Nucleation and Growth of Oriented Diamond Films on Nickel Substrates

1996 ◽  
Vol 423 ◽  
Author(s):  
P. C. Yang ◽  
W. Liu ◽  
D. A. Tucker ◽  
C. A. Wolden ◽  
R. F. Davis ◽  
...  
Keyword(s):  
Surface Layer ◽  
Diamond Films ◽  
Diamond Growth ◽  
Eutectic Melting ◽  
Diamond Nucleation ◽  
Proposed Model ◽  
Nickel Substrates ◽  
Surface Reflectivity ◽  
Oriented Single Crystal

Abstract(100) and (111) oriented diamond films were grown on similarly oriented single crystal Ni substrates using a multi-step seeding and growth process.In-situreflection monitoring revealed large surface reflectivity changes upon heating of the seeded substrate in H2. The reflectivity change was attributed to the surface melting and dissolution of the seeding particles. The presence of atomic hydrogen lowered the eutectic melting point of the Ni-C compound from 1325°C to about 1100°C. It appeared that the molten Ni-C-H surface layer suppressed graphite formation, which is normally observed in diamond growth on Ni, and promoted diamond nucleation. The oriented diamond films were also obtained using non-diamond carbon seeding. Based on experimental observation, a proposed model is described to explain the nucleation mechanism from the molten Ni-C-H surface layer.

Diamond nucleation on nickel substrates seeded with non-diamond carbon

1994 ◽  
Vol 9 (5) ◽  
pp. 1063-1066 ◽  
Author(s):  
P.C. Yang ◽  
W. Zhu ◽  
J.T. Glass
Keyword(s):  
Single Crystal ◽  
High Temperatures ◽  
Atomic Hydrogen ◽  
Diamond Films ◽  
Nucleation Mechanism ◽  
Diamond Nucleation ◽  
Carbon Species ◽  
Nickel Substrates

Oriented diamond films have been nucleated on single crystal nickel substrates seeded with non-diamond carbon and annealed at high temperatures in atomic hydrogen. The non-diamond carbon seeds included graphite powders, fullerene (60) powders, and gaseous carbon species. It was found that these different non-diamond carbon powders or species were effective in the enhancement of oriented nucleation of diamond. The morphologies of diamond films were similar regardless of the types of carbon used, suggesting a common nucleation mechanism involved. Based on the experimental observations, a revised model was developed for the oriented nucleation of diamond on Ni.

The Origin of Mis-Oriented Diamond Grains Nucleated Directly on (001) Silicon Surface

1998 ◽  
Vol 529 ◽  
Author(s):  
R.Q. Zhang ◽  
W.J. Zhang ◽  
C. Sun ◽  
X. Jiang ◽  
S.-T. Lee
Keyword(s):  
Grain Orientation ◽  
Silicon Surface ◽  
Diamond Films ◽  
Orientation Distribution ◽  
Interface Structure ◽  
Silicon Surfaces ◽  
Diamond Growth ◽  
Diamond Nucleation ◽  
Interfacial Structures ◽  
Zero Degree

AbstractThe origin of mis-oriented diamond grains frequently observed in heteroepitaxial diamond films on (001) silicon surfaces was studied. By statistically analyzing the in-plane rotation angles of diamond grains in scanning electron microscopy observations, it was found that the distribution of the grain orientation is not random and two satellite distribution peaks at about 20° and 30° accompany the main distribution peak at zero degree referenced to the <110> direction of substrate. The interface structure corresponding to the main distribution peak at zero degree of oriented diamond growth has been proposed in our previous studies. In this study, our molecular orbital PM3 simulation of a step-by-step diamond nucleation further reveals two other metastable diamond/silicon interfacial structures. The orientations of the corresponding diamond grains are parallel to the (001) silicon surface but with in-plane rotations of 20° and 30° respectively with respect to the <110> direction. We relate these two mis-oriented growths to the two satellite peaks of grain orientation distribution. Based on this study, the possibility in experiment to reduce the formation of mis-oriented configurations and to obtain a perfectly oriented diamond growth is discussed.

Diamond growth on carbide surfaces using a selective etching technique

1994 ◽  
Vol 9 (8) ◽  
pp. 2154-2163 ◽  
Author(s):  
K.J. Grannen ◽  
R.P.H. Chang
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Nucleation And Growth ◽  
Diamond Growth ◽  
Etching Technique ◽  
Diamond Nucleation ◽  
Nucleation And Growth Mechanism

Microwave plasma-enhanced chemical vapor deposition of diamond films on silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pretreatment is necessary to grow these films with a (100) faceted surface morphology. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves etching of the noncarbon component of the carbide by atomic fluorine to expose surface carbon atoms and diamond nucleation and growth on these exposed carbon atoms. Hydrogen is necessary in the growth process to limit the rapid etching of the carbide substrates by corrosive fluorine atoms.

