Laser Ablated Buffer Layers for YBCO-Tape Conductors

1998 ◽  
Vol 526 ◽  
Author(s):  
B. Holzapfel ◽  
V. Betz ◽  
M.A. Arranz ◽  
N. Reger ◽  
L. Schultz
Keyword(s):  
Room Temperature ◽  
Boundary Diffusion ◽  
Ion Beam ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
Deposition Parameters ◽  
Oriented Parallel ◽  
Ybco Tape ◽  
Deposition Conditions

AbstractBiaxially oriented yttria stabilized zirconia (YSZ) and Pr6O11 buffer layers were grown at room temperature by Ion-Beam Assisted Laser Deposition (IBALD) on metal substrates. Dependent on deposition parameters, IBALD grown films showed in-plane orientations of about 10° FWHM (full-width at half maximum) for both systems. In contrast to the YSZ system, where best in plane alignment is found for a [111] direction oriented parallel to the ion beam, the Pr6O11 system shows best in-plane alignment at nearly gracing incidence of the ion beam. An additional thin intermediate CeO2 layer improves the heteroepitaxial growth of YBCO on highly biaxially oriented YSZ films. Pulsed Laser Deposition (PLD) was also used to grow epitaxial CeO2 buffer layers directly on biaxially textured Ni-tapes. SIMS investigations showed an interdiffusion zone of about 0.5μm at standard deposition conditions, but no enhanced grain boundary diffusion could be observed.

Epitaxy of Ni on Si(111) by Ion Beam Assisted Deposition

1990 ◽  
Vol 187 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant
Keyword(s):  
Room Temperature ◽  
Epitaxial Film ◽  
Ion Beam ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Ion Energies ◽  
Deposition Conditions

AbstractEpitaxial growth of Ni (111) on Si (111) has previously been obtained at room temperature by 25-keV-Ni ion beam assisted deposition, where both ion and vapor fluxes were incident at 45° to the specimen normal. This work explores the effect of a wider range of deposition conditions on epitaxial film quality. Nominally 300-nm-thick films were deposited at room temperature on Si (111) and other substrates. The substrates were sputter cleaned by the Ni ion beam immediately prior to deposition. Ion energies of 25 to 175 keV, relative ion to vapor fluxes R from 0 to 0.1, and vapor deposition rates of 0.05 to 0.5 nm/s were examined. Bragg-Brentano symmetric x-ray diffraction evaluated film quality while Ni (220) grazing-incidence x-ray diffraction rocking curves verified film epitaxy. Film quality changed gradually over these deposition parameters, with an optimum at 25 keV and an R of about 0.01. At higher energies and R values sputtering and radiation damage destroyed the film epitaxy

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Development of conducting buffer architectures using cube textured IBAD-TiN layers

2008 ◽  
Vol 1150 ◽  
Author(s):  
Ruben Hühne ◽  
Konrad Güth ◽  
Martin Kidszun ◽  
Rainer Kaltofen ◽  
Vladimir Matias ◽  
...  
Keyword(s):  
Ion Beam ◽  
Pulsed Laser ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Tin Films ◽  
Ion Beam Assisted Deposition ◽  
Conductive Oxide ◽  
Ybco Coated Conductors ◽  
Seed Layers

AbstractIon-beam assisted deposition (IBAD) offers the possibility to prepare thin textured films on amorphous or non-textured substrates. In particular, the textured nucleation of TiN is promising for the development of a conducting buffer layer architecture for YBCO coated conductors based on the IBAD approach. Accordingly, cube textured IBAD-TiN layers have been deposited reactively using pulsed laser deposition on Si/Si3N4 substrates as well as on polished Hastelloy tapes using different amorphous seed layers. Metallic buffer layers such as Au, Pt or Ir were grown epitaxially on top of the TiN layer showing texture values similar to the IBAD layer. Smooth layers were obtained using a double layer of Au/Pt or Au/Ir. Biaxially textured YBCO layers were achieved using SrRuO3 or Nb-doped SrTiO3 as a conductive oxide cap layer. Finally, different amorphous conducting seed layers were applied for the IBAD-TiN process. Highly textured TiN films were achieved on amorphous Ta0.75Ni0.25 layers showing a similar in-plane orientation of about 8° as on standard seed layers.

