Emissivity Of Coated Silicon At Elevated Temperatures

1998 ◽  
Vol 525 ◽  
Author(s):  
H. Rogne ◽  
H. Ahmed
Keyword(s):  
Optical Constants ◽  
Elevated Temperatures ◽  
Emission Spectra ◽  
Infrared Emission ◽  
Optical Measurements ◽  
Theoretical Modelling ◽  
Film Coatings ◽  
Thin Film Coatings ◽  
Electron Beam Heating

ABSTRACTIsothermal electron beam heating has been combined with in situ optical measurements in order to measure the emissivity of coated silicon samples at elevated temperatures. The coatings include a number of oxide, nitride, and silicon films. Infrared emission spectra were recorded from I to 9 μm for temperatures between 750 and 1200°C. The experimental results were compared with calculated theoretical values, which were predicted from the theory of thin film coatings, using a matrix model incorporating the optical constants for the materials. A good match between experimental and theoretical values validates the use of the infrared optical constants for theoretical modelling related to control and temperature measurements in rapid thermal processing systems.

Infrared Emission Spectra of Indium Phosphide at Elevated Temperatures

1997 ◽  
Vol 502 ◽  
Author(s):  
H. Rogne ◽  
P. J. Timans ◽  
H. Ahmed
Keyword(s):  
Elevated Temperatures ◽  
Semiconductor Device ◽  
Thermal Emission ◽  
Emission Spectra ◽  
Infrared Emission ◽  
Device Fabrication ◽  
Optical Measurements ◽  
Optical Data ◽  
Monitoring And Control ◽  
Process Monitoring And Control

ABSTRACTProcess monitoring and control during semiconductor device fabrication frequently relies on good knowledge of the optical properties of the substrate wafer and the surface coatings. However, these optical data are often unavailable, and as a consequence errors arise in pyrometric temperature measurements, as well as in thermal modelling of heating cycles. In this study, isothermal electron beam heating has been combined with in situ optical measurements to record thermal emission spectra of undoped InP specimens from 347 to 478°C, at wavelengths between I and 9 μm. The absorption coefficient was deduced from the emission spectra and reveals information about the temperature dependence of the infrared absorption mechanisms in InP.

Tensile Stress-Strain Properties of a-C:H (Diamond-Like Carbon) thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
Paul D. Garrett ◽  
Brian K. Daniels
Keyword(s):  
Thin Film ◽  
Tensile Stress ◽  
Rf Plasma ◽  
Diamond Like Carbon ◽  
Stress Strain ◽  
Film Coatings ◽  
Strain Behavior ◽  
Thin Film Coatings ◽  
Mode Of Failure

ABSTRACTFundamental mechanical properties of a-C:H (amorphous or “diamond-like” carbon, DLC) thin film coatings have been investigated. Coatings were deposited by a methane-argon RF plasma on polycarbonate films. Tensile stress-strain behavior of the coated polymer was studied using an extensometer to monitor strain. The differences in moduli between uncoated and coated samples were used to calculate apparent coating moduli, which varied from 1 GPA to 82 GPa. The mode of failure was observed via in-situ optical microscopy during deformation. Intrinsic bond strength of the coating/substrate interface was estimated from crack spacings in the deformed coating.

In-situ Measurement of GaAs Optical Constants and Surface Quality, as Functions of Temperature

1991 ◽  
Vol 222 ◽  
Author(s):  
Huade Yao ◽  
Paul G. Snyder
Keyword(s):  
Room Temperature ◽  
Optical Constants ◽  
Molecular Beam ◽  
Elevated Temperatures ◽  
Native Oxide ◽  
Time Data ◽  
Gaas Sample ◽  
Optical Thermometer ◽  
Surface Changes

