Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors

2011 ◽  
Vol 29 (2) ◽  
pp. 020603 ◽  
Author(s):  
E. A. Douglas ◽  
F. Ren ◽  
S. J. Pearton
Keyword(s):  
Finite Element ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Finite Element Simulations ◽  
High Electron ◽  
Device Design ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Channel Temperature

scholarly journals Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

2009 ◽  
Vol 56 (12) ◽  
pp. 2895-2901 ◽  
Author(s):  
Jungwoo Joh ◽  
JesÚs A. del Alamo ◽  
Uttiya Chowdhury ◽  
Tso-Min Chou ◽  
Hua-Quen Tserng ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Channel Temperature

Local Channel Temperature Measurements on Pseudomorphic High Electron Mobility Transistors by Photoluminescence Spectroscopy

1998 ◽  
Vol 516 ◽  
Author(s):  
J.P. Landesman ◽  
E. Martin ◽  
B. Depret ◽  
A. Fily ◽  
P. Braun
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Energy Shift ◽  
High Electron ◽  
High Electron Mobility ◽  
Spatially Resolved ◽  
Electron Mobility Transistors ◽  
Channel Temperature ◽  
Source Voltage ◽  
Temperature Maps

AbstractThe technique of spatially resolved photoluminescence (PL) spectroscopy was used to determine the local channel temperatures on GaAs/GaInAs/GaAlAs pseudomorphic high electron mobility transistors. By focusing a laser beam onto the different regions of the DC-biased transistor, it is shown that the channel temperature can be determined from the energy shift of one of the peaks in the PL spectra, with a spatial resolution of about 1 µm and a temperature resolution in the order of 1 °C. In particular, an asymmetry in the temperature distribution between the drain and source sides is observed. Using this approach, detailed temperature maps of the devices were obtained, as a function of the gate-source voltage VGS. These experimental temperature values are also compared with predictions derived from an analytical model of the thermal resistance in these devices.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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