Local Channel Temperature Measurements on Pseudomorphic High Electron Mobility Transistors by Photoluminescence Spectroscopy

1998 ◽  
Vol 516 ◽  
Author(s):  
J.P. Landesman ◽  
E. Martin ◽  
B. Depret ◽  
A. Fily ◽  
P. Braun
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Energy Shift ◽  
High Electron ◽  
High Electron Mobility ◽  
Spatially Resolved ◽  
Electron Mobility Transistors ◽  
Channel Temperature ◽  
Source Voltage ◽  
Temperature Maps

AbstractThe technique of spatially resolved photoluminescence (PL) spectroscopy was used to determine the local channel temperatures on GaAs/GaInAs/GaAlAs pseudomorphic high electron mobility transistors. By focusing a laser beam onto the different regions of the DC-biased transistor, it is shown that the channel temperature can be determined from the energy shift of one of the peaks in the PL spectra, with a spatial resolution of about 1 µm and a temperature resolution in the order of 1 °C. In particular, an asymmetry in the temperature distribution between the drain and source sides is observed. Using this approach, detailed temperature maps of the devices were obtained, as a function of the gate-source voltage VGS. These experimental temperature values are also compared with predictions derived from an analytical model of the thermal resistance in these devices.

scholarly journals Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

2009 ◽  
Vol 56 (12) ◽  
pp. 2895-2901 ◽  
Author(s):  
Jungwoo Joh ◽  
JesÚs A. del Alamo ◽  
Uttiya Chowdhury ◽  
Tso-Min Chou ◽  
Hua-Quen Tserng ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Channel Temperature

scholarly journals Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 42
Author(s):  
Hsin-Ying Lee ◽  
Ying-Hao Ju ◽  
Jen-Inn Chyi ◽  
Ching-Ting Lee
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
Planar Channel ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Source Voltage ◽  
Double Channel

In this work, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 × 1013 cm−2 and an electron mobility of 1770 cm2/V-s were obtained. Using a vapor cooling condensation system to deposit high insulating 30-nm-thick Ga2O3 film as a gate oxide layer, double-hump transconductance behaviors with associated double-hump maximum extrinsic transconductances (gmmax) of 89.8 and 100.1 mS/mm were obtained in the double-channel planar MOSHEMTs. However, the double-channel devices with multiple-mesa-fin-channel array with a gmmax of 148.9 mS/mm exhibited single-hump transconductance behaviors owing to the better gate control capability. Moreover, the extrinsic unit gain cutoff frequency and maximum oscillation frequency of the devices with planar channel and multiple-mesa-fin-channel array were 5.7 GHz and 10.5 GHz, and 6.5 GHz and 12.6 GHz, respectively. Hooge’s coefficients of 7.50 × 10−5 and 6.25 × 10−6 were obtained for the devices with planar channel and multiple-mesa-fin-channel array operating at a frequency of 10 Hz, drain–source voltage of 1 V, and gate–source voltage of 5 V, respectively.

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