Heteroepitaxial Nucleation of Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
B. R. Stoner ◽  
P. J. Ellis ◽  
M. T. Mcclure ◽  
S. D. Wolter
Keyword(s):  
Single Crystal ◽  
Electronic Transport ◽  
Diamond Films ◽  
Heteroepitaxial Growth ◽  
Large Area ◽  
Diamond Nucleation ◽  
Single Crystal Diamond ◽  
Single Crystal Films ◽  
Crystal Films

ABSTRACTThe heteroepitaxial nucleation and eventual growth of large area single crystal diamond films has long eluded researchers interested in tapping it's many enabling properties, specifically in the field of active electronics. The uncertainty surrounding the diamond nucleation mechanism(s) and corresponding inability to carefully control this process are often blamed for the difficulty in achieving true heteroepitaxial growth. Biasenhanced nucleation (BEN) has been shown to provide in-situ control of the nucleation process. Subsequent advancements in both nucleation and deposition stages has resulted in highly oriented diamond films, approaching single crystal quality yet still plagued by arrays of medium to low angle grain boundaries that can degrade the electronic transport properties. To further improve upon these results and achieve large area, single crystal films it is believed that development must focus on the more fundamental problems of diamond nucleation. This paper presents a review of recent progress pertaining to the bias-enhanced process and focuses on data specific to the epitaxial nucleation dilemma.

Effect of Oxygen on the Textured Diamond Growth over Nickel Substrates

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Ramesham ◽  
M. F. Rose ◽  
R. F. Askew ◽  
M. Bozack
Keyword(s):  
Etch Rate ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Diamond Growth ◽  
Entire Surface ◽  
Raman Analysis ◽  
Nickel Substrates ◽  
Effect Of Oxygen ◽  
Deposited Films

ABSTRACTMicrowave plasma has been used to grow diamond films using CH4 and H2 over nickel substrates. Nucleation of the diamond has been achieved by manual scratching and ultrasonic agitation of the substrates. The substrate was left in the H 2 microwave plasma to remove any oxide film present prior to the diamond growth. According to SEM the morphology of the grown films was (100) textured over the entire surface. Our interest is to study the effect of O2 on the growth rate and the morphology of as-deposited diamond films. Infact, O2 has a tendency to preferentially etch the diamond (etch rate: 111 > 110 >100). Injection of O2 into the reaction mixture could enhance the 100 texture further. Raman analysis confirms the deposited films as diamond. Effect of O2 on the nature of the films and the characterization of as-deposited films is described.

Nucleation of oriented diamond films on nickel substrates

1993 ◽  
Vol 8 (8) ◽  
pp. 1773-1776 ◽  
Author(s):  
P.C. Yang ◽  
W. Zhu ◽  
J.T. Glass
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Diamond Surface ◽  
High Quality ◽  
Ni Substrate ◽  
Nickel Substrates ◽  
Hot Filament ◽  
Oriented Single Crystal

A seeding and multistep deposition process has been developed to nucleate and grow diamond films directly on Ni substrates in a hot filament chemical vapor deposition system. High quality diamond films have been deposited without graphite codeposition on both 〈100〉 oriented single-crystal Ni and polycrystalline Ni substrates. Both 〈100〉 and 〈111〉 oriented diamond nuclei have been observed depending upon the underlying substrate orientations. Molten metallic phases were found surrounding the diamond nuclei, and it is speculated that a liquid layer composed of nickel, carbon, and hydrogen also formed on the diamond surface during the growth. The oriented diamond is believed to have been achieved by the reorientation of seeded diamond particles into alignment with the Ni substrate due to interaction between the diamond and Ni lattices.

Kinetic Monte Carlo Simulation of Diamond Film Growth with the Inclusion of Surface Migration

1998 ◽  
Vol 527 ◽  
Author(s):  
Armando Netto ◽  
Michael Frenklach
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Diamond Films ◽  
State Theory ◽  
Diamond Surface ◽  
Diamond Growth ◽  
Gaseous Species ◽  
Surface Migration

ABSTRACTDiamond films are of interest in many practical applications but the technology of producing high-quality, low-cost diamond is still lacking. To reach this goal, it is necessary to understand the mechanism underlying diamond deposition. Most reaction models advanced thus far do not consider surface diffusion, but recent theoretical results, founded on quantum-mechanical calculations and localized kinetic analysis, highlight the critical role that surface migration may play in growth of diamond films. In this paper we report a three-dimensional time-dependent Monte Carlo simulations of diamond growth which consider adsorption, desorption, lattice incorporation, and surface migration. The reaction mechanism includes seven gas-surface, four surface migration, and two surface-only reaction steps. The reaction probabilities are founded on the results of quantum-chemical and transition-state-theory calculations. The kinetic Monte Carlo simulations show that, starting with an ideal {100}-(2×1) reconstructed diamond surface, the model is able to produce a continuous film growth. The smoothness of the growing film and the developing morphology are shown to be influenced by rate parameter values and by deposition conditions such as temperature and gaseous species concentrations.

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