Facet Free Selective Silicon Epitaxy by Rapid Thermal Chemical Vapor Deposition

1998 ◽  
Vol 525 ◽  
Author(s):  
Katherine E. Violette ◽  
Rick Wise ◽  
Chih-Ping Chao ◽  
Sreenath Unnikrishnan
Keyword(s):  
Growth Rate ◽  
Deposition Rate ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Selective Epitaxy ◽  
Silicon Epitaxy ◽  
Surface Mobility ◽  
Polysilicon Gate ◽  
Initial Stage

ABSTRACTA facet-free, selective epitaxy process has been identified using the SiH2CI2 /HCI/H2 chemistry in a commercially available, single-wafer epitaxy reactor. The pre-epitaxy bake required a minimum of 900°C in order to obtain a clean silicon surface with reasonable throughput while preserving the integrity of the shallow trench isolation structures. The epitaxy growth rate ranged from as low as 130Å/rnin at 825°C, 10 torr to as high as 1500 Å/min at 875°C and 70 torr while the deposition rate of polysilicon on polysilicon differed significantly: at 10 torr, the epitaxy growth rate is greater by as much as 50%, and at 70 torr the polysilicon deposition rate is greater by as much as 40%. The facet suppression depended heavily on two things: the undercut beneath the polysilicon gate sidewall insulator and the process pressure. The undercut is believed to be responsible for suppressing the initial stage of facet formation, most probably by completely eliminating lateral overgrowth of the crystal. The process conditions then enable continued facet suppression perhaps by restricting the silicon surface mobility. The sidewall structure and process conditions combine to make a reliably facet-free selective epitaxy process

Substrate Dependence of Microcrystalline Silicon Growth with SiH4 Diluted by Ar

2014 ◽  
Vol 936 ◽  
pp. 264-268
Author(s):  
Hua Cheng ◽  
Yong Chan Qian ◽  
Jun Xue
Keyword(s):  
Deposition Rate ◽  
Electron Cyclotron Resonance ◽  
Substrate Surface ◽  
Gaseous Mixture ◽  
Film Surface ◽  
Chemical Vapor ◽  
Preferred Orientation ◽  
Initial Stage ◽  
Substrate Dependence ◽  
Si Films

Microcrystalline Si films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using Ar diluted SiH4gaseous mixture. The effects of the substrate on deposition rate, preferred orientation and roughness of the films were investigated. The results show that, the influence of the substrate surface chemical nature on the deposition rate is significant in the initial stage of the growth. And considering the crystallinity and roughness of the films, the substrate is favored in its preferred orientation with a rougher surface. Based on these results, it is confirmed that the combination of diffusion and etching is indispensable to describe the deposition of μc-Si with SiH4diluted by Ar, and the mechanism of μc-Si growth could be controlled by diffusion of Si and etching of the Ar+on the film surface.

scholarly journals Study on β-Ga2O3 Films Grown with Various VI/III Ratios by MOCVD

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 281 ◽  
Author(s):  
Zeming Li ◽  
Teng Jiao ◽  
Daqiang Hu ◽  
Yuanjie Lv ◽  
Wancheng Li ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Nucleation Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crystalline Quality ◽  
Organic Chemical ◽  
Initial Stage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

β-Ga2O3 films were grown on sapphire (0001) substrates with various O/Ga (VI/III) ratios by metal organic chemical vapor deposition. The effects of VI/III ratio on growth rate, structural, morphological, and Raman properties of the films were systematically studied. By varying the VI/III ratio, the crystalline quality obviously changed. By decreasing the VI/III ratio from 66.9 × 103 to 11.2 × 103, the crystalline quality improved gradually, which was attributed to low nuclei density in the initial stage. However, crystalline quality degraded with further decrease of the VI/III ratio, which was attributed to excessive nucleation rate.

Low Temperature Selective Silicon Epitaxy Using Si2H6, H2 and Cl2 in Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition

1995 ◽  
Vol 387 ◽  
Author(s):  
Katherine E. Violette ◽  
Mehmet C. Öztürk ◽  
Patricia A. O'Neill ◽  
Kim Christensen ◽  
Dennis M. Maher
Keyword(s):  
Growth Rate ◽  
Flow Rate ◽  
High Vacuum ◽  
Chemical Vapor ◽  
High Growth ◽  
Ultra High Vacuum ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Epitaxy ◽  
Low Pressures ◽  
Wafer Manufacturing

