The Origin of Mis-Oriented Diamond Grains Nucleated Directly on (001) Silicon Surface

1998 ◽  
Vol 529 ◽  
Author(s):  
R.Q. Zhang ◽  
W.J. Zhang ◽  
C. Sun ◽  
X. Jiang ◽  
S.-T. Lee
Keyword(s):  
Grain Orientation ◽  
Silicon Surface ◽  
Diamond Films ◽  
Orientation Distribution ◽  
Interface Structure ◽  
Silicon Surfaces ◽  
Diamond Growth ◽  
Diamond Nucleation ◽  
Interfacial Structures ◽  
Zero Degree

AbstractThe origin of mis-oriented diamond grains frequently observed in heteroepitaxial diamond films on (001) silicon surfaces was studied. By statistically analyzing the in-plane rotation angles of diamond grains in scanning electron microscopy observations, it was found that the distribution of the grain orientation is not random and two satellite distribution peaks at about 20° and 30° accompany the main distribution peak at zero degree referenced to the <110> direction of substrate. The interface structure corresponding to the main distribution peak at zero degree of oriented diamond growth has been proposed in our previous studies. In this study, our molecular orbital PM3 simulation of a step-by-step diamond nucleation further reveals two other metastable diamond/silicon interfacial structures. The orientations of the corresponding diamond grains are parallel to the (001) silicon surface but with in-plane rotations of 20° and 30° respectively with respect to the <110> direction. We relate these two mis-oriented growths to the two satellite peaks of grain orientation distribution. Based on this study, the possibility in experiment to reduce the formation of mis-oriented configurations and to obtain a perfectly oriented diamond growth is discussed.

Diamond growth on carbide surfaces using a selective etching technique

1994 ◽  
Vol 9 (8) ◽  
pp. 2154-2163 ◽  
Author(s):  
K.J. Grannen ◽  
R.P.H. Chang
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Nucleation And Growth ◽  
Diamond Growth ◽  
Etching Technique ◽  
Diamond Nucleation ◽  
Nucleation And Growth Mechanism

Microwave plasma-enhanced chemical vapor deposition of diamond films on silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pretreatment is necessary to grow these films with a (100) faceted surface morphology. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves etching of the noncarbon component of the carbide by atomic fluorine to expose surface carbon atoms and diamond nucleation and growth on these exposed carbon atoms. Hydrogen is necessary in the growth process to limit the rapid etching of the carbide substrates by corrosive fluorine atoms.

Nucleation and Growth of Oriented Diamond Films on Nickel Substrates

1996 ◽  
Vol 423 ◽  
Author(s):  
P. C. Yang ◽  
W. Liu ◽  
D. A. Tucker ◽  
C. A. Wolden ◽  
R. F. Davis ◽  
...  
Keyword(s):  
Surface Layer ◽  
Diamond Films ◽  
Diamond Growth ◽  
Eutectic Melting ◽  
Diamond Nucleation ◽  
Proposed Model ◽  
Nickel Substrates ◽  
Surface Reflectivity ◽  
Oriented Single Crystal

Abstract(100) and (111) oriented diamond films were grown on similarly oriented single crystal Ni substrates using a multi-step seeding and growth process.In-situreflection monitoring revealed large surface reflectivity changes upon heating of the seeded substrate in H2. The reflectivity change was attributed to the surface melting and dissolution of the seeding particles. The presence of atomic hydrogen lowered the eutectic melting point of the Ni-C compound from 1325°C to about 1100°C. It appeared that the molten Ni-C-H surface layer suppressed graphite formation, which is normally observed in diamond growth on Ni, and promoted diamond nucleation. The oriented diamond films were also obtained using non-diamond carbon seeding. Based on experimental observation, a proposed model is described to explain the nucleation mechanism from the molten Ni-C-H surface layer.

