Dopant Mapping and Strain Analysis in B Doped Silicon Structures Using Micro-Raman Spectroscopy

1998 ◽  
Vol 518 ◽  
Author(s):  
M. Bowden ◽  
D. J. Gardiner ◽  
M. A. Lourengo ◽  
J. Hedley ◽  
D. Wood ◽  
...  
Keyword(s):  
Lattice Strain ◽  
Boron Concentration ◽  
Strain Analysis ◽  
Peak Frequency ◽  
Raman Shift ◽  
Boron Doped ◽  
Doped Silicon ◽  
Phonon Peak ◽  
Silicon Structures ◽  
Different Sources

AbstractRaman microscopy, using a novel line focus configuration, has been used here to study boron concentration distributions and depth profiles in silicon for two different sources of dopant. Changes in the Raman phonon peak frequency for boron doped silicon have been calibrated against concentration by comparison with SIMS data and a relationship between Raman shift and lattice strain has been obtained.

New insights about boron species in acidic digestion solutions of boron doped silicon

2021 ◽  
Author(s):  
Anja Rietig ◽  
Hans-Joachim Grafe ◽  
Jörg Acker
Keyword(s):  
Boron Concentration ◽  
Systematic Investigation ◽  
Precise Determination ◽  
Boron Doped ◽  
Doped Silicon

The exact and precise determination of the boron concentration in silicon is still a challenge. A systematic investigation dealing with digenstions of 60 silicion samples with HF-HNO3 an subsequent boron...

Extraction of Elastic Parameters of Heavily Boron-Doped Silicon Layer by Elimination of Misfit Dislocations

1995 ◽  
Vol 378 ◽  
Author(s):  
HO-JUN Lee ◽  
Chul-Hi Han ◽  
Choong-Ki Kim
Keyword(s):  
Young’S Modulus ◽  
Boron Concentration ◽  
Young's Modulus ◽  
Silicon Layer ◽  
Misfit Dislocations ◽  
Residual Tensile Stress ◽  
X Ray Diffraction ◽  
Elastic Parameters ◽  
Boron Doped ◽  
Doped Silicon

AbstractIn this paper, various elastic parameters of heavily boron-doped silicon layer have been extracted by eliminating the misfit dislocations in the layer. The dislocation-free silicon membranes doped with the boron concentration of 1.3 × 1020 atoms/cm3 have been fabricated and the Young’s modulus of 1.45 × 1012 dyn/cm2 and residual tensile stress of 2.7 × 109 dyn/cm2 have been extracted by blister method. From the Young’s modulus and residual stress, the residual tensile strain of 1.34 × 10−3, lattice constant of 5.424 Å, and misfit coefficient of 1.03 × 10−23 cm3/atom have been calculated. These parameters are very similar to those obtained from X-ray diffraction analysis and theory.

Noncrucial Role of the Defects in the Splitting for Hydrogen Implanted Silicon With High Boron Concentration

1998 ◽  
Vol 540 ◽  
Author(s):  
V.P. Popov ◽  
V.F. Stas ◽  
I.V. Antonova
Keyword(s):  
Structural Properties ◽  
Boron Concentration ◽  
Local Stress ◽  
Gas Pressure ◽  
Boron Doped ◽  
Doped Silicon ◽  
High Boron

AbstractThe present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects.

An Empirical Formula for the Estimation of the Residual Stress in Boron-Doped Silicon Films

2003 ◽  
Author(s):  
Ok Chan Jeong ◽  
Sang Sik Yang
Keyword(s):  
Residual Stress ◽  
Correlation Coefficient ◽  
Concentration Profile ◽  
Empirical Formula ◽  
Boron Concentration ◽  
Silicon Film ◽  
Stress Profile ◽  
Residual Stress Profile ◽  
Boron Doped ◽  
Doped Silicon

In this paper, a novel empirical formula is proposed to estimate the residual stress profile as a function of the boron-doped silicon film depth. The residual stress profile is derived from the proposed boron concentration profile, which is a second order function of the film depth, the boron diffusion length, and the correlation coefficient between the residual stress and the boron concentration. The proposed empirical formula is verified by the comparison of the previous results such as the residual stress profiles determined by the quantitative analysis method and the boron concentration profile measured by SIMS and spreading resistance. If the correlation coefficient increases, the residual average and maximum stresses are exponentially reduced. If the drive-in process time or the temperature increase, the compressive stress develops on the surface of the boron-doped silicon film due to the thermal oxidation process.

Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy

2005 ◽  
Vol 108-109 ◽  
pp. 655-662 ◽  
Author(s):  
Markus Zschorsch ◽  
G. Gärtner ◽  
Hans Joachim Möller ◽  
Wilfried von Ammon
Keyword(s):  
Fourier Transform ◽  
Low Temperature ◽  
Ftir Spectroscopy ◽  
Potassium Hydroxide ◽  
Boron Concentration ◽  
Free Carrier ◽  
Subsequent Growth ◽  
Boron Doped ◽  
Doped Silicon ◽  
Fusion Analysis

The content of interstitially solved oxygen (Oi) in heavily boron doped silicon (9- 29 mcm) were measured by low temperature Fourier transform infrared (FTIR) spectroscopy. Therefor an alternative thinning technique for silicon is used: by alkaline potassium hydroxide etching (KOH) prepolished silicon specimens are thinned down to 8 - 60 microns. The optimal end thickness depends on the boron concentration which specifies the free carrier concentration. Specimens with three different boron concentrations (9/19/29 mcm) were examined. The results are compared with gas fusion analysis (GFA) measurements. Furthermore the precipitated oxygen Oi was measured for a RTA process (20s@1250°C) with subsequent growth steps (4h@780°C + 16h@1000°C).

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling
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