In this paper we present for the first time the use of the Si2H6/H2/Cl2 chemistry for selective silicon epitaxy in a rapid thermal CVD reactor. Depositions were carried out in an ultra-high vacuum rapid thermal chemical vapor deposition (UHV-RTCVD) system designed and constructed at North Carolina State University. Experiments were performed over a temperature range of 650°C to 850°C and over a pressure range of 22 to 25 mTorr using a flow rate 100 sccm of 10% Si2H6 in H2 and 0 to 10 sccm of Cl2. Deposited layer thicknesses were evaluated using a combination of interferometry and profilometry. Without Cl2 over the range of 650°C to 850°C, the growth rate is approximately constant at 160 nm/min. exhibiting a weak dependence on temperature. A clear advantage of Si2H6 is that high growth rates compatible with single wafer manufacturing can be obtained at very low pressures thus minimizing the introduction of contaminants by the process gases. With the addition of C12, the growth rate is suppressed at temperatures below 800°C, but, at 800°C and above, it is affected only slightly for Cl2 flow rates below 5 sccm. As the Cl2 flow rate is increased past 5 sccm, the growth rate at higher temperatures becomes a strong function of Si2H6:Cl2 ratio. Excellent selectivity with respect to patterned SiO2 and Si3N4 was obtained over the entire Cl2 flow rate range suggesting that even lower Cl levels may be sufficient for selective deposition. This implies that selectivity can be obtained with Si:Cl ratios much lower than those introduced by the more commonly used SiH2Cl2 chemistry. Furthermore, because Si2H6 can provide high growth rates at very low pressures, the total partial pressures of Cl2 and resulting chlorinated species can be significantly lower than typically required for selectivity. Our results indicate that C12 successfully enhances selectivity and yields highly selective depositions for process durations well within the practical limits of single wafer manufacturing.

Preparation of Strontium Bismuth Tantalate Thin Film by Liquid-Delivery Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 830 ◽  
Author(s):  
M. Silinskas ◽  
M. Lisker ◽  
B. Kalkofen ◽  
S. Matichyn ◽  
B. Garke ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Bismuth Oxide ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Pressure ◽  
Metalorganic Chemical

ABSTRACTThin films of BiOX, SrXTaYO, and SrXBiYTaZO (SBT) were deposited by liquid-delivery metalorganic chemical vapor deposition (MOCVD). The substrate temperature and the deposition pressure were varied from 300 to 600°C and from 0.35 to 7 mbar, respectively. Triallylbismuth (Bi-1), triphenylbismuth (Bi-2) or alkyl bismuth (Bi-3) and strontium bis-pentaethoxy-methoxyethoxy tantalate (Sr-Ta) were used as Bi precursors and as Sr-Ta precursor, respectively. X-ray photoelectron spectroscopy (XPS), ellipsometry, and scanning electron microscopy (SEM) were carried out to characterize the film properties.The growth rates of the MOCVD of BiOX and SrXTaYO were compared to the growth rate of SBT to obtain information about mutual interaction between the precursors. The growth rate of bismuth oxide thin films deposited from Bi-1 and Bi-2 was low (∼10 nm/h at 0.35 mbar). The growth rate of strontium tantalate films was higher (up to 50 nm/h) and depended strongly on the temperature. Eight times higher (∼400 nm/h) growth rates of BiOX and SBT films were observed for the Bi-3 precursor. The deposition rate of the SBT films was quite similar to the rate of the bismuth oxide. However, the deposition rate of SBT was always lower than the deposition rate of the single Bi precursors. The growth rate significantly depended on the deposition pressure. A decrease of the deposition pressure in the reactor chamber reduced the deposition rate of BiOX, SrXTaYO, and SBT, but on the other hand, it improved the uniformity of the film thickness over the entire 150 mm wafer surface.The XPS measurements showed a deficit of bismuth in the SBT films even though the concentration of the Bi-1 or Bi-2 precursor was several times higher compared to the Sr-Ta precursor. This problem disappeared when Bi-3 source was used.

Rheed Observations of Silicon (100) Surface Reconstruction after Remote Hydrogen Plasma Cleaning

1989 ◽  
Vol 146 ◽  
Author(s):  
T. Hsu ◽  
L. Breaux ◽  
B. Anthony ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Low Temperature ◽  
Surface Reconstruction ◽  
Silicon Surface ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Third Order ◽  
Silicon Epitaxy ◽  
The Third ◽  
Lower Temperature ◽  
Order Pattern

ABSTRACTLow temperature silicon epitaxy is critical to novel silicon-based devices requiring hyper-abrupt transitions in doping profiles or heterointerfaces. Epitaxy by Remote Plasma-Enhanced Chemical Vapor Deposition (RPCVD) consists of an in situ remote hydrogen plasma clean of the silicon surface followed by growth of silicon from silane at 220° - 400°C. Reconstruction of the silicon (100) surface from a (1×1) to a (2×1) structure after cleaning at 310°C is observed by RHEED, indicating an atomically clean surface. The removal of carbon and oxygen has been further substantiated by Auger Electron Spectroscopy (AES) and growth on these atomically clean substrates has produced good quality epitaxial films. Using remote hydrogen plasma cleans at lower temperature we report the first observation of third-order silicon surface reconstruction on a Si(100) surface, where two faint fractional order streaks between the sharp integral order streaks are observed. After a short (5 minute), low temperature (300-400 °C) anneal the third order pattern transforms rather quickly to a strong (2×1) reconstruction pattern. The third order pattern can then be restored by following the anneal with a repeat of the lower temperature hydrogen clean. Although the origin of the third order pattern is unclear at this time, we believe it is due to a Si-H complex formation at the silicon surface.

Physics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate

2010 ◽  
Vol 107 (5) ◽  
pp. 054906 ◽  
Author(s):  
Ina T. Martin ◽  
Charles W. Teplin ◽  
James R. Doyle ◽  
Howard M. Branz ◽  
Paul Stradins
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Epitaxy

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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