Kinetic Monte Carlo Simulation of Diamond Film Growth with the Inclusion of Surface Migration

1998 ◽  
Vol 527 ◽  
Author(s):  
Armando Netto ◽  
Michael Frenklach
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Diamond Films ◽  
State Theory ◽  
Diamond Surface ◽  
Diamond Growth ◽  
Gaseous Species ◽  
Surface Migration

ABSTRACTDiamond films are of interest in many practical applications but the technology of producing high-quality, low-cost diamond is still lacking. To reach this goal, it is necessary to understand the mechanism underlying diamond deposition. Most reaction models advanced thus far do not consider surface diffusion, but recent theoretical results, founded on quantum-mechanical calculations and localized kinetic analysis, highlight the critical role that surface migration may play in growth of diamond films. In this paper we report a three-dimensional time-dependent Monte Carlo simulations of diamond growth which consider adsorption, desorption, lattice incorporation, and surface migration. The reaction mechanism includes seven gas-surface, four surface migration, and two surface-only reaction steps. The reaction probabilities are founded on the results of quantum-chemical and transition-state-theory calculations. The kinetic Monte Carlo simulations show that, starting with an ideal {100}-(2×1) reconstructed diamond surface, the model is able to produce a continuous film growth. The smoothness of the growing film and the developing morphology are shown to be influenced by rate parameter values and by deposition conditions such as temperature and gaseous species concentrations.

An Integral Heat Sink for Cooling Microelectronic Components

1993 ◽  
Vol 115 (3) ◽  
pp. 284-291 ◽  
Author(s):  
S. H. Bhavnani ◽  
C.-P. Tsai ◽  
R. C. Jaeger ◽  
D. L. Eison
Keyword(s):  
Heat Sink ◽  
Silicon Surface ◽  
Numerical Study ◽  
High Heat ◽  
Heat Fluxes ◽  
Silicon Surfaces ◽  
Source Surface ◽  
Mouth Size ◽  
Severe Constraint ◽  
Boiling Incipience

Liquid immersion cooling is rapidly becoming the mechanism of choice for the newest generation of supercomputers. Miniaturization at both the chip and module level places a severe constraint on the size of the heat sink employed to dissipate the high heat fluxes generated. A study was conducted to develop a surface that could augment boiling heat transfer from silicon surfaces under these constraints. The surface created consists of reversed pyramidal features etched directly on to the silicon surface. Experiments were conducted in a saturated pool of refrigerant-113 at atmospheric pressure. The inexpensive crystallographic etching techniques used to create the enhanced features are described in the paper. The main characteristics of interest in the present study were the incipient boiling superheat and the magnitude of the temperature overshoot at boiling incipience. Results were obtained for test sections with various cavity densities, and compared with data for the smooth untreated surface. It was found that incipient boiling superheat was reduced from a range of 27.0–53.0° C for the untreated silicon surface, to a range of 2.5–15.0° C for the enhanced surfaces. The overshoot also decreased considerably; from about 12.0–18.0° C for two classes of untreated surfaces, to a range of 1.5–5.3° C for the enhanced surfaces. The values of the incipient boiling superheat, and those of the overshoot decreased with a decrease in cavity mouth size. Two ratios of heat source surface area to the area of the enhanced surface were studied. The overshoot values obtained for these surfaces were compared with those observed for some commonly used enhanced surfaces. An elementary numerical study was conducted to estimate the magnitude of heat spreading.

Unitary Micro-Patterning Structure-Induced Hydrophobic Silicon Surface

2011 ◽  
Vol 239-242 ◽  
pp. 2524-2527
Author(s):  
Si Si Liu ◽  
Chao Hui Zhang ◽  
Han Bing Zhang
Keyword(s):  
Inductively Coupled Plasma ◽  
Silicon Surface ◽  
Scale Effects ◽  
Silicon Surfaces ◽  
Functional Surface ◽  
Inductively Coupled ◽  
Cassie State ◽  
Micro Patterning ◽  
Pillar Arrays ◽  
The Relationship

The relationship between the wettability and the roughness structure on silicon surface is studied. The unitary microscale square pillar arrays are fabricated by the way of inductively coupled plasma (ICP). The wettability of water droplets on the silicon surface is changed from hydrophilic to hydrophobic only by introducing microscale pillarlike structure. Furthermore, the scale effects of the unitary rough structure on hydrophobicity are investigated. For those silicon surfaces with a fixed pillar height, the relatively larger scale of grooves leads the droplets wettability state to unstable Cassie state and the contact angle will initially get larger and then decrease with the increase of groove width. The research could provide further insights into the design of functional surface with controllable roughness-induced hydrophobic.