Carbon Nitride Thin Films Grown by Pulsed Laser Deposition

1993 ◽  
Vol 327 ◽  
Author(s):  
Randolph E. Treece ◽  
James S. Horwitz ◽  
Douglas B. Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Deposition Parameters ◽  
Wide Range ◽  
Gas Atmosphere

AbstractThin films of diamond and diamond-like carbon (DLC) are technologically important materials that serve as hard, scratch resistant and chemically inert coatings for tools and optics. Recent calculations suggest that β-C3N4 should be harder than diamond. We have deposited carbon nitride (CNx) thin films by pulsed laser deposition. The films were grown from a graphite target in a nitrogen background. The nitrogen source was either (a) a N2 gas atmosphere, or (b) a N2+/N+ ion beam generated by a Kaufman ion gun. A wide range of deposition parameters were investigated, such as deposition pressure (0.3-900 mTorr N2), substrate temperature (50 and 600°C), and laser fluence (1-4 J/cm2) and laser repetition rate (1-10 Hz). The films have been characterized by Rutherford Backscattering Spectroscopy, thin-film X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. In general, the films were nitrogen deficient with a maximum nitrogen to carbon ratio (N/C) of 0.45 and a shift in the G band Raman peak consistent with amorphous CNx (a-CNx).

Pulsed Laser Deposition of Poly(Tetrafluoroethylene) Films

1995 ◽  
Vol 397 ◽  
Author(s):  
D.L. Kjendal ◽  
Ashok Kumar ◽  
R.B. Inturi ◽  
J. A. Barnard
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Nano Indentation ◽  
Corning Glass ◽  
Deposition Parameters ◽  
Compositional Properties

ABSTRACTThin films of poly(tetrafluoroethylene) have been deposited on amorphous (7059 Corning Glass) and silicon(l00) substrates at various temperatures by the Pulsed Laser Deposition technique. The deposition was carried out at high vacuum (˜10-6 torr)at temperatures ranging from room temperature to 350°C. The mechanical properties of these films at the varying process temperatures have been evaluated by nano-indentation techniques and compositional properties of the films have been characterized by Fourier Transform Infrared spectroscopy. The deposition parameters have been optimized in order to produce good quality films.

Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Film Growth ◽  
Texture Evolution ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Buffer Layers ◽  
Ito Thin Films

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.

Deposition of Tungsten Boride by Ion Beam Sputtering

1990 ◽  
Vol 181 ◽  
Author(s):  
F. Meyer ◽  
D. Bouchier ◽  
V. Stambouli ◽  
G. Gautherin
Keyword(s):  
Substrate Temperature ◽  
Diffusion Barrier ◽  
Room Temperature ◽  
Bulk Material ◽  
Ion Beam ◽  
Schottky Diodes ◽  
Thick Layer ◽  
Intrinsic Stress ◽  
Tungsten Boride ◽  
Deposition Conditions

ABSTRACTRefractory metal compounds, such as nitrides or borides, are attractive candidates for diffusion barrier between silicon and aluminium in VLSI technology. We studied tungsten boride films deposited on silicon (100) by ion beam sputter deposition (IBSD).The tungsten boride films were prepared by sputtering a W2B5 target by argon ions with energy ranging from 0.5 to 2keV. The substrate temperature was varied from room temperature to 630°C. Finally, the films were patterned by selective wet etching in order to characterize the resulting Schottky diodes. We observed that a boron loss occurs during deposition, probably due to the backscattering of sputtered boron on previously deposited W atoms. By in situ AES analysis, we verified that a 5 nm thick layer acts as a diffusion barrier for silicon up to about 630°C, for all deposition conditions. The films properties were found to depend weakly on the primary ion energy and on the substrate temperature. All the films have resistivity at room temperature in the range of about 250 µΩ cm. The measured density, in the range of 12 g/cm3, is very close to that of WB2 bulk material, while the intrinsic stress of the films remains compressive and in the range of -lGPa. This value is notably lower than what we measured for pure tungsten prepared under similar deposition conditions.

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