ABSTRACTIn-situ spectroscopic ellipsometry (SE) was applied to monitor GaAs (100) surface changes induced at elevated temperatures inside an ultrahigh vacuum (UHV) chamber (<1×10−9 torr base pressure, without As overpressure). The real time data showed clearly the evolution of the native-oxide desorption at ∼577°C, on a molecular-beam-epitaxy (MBE)-grown GaAs (100) surface. In addition, surface degradation was found before and after the oxide desorption. A clean and smooth surface was obtained from an arsenic-capped, MBE-grown GaAs sample, after the arsenic coating was evaporated at ∼350 °C inside the UHV. Pseudodielectric functions <ε>GaAs, from 1.6 eV to 4.5 eV, were obtained through the SE measurements, from this oxide-free surface, at temperatures ranging from room temperature (RT) to ∼610 °C. These <ε> data were used as reference data to develop an algorithm for determining surface temperatures from in-situ SE measurements, thus turning the SE instrument into a sensitive optical thermometer.

Luminescence from Erbium-Doped Gallium Nitride Thin Films

1998 ◽  
Vol 537 ◽  
Author(s):  
J. M. Zavadat ◽  
Myo Thaik ◽  
U. Hòmmerich ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Thin Films ◽  
Elevated Temperatures ◽  
Light Emission ◽  
Thermal Quenching ◽  
Emission Spectra ◽  
Light Emitting Devices ◽  
Recent Developments ◽  
Device Applications ◽  
Er Doped

AbstractThe III-V nitride semiconductors appear to be excellent host materials for optical device applications involving thin films doped with rare earth atoms. In particular, GaN epilayers doped with Er ions have shown a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures. The remarkable thermal stability of the light emission may be due to the large energy bandgap of the material, as well as to the optical inactivity of material defects in the GaN film. In this paper we present recent developments concerning the luminescence characteristics of Er-doped GaN thins films. We have used two methods for doping GaN films with Er ions, ion implantation and in-situ incorporation during gas source metal-organic molecular beam epitaxy (MOMBE). Bandedge (at ∼ 0.34 μm) and infrared (at ∼ 1.54 μm) photoluminescence (PL) spectra have been measured for both types of Er-doped GaN films. Considerably different emission spectra have been observed depending upon the incorporation method and the heat treatment procedure. In situ Er-doped GaN layers have been processed into hybrid light emitting devices and emission spectra at 1.54 Pm have been measured.

scholarly journals Luminescence from Erbium-Doped Gallium Nitride Thin Films

1999 ◽  
Vol 4 (S1) ◽  
pp. 926-932
Author(s):  
J. M. Zavada ◽  
Myo Thaik ◽  
U. Hömmerich ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Thin Films ◽  
Elevated Temperatures ◽  
Light Emission ◽  
Thermal Quenching ◽  
Emission Spectra ◽  
Light Emitting Devices ◽  
Recent Developments ◽  
Device Applications ◽  
Er Doped

The III-V nitride semiconductors appear to be excellent host materials for optical device applications involving thin films doped with rare earth atoms. In particular, GaN epilayers doped with Er ions have shown a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures. The remarkable thermal stability of the light emission may be due to the large energy bandgap of the material, as well as to the optical inactivity of material defects in the GaN film. In this paper we present recent developments concerning the luminescence characteristics of Er-doped GaN thins films. We have used two methods for doping GaN films with Er ions, ion implantation and in-situ incorporation during gas source metal-organic molecular beam epitaxy (MOMBE). Bandedge (at ∼ 0.34 µm) and infrared (at ∼ 1.54 µm) photoluminescence (PL) spectra have been measured for both types of Er-doped GaN films. Considerably different emission spectra have been observed depending upon the incorporation method and the heat treatment procedure. In situ Er-doped GaN layers have been processed into hybrid light emitting devices and emission spectra at 1.54 µm have been measured.