Micro- and Nanotextured Silicon for Antireflective Coatings of Solar Cells

2016 ◽  
Vol 39 ◽  
pp. 89-95 ◽  
Author(s):  
Anatoly Druzhinin ◽  
Valery Yerokhov ◽  
Stepan Nichkalo ◽  
Yevhen Berezhanskyi
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Silicon Substrate ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Silicon Surfaces ◽  
Antireflective Coatings ◽  
High Conversion Efficiency ◽  
Industrial Use

The paper deals with obtaining of textured silicon surfaces by chemical etching. As a result of experiments based on the modification and optimization of obtaining a textured silicon, several methods of chemical texturing of the crystalline silicon surface were developed. It was shown that modified isotropic and anisotropic etching methods are applicable to create a microrelief on the surface of silicon substrate. These methods in addition to their high conversion efficiency can be used for both mono- and multicrystalline silicon which would ensure their industrial use.

scholarly journals The Transformation from (111) to (100): A Routine to Large-Scale Epitaxial Diamond

2020 ◽  
Author(s):  
Yang Wang ◽  
Weihua Wang ◽  
Shilin Yang ◽  
Jiaqi Zhu
Keyword(s):  
Large Scale ◽  
Diamond Films ◽  
Diamond Growth ◽  
Nucleation Density ◽  
Diamond Synthesis ◽  
First Principle ◽  
High Quality ◽  
First Principle Calculations ◽  
Large Size ◽  
Experimental Researches

Diamond is a material with excellent performances which attracts the attention from researchers for decades. Pt (111), owing to its catalytic activity on diamond synthesis, is regarded to be a candidate for diamond hetero-epitaxity, which can enhance nucleation density. Molten surface at diamond growth temperature can also improve mobility and aggregation capability of primitive nuclei. Generally, (100)-oriented is welcomed for the achivement of high quality and large size diamond, since the formation of defects and twins are prevented. First-principle calculations and experimental researches were carried out for the study of transformation of orientation. The transformation from {111} to {100}-oriented diamond has been observed on Pt (111) substrate, which can be promoted by the increase of carbon source concentration and substrate temperature. The process is energetic favorable, which may provides a way towards large-scale (100) diamond films.

Effect of Grain Orientation Distribution on Anisotropy of Idealized Granular Materials

2012 ◽  
Vol 174-177 ◽  
pp. 24-29
Author(s):  
Bo Zhou ◽  
Ji Wei Li ◽  
Peng Shuai
Keyword(s):  
Granular Materials ◽  
Grain Orientation ◽  
Volumetric Strain ◽  
Friction Angle ◽  
Orientation Distribution ◽  
Biaxial Compression ◽  
Shape Effect ◽  
Vertical Loading ◽  
Horizontal Loading ◽  
Long Rod

Abstract. The regular grain orientation of granular materials is a common phenomenon in nature. Based on the research of grain shape effect on mechanical property of granular materials, two kinds of idealized shape grain (kind of long rod and square) assemblies with different grain orientation were studied by simulated biaxial compression test using Discrete Element Method. The significant orientation which can be computed as the mean value of all grain orientation is introduced to represent the orientation regularity of granular materials. In order to study the anisotropy, the mobilized friction angle and volumetric strain of assemblies with different significant orientation were obtained under both vertical and horizontal loading. The results show that the regular orientation of grains influences the movement such as motion and rotation obviously; with the increasing of significant orientation, peak mobilized friction angle of long rod grain assembly gradually increases under horizontal loading, and decreasing under vertical loading.

Oxygen Effect in Diamond Deposition at Low Temperatures

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Liou ◽  
A. Inspektor ◽  
R. Weimer ◽  
D. Knight ◽  
R. Messier
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gas Mixtures ◽  
Diamond Growth ◽  
Oxygen Effect ◽  
Gas Mixture ◽  
Diamond Thin Films ◽  
Deposited Films

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).

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