Out Diffusion of Oxygen in Czochralski Silicon at Low Temperatures

1998 ◽  
Vol 527 ◽  
Author(s):  
S.A. McQuaid ◽  
B.K. Johnson ◽  
D. Gambaro ◽  
R. Falster ◽  
M. Ashwin ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Conversion Rate ◽  
Catalytic Mechanism ◽  
Diffusion Rate ◽  
Hydrogen Plasma ◽  
Surface Concentration ◽  
Czochralski Silicon ◽  
Simultaneous Loss ◽  
Diffusion Profiles ◽  
Oxygen Atoms

ABSTRACTPreviously reported measurements of anomalously high rates of oxygen out-diffusion in Czochralski silicon at low temperatures (T≤450°C) are confirmed. The surface concentration is shown to decrease with increasing time while the depth to which the concentration is depleted remains constant. Exposure to a hydrogen plasma under conditions known to catalyse the diffusion of isolated oxygen atoms causes an increased rate of decrease of the surface concentration without significantly affecting the depth to which the concentration is depleted. The evolution of the out-diffusion profiles cannot be explained by a catalytic mechanism operating on the isolated oxygen atoms. A slow conversion of Oi to a complex containing oxygen which can diffuse rapidly over long distances before being trapped either on the surface or in the bulk of the sample can account for both out-diffusion and simultaneous loss of [Oi] in the bulk. The conversion rate is enhanced by exposure to a hydrogen plasma, indicating that it is controlled by the diffusion rate of isolated atoms.

The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures

1999 ◽  
Vol 86 (4) ◽  
pp. 1878-1887 ◽  
Author(s):  
S. A. McQuaid ◽  
B. K. Johnson ◽  
D. Gambaro ◽  
R. Falster ◽  
M. J. Ashwin ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Czochralski Silicon ◽  
Oxygen Atoms

Understanding Reactivity at Very Low Temperatures: The Reactions of Oxygen Atoms with Alkenes

Science ◽  
2007 ◽  
Vol 317 (5834) ◽  
pp. 102-105 ◽  
Author(s):  
H. Sabbah ◽  
L. Biennier ◽  
I. R. Sims ◽  
Y. Georgievskii ◽  
S. J. Klippenstein ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Oxygen Atoms

Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments

2003 ◽  
Vol 788 ◽  
Author(s):  
R. Job ◽  
Y. Ma ◽  
A. G. Ulyashin
Keyword(s):  
Hydrogen Plasma ◽  
Structural Defects ◽  
Process Conditions ◽  
Force Microscopy ◽  
Czochralski Silicon ◽  
Atomic Force ◽  
Nano Structures ◽  
Plasma Treatments ◽  
The Impact ◽  
Wafer Surfaces

ABSTRACTHydrogen plasma treatments applied on standard Czochralski silicon (Cz Si) wafers cause a structuring of the surface regions on the sub-100 nm scale, i.e. a thin ‘nano-structured’ Si layer is created up to a depth of ∼ 150 nm. The formation of the ‘nano-structures’ and their evolution in dependence on the process conditions was studied. The impact of post-hydrogenation annealing on the morphology of the structural defects was studied up to 1200 °C. The H-plasma treated and annealed samples were analyzed at surface and sub-surface regions by scanning electron microscopy (SEM), atomic force microscopy (AFM), and μ-Raman spectroscopy.

Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 57-58 ◽  
pp. 189-196 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
Yu.A. Bumay ◽  
Reinhart Job ◽  
G. Grabosch ◽  
D. Borchert ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrogen Plasma ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

GaAs Epitaxial Growth by ECR-MBE

1991 ◽  
Vol 223 ◽  
Author(s):  
Naoto Kondo ◽  
Yasushi Nanishi ◽  
Tomohiro Shibata ◽  
Norio Yamamoto ◽  
Masatomo Fujimoto
Keyword(s):  
Low Temperatures ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Selective Area Growth ◽  
Desorption Process ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth ◽  
A New Technique

ABSTRACTElectron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) is a new technique for GaAs growth. This paper describes surface cleaning of GaAs and Si substrates at fairly low temperatures using hydrogen plasma, low temperature growth of GaAs on both substrates, and selective area growth of GaAs on both substrates partially covered with a silicon nitride (SiN) mask. The ability to clean and grow at low temperatures-assumed to be a benefit of using energetic particles—should permit us to grow layers on processed GaAs and/or Si substrates. The electrical properties of grown layers are also described. Selective area growth has been successfully carried out with no deposit on the mask or irregular growth at the mask edge. The desorption process introduced by impinging ions is found to play an important role in the selective area growth.

A study of chromium-exchanged zeolites as potential catalysts for thermolysis of water

1986 ◽  
Vol 64 (7) ◽  
pp. 1332-1339 ◽  
Author(s):  
K. M. Miedzinska ◽  
B. R. Hollebone
Keyword(s):  
Low Temperatures ◽  
Metal Ion ◽  
Redox Cycle ◽  
Zeolite 13X ◽  
Irreversible Reduction ◽  
Very High ◽  
Oxygen Atoms

Evidence was found that the Cr(III)/Cr(II) redox cycle previously described to occur upon dehydration and rehydration of exchanged zeolite 13X, does not occur reversibly. Data suggest dimerization of the metal ion at high levels of exchange. The bridging provideu by the oxygen atoms of the lattice probably stabilize these dimers and lead to initial but irreversible reduction at very low temperatures. Evidence also indicates irreversible formation of new lattices at very high dehydration temperatures.

µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 91-96 ◽  
Author(s):  
Wolfgang Düngen ◽  
Reinhart Job ◽  
Yue Ma ◽  
Yue Long Huang ◽  
Wolfgang R. Fahrner ◽  
...  
Keyword(s):  
Hydrogen Bonds ◽  
Molecular Hydrogen ◽  
Thermal Evolution ◽  
Hydrogen Plasma ◽  
Vibrational Modes ◽  
Czochralski Silicon ◽  
Hydrogen Implantation ◽  
Local Vibrational Modes ◽  
Plasma Hydrogenation

µ-Raman measurements were carried out on hydrogen implanted, plasma hydrogenated and subsequently annealed Cz Silicon samples, respectively. In comparison to as-implanted or asplasma treated samples, in consideration of the thermal evolution, the effects of the implanted and subsequently plasma treated samples were analyzed. An enhanced trapping of molecular hydrogen in multivacancies has been observed after hydrogen implantation and subsequent plasma hydrogenation. In comparison to as-implanted samples, the intensity of the local vibrational modes (LVM) of vacancy-hydrogen complexes and silicon-hydrogen bonds are increasing.

A Steady-State Model for Coupled Defect Impurity Diffusion in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
F. F. Morehead ◽  
R. F. Lever
Keyword(s):  
Steady State ◽  
High Surface ◽  
Local Equilibrium ◽  
Surface Concentration ◽  
Extended Model ◽  
High Concentration ◽  
Steady State Model ◽  
High Surface Concentration ◽  
Phosphorus In Silicon ◽  
Diffusion Profiles

AbstractWe extend our earlier model which was proposed to explain tails in the diffusion profiles of high concentration boron and phosphorus in silicon. Our quasi-steady-state approach is generalized here to include both vacancies (V) and interstitials (I) at equivalent levels. I-V recombination is regarded as near local equilibrium, occurring through reactions of the defects with defect-impurity pairs. This approach leads to the well-known plateau, kink and tail in high surface concentration P diffusions in Si and to the less well recognized tails in B as well. Our extended model, in its simplest form, allows a more complete and less restrictive treatment of Au diffusion in Si. An important advantage is the direct inclusion of these defect-impurity interactions and the resulting gradients in the defect concentrations.

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