Electron and ion irradiation-induced dissolution of mechanical twins in the intermetalic U3Si: An in situ HVEM study

1989 ◽  
Vol 47 ◽  
pp. 652-653
Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher
Keyword(s):  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
High Energy ◽  
Mechanical Twinning ◽  
In Situ Experiments

The uranium silicides, including U3Si, are under study as candidate low enrichment nuclear fuels. Ion beam simulations of the in-reactor behavior of such materials are performed because a similar damage structure can be produced in hours by energetic heavy ions which requires years in actual reactor tests. This contribution treats one aspect of the microstructural behavior of U3Si under high energy electron irradiation and low dose energetic heavy ion irradiation and is based on in situ experiments, performed at the HVEM-Tandem User Facility at Argonne National Laboratory. This Facility interfaces a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter to a 1.2 MeV AEI high voltage electron microscope, which allows a wide variety of in situ ion beam experiments to be performed with simultaneous irradiation and electron microscopy or diffraction.At elevated temperatures, U3Si exhibits the ordered AuCu3 structure. On cooling below 1058 K, the intermetallic transforms, evidently martensitically, to a body-centered tetragonal structure (alternatively, the structure may be described as face-centered tetragonal, which would be fcc except for a 1 pet tetragonal distortion). Mechanical twinning accompanies the transformation; however, diferences between electron diffraction patterns from twinned and non-twinned martensite plates could not be distinguished.

The threshold energy for atom displacement in fcc metals

1990 ◽  
Vol 48 (4) ◽  
pp. 530-531
Author(s):  
Wilfried Sigle ◽  
Matthias Hohenstein ◽  
Alfred Seeger
Keyword(s):  
Growth Rate ◽  
Elevated Temperatures ◽  
Threshold Energy ◽  
Dislocation Loops ◽  
Absolute Minimum ◽  
Voltage Electron ◽  
Atom Displacement ◽  
Electron Microscopes ◽  
Fcc Metal

Prolonged electron irradiation of metals at elevated temperatures usually leads to the formation of large interstitial-type dislocation loops. The growth rate of the loops is proportional to the total cross-section for atom displacement,which is implicitly connected with the threshold energy for atom displacement, Ed . Thus, by measuring the growth rate as a function of the electron energy and the orientation of the specimen with respect to the electron beam, the anisotropy of Ed can be determined rather precisely. We have performed such experiments in situ in high-voltage electron microscopes on Ag and Au at 473K as a function of the orientation and on Au as a function of temperature at several fixed orientations.Whereas in Ag minima of Ed are found close to <100>,<110>, and <210> (13-18eV), (Fig.1) atom displacement in Au requires least energy along <100>(15-19eV) (Fig.2). Au is thus the first fcc metal in which the absolute minimum of the threshold energy has been established not to lie in or close to the <110> direction.

The Use of Ratio-Recording Interferometry for the Measurement of Infrared Emission Spectra: Applications to Oxide Films on Copper Surfaces

1975 ◽  
Vol 29 (6) ◽  
pp. 496-500 ◽  
Author(s):  
D. Kember ◽  
N. Sheppard
Keyword(s):  
Emission Spectra ◽  
Black Body ◽  
Infrared Emission ◽  
Thin Layers ◽  
Oxide Surface ◽  
Surface Layers ◽  
Selective Reflection ◽  
Copper Surfaces ◽  
Emission And Absorption Spectra ◽  
Direct Correspondence

Infrared emission spectra from metal samples with oxide surface layers are shown to be very advantageously studied using the spectrum-ratioing facility of a recording infrared interferometer. The emission from a given sample is ratioed against that from a black-body emitter at the same temperature so as to give emittance as a function of wavenumber directly. This method has very useful application to irregularly shaped metal emitters. In the absence of selective reflection there is a direct correspondence between emission and absorption spectra for thin layers of an emitting substance. However, the presence of selective reflection leads to reduced emission and to considerable differences in the appearance of “absorption” and emission spectra in regions of strong absorption. Emission spectra obtained from copper plates heated, above 150°C, for different periods in air are shown clearly to indicate the presence of cuprous, Cu(I), and cupric, Cu(II), oxides in the surface layer.

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