films on GaAs-Based Substrate Using MgO Buffer Layers with Sb Passivation Technique 1

1992 ◽  
Vol 275 ◽  
Author(s):  
M. Z. Tseng ◽  
W. N. Jiang ◽  
E. L. Hu ◽  
U. K. Mishra
Keyword(s):  
Molecular Beam ◽  
Full Width Half Maximum ◽  
Ybco Film ◽  
Buffer Layers ◽  
Mbe Growth ◽  
High Tc ◽  
Rocking Curve ◽  
Molecular Beam Epitaxial ◽  
Wet Chemical

ABSTRACTHigh quality YBCO films have been grown on GaAs-based substrates via depositing MgO epitaxial buffer layers prior to YBCO growth. The critical temperature of the best YBCO film, Tc(0) was 87K and Jc>6.7×104 A/cm2 at 77K. The MgO buffer layers are usually [100] oriented along the normal of GaAs (100) substrates with full-width-half-maximum (FWHM) of rocking curve varying from 1–3 degree. We found that the uniformity and quality of MgO buffer layers are very sensitive to the pre-deposition preparation of GaAs-based substrates. Nonuniform MgO buffer layers are often obtained on those substrates prepared by wet chemical processing. Reproducible, controlled formation of the MgO buffer layer was achieved using an antimony passivation scheme, after molecular beam epitaxial (MBE) growth of the desired structure of the substrate.

MBE Growth of GaAs on Porous Silicon

1987 ◽  
Vol 91 ◽  
Author(s):  
T. L. Lin ◽  
L. Sadwick ◽  
K. L. Wang ◽  
S. S. Rhee ◽  
Y. C Kao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Porous Silicon ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Rutherford Backscattering ◽  
Mbe Growth ◽  
Transmission Electron ◽  
Minimum Yield

ABSTRACTGaAs layers have been grown on porous silicon (PS) substrates by molecular beam epitaxyNo surface morphology deterioration was observed onGaAs-on-PS layers in spite of the roughness of PS. A 10% Rutherford backscattering spectroscopy (RBS) channeling minimum yield for GaAs-on-PS layers as compared to 16% for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy (TEM) reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers.

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