An Empirical Formula for the Estimation of the Residual Stress in Boron-Doped Silicon Films
In this paper, a novel empirical formula is proposed to estimate the residual stress profile as a function of the boron-doped silicon film depth. The residual stress profile is derived from the proposed boron concentration profile, which is a second order function of the film depth, the boron diffusion length, and the correlation coefficient between the residual stress and the boron concentration. The proposed empirical formula is verified by the comparison of the previous results such as the residual stress profiles determined by the quantitative analysis method and the boron concentration profile measured by SIMS and spreading resistance. If the correlation coefficient increases, the residual average and maximum stresses are exponentially reduced. If the drive-in process time or the temperature increase, the compressive stress develops on the surface of the boron-doped silicon film due to the thermal oxidation process.