Infrared Emission Spectra of Indium Phosphide at Elevated Temperatures

1997 ◽  
Vol 502 ◽  
Author(s):  
H. Rogne ◽  
P. J. Timans ◽  
H. Ahmed
Keyword(s):  
Elevated Temperatures ◽  
Semiconductor Device ◽  
Thermal Emission ◽  
Emission Spectra ◽  
Infrared Emission ◽  
Device Fabrication ◽  
Optical Measurements ◽  
Optical Data ◽  
Monitoring And Control ◽  
Process Monitoring And Control

ABSTRACTProcess monitoring and control during semiconductor device fabrication frequently relies on good knowledge of the optical properties of the substrate wafer and the surface coatings. However, these optical data are often unavailable, and as a consequence errors arise in pyrometric temperature measurements, as well as in thermal modelling of heating cycles. In this study, isothermal electron beam heating has been combined with in situ optical measurements to record thermal emission spectra of undoped InP specimens from 347 to 478°C, at wavelengths between I and 9 μm. The absorption coefficient was deduced from the emission spectra and reveals information about the temperature dependence of the infrared absorption mechanisms in InP.

Emissivity Of Coated Silicon At Elevated Temperatures

1998 ◽  
Vol 525 ◽  
Author(s):  
H. Rogne ◽  
H. Ahmed
Keyword(s):  
Optical Constants ◽  
Elevated Temperatures ◽  
Emission Spectra ◽  
Infrared Emission ◽  
Optical Measurements ◽  
Theoretical Modelling ◽  
Film Coatings ◽  
Thin Film Coatings ◽  
Electron Beam Heating

ABSTRACTIsothermal electron beam heating has been combined with in situ optical measurements in order to measure the emissivity of coated silicon samples at elevated temperatures. The coatings include a number of oxide, nitride, and silicon films. Infrared emission spectra were recorded from I to 9 μm for temperatures between 750 and 1200°C. The experimental results were compared with calculated theoretical values, which were predicted from the theory of thin film coatings, using a matrix model incorporating the optical constants for the materials. A good match between experimental and theoretical values validates the use of the infrared optical constants for theoretical modelling related to control and temperature measurements in rapid thermal processing systems.

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

The Use of Ratio-Recording Interferometry for the Measurement of Infrared Emission Spectra: Applications to Oxide Films on Copper Surfaces

1975 ◽  
Vol 29 (6) ◽  
pp. 496-500 ◽  
Author(s):  
D. Kember ◽  
N. Sheppard
Keyword(s):  
Emission Spectra ◽  
Black Body ◽  
Infrared Emission ◽  
Thin Layers ◽  
Oxide Surface ◽  
Surface Layers ◽  
Selective Reflection ◽  
Copper Surfaces ◽  
Emission And Absorption Spectra ◽  
Direct Correspondence

Infrared emission spectra from metal samples with oxide surface layers are shown to be very advantageously studied using the spectrum-ratioing facility of a recording infrared interferometer. The emission from a given sample is ratioed against that from a black-body emitter at the same temperature so as to give emittance as a function of wavenumber directly. This method has very useful application to irregularly shaped metal emitters. In the absence of selective reflection there is a direct correspondence between emission and absorption spectra for thin layers of an emitting substance. However, the presence of selective reflection leads to reduced emission and to considerable differences in the appearance of “absorption” and emission spectra in regions of strong absorption. Emission spectra obtained from copper plates heated, above 150°C, for different periods in air are shown clearly to indicate the presence of cuprous, Cu(I), and cupric, Cu(II), oxides in the surface layer.

scholarly journals From Black Box to Machine Learning: A Journey through Membrane Process Modelling

Membranes ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 574
Author(s):  
Claudia F. Galinha ◽  
João G. Crespo
Keyword(s):  
Machine Learning ◽  
Process Modelling ◽  
Model Membrane ◽  
Point Of View ◽  
Personal Perspective ◽  
Process Conditions ◽  
Monitoring And Control ◽  
Membrane Processes ◽  
Mechanistic Modelling ◽  
Process Monitoring And Control

Membrane processes are complex systems, often comprising several physicochemical phenomena, as well as biological reactions, depending on the systems studied. Therefore, process modelling is a requirement to simulate (and predict) process and membrane performance, to infer about optimal process conditions, to assess fouling development, and ultimately, for process monitoring and control. Despite the actual dissemination of terms such as Machine Learning, the use of such computational tools to model membrane processes was regarded by many in the past as not useful from a scientific point-of-view, not contributing to the understanding of the phenomena involved. Despite the controversy, in the last 25 years, data driven, non-mechanistic modelling is being applied to describe different membrane processes and in the development of new modelling and monitoring approaches. Thus, this work aims at providing a personal perspective of the use of non-mechanistic modelling in membrane processes, reviewing the evolution supported in our own experience, gained as research group working in the field of membrane processes. Additionally, some guidelines are provided for the application of advanced mathematical tools to model membrane processes.

Irradiation Induced Changes in Semiconducting Thin Films

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Heavy Ions ◽  
Semiconductor Device ◽  
High Energy ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Radiation Environment ◽  
Extended Defects ◽  
Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

Study Progress on Grinding Surface Residual Stresses for Nano-Ceramic Coatings

2013 ◽  
Vol 753-755 ◽  
pp. 277-280 ◽  
Author(s):  
Wei Xiang Liu
Keyword(s):  
Residual Stress ◽  
High Hardness ◽  
Ceramic Materials ◽  
Ceramic Coatings ◽  
Grinding Process ◽  
Monitoring And Control ◽  
Surface Residual Stress ◽  
Surface Residual Stresses ◽  
Process Monitoring And Control ◽  
Grinding Mechanism

Nano-ceramic materials had high hardness and wear resistance. Combined with current technology and cost saving, nanostructured coatings technology were carried out, using HVOF ( high velocity oxygen fuel) or plasma spraying technique can obtain high quality ceramic coating on metal substrate. Ceramic coatings produced cracks in the grinding due to grinding surface residual stress. the coatings grinding surface residual stress of engineering ceramics have been researched, grinding surface residual stress in the nanostructured ceramic coatings are being researched. the researches in this field include grinding process modeling, abrasives and grinding parameters, grinding process monitoring and control and realization of the software, the grinding mechanism and grinding damage on the surface, grinding force prediction, on-line detection, grinding on nanocoating material is a multivariable complex process.

Infrared emission spectra of BeH2 and BeD2

2003 ◽  
Vol 118 (8) ◽  
pp. 3622-3627 ◽  
Author(s):  
A. Shayesteh ◽  
K. Tereszchuk ◽  
P. F. Bernath ◽  
R. Colin
Keyword(s):  
Emission Spectra ◽  
Infrared Emission

Temperature Gradients Through EHD Films and Molecular Alignment Evidenced By Infrared Spectroscopy

1981 ◽  
Vol 103 (1) ◽  
pp. 65-73 ◽  
Author(s):  
V. W. King ◽  
J. L. Lauer
Keyword(s):  
Absorption Spectrum ◽  
Emission Spectra ◽  
Infrared Emission ◽  
Molecular Alignment ◽  
Temperature Gradients ◽  
Spectral Change ◽  
Continuum Source ◽  
Polyphenyl Ether ◽  
Elementary Analysis ◽  
Gap Width

Partial and complete emission band reversals have been observed in the infrared emission spectra from portions of operating sliding contacts. An elementary analysis has been carried out to show that partial reversals are due to temperature gradients in the fluid film—the film acts both as a radiation-emitter and absorber, and that total reversals—an emission spectrum appears as an absorption spectrum—are likely to be due to a continuum source, such as hot solid asperities. The total energy radiated under the latter conditions exceeds that under the others. A decrease in gap width with increased load was accompanied by a dramatic spectral change in the case of 5P4E polyphenyl ether, which is indicative of molecular alignment.

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