Thermal Modeling of Graphene Layer on the Peak Channel Temperature of AlGaN∕GaN High Electron Mobility Transistors

2009 ◽  
Vol 12 (2) ◽  
pp. H29 ◽  
Author(s):  
Geunwoo Ko ◽  
Jihyun Kim
Keyword(s):  
Electron Mobility ◽  
Graphene Layer ◽  
Thermal Modeling ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Channel Temperature

scholarly journals Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

2009 ◽  
Vol 56 (12) ◽  
pp. 2895-2901 ◽  
Author(s):  
Jungwoo Joh ◽  
JesÚs A. del Alamo ◽  
Uttiya Chowdhury ◽  
Tso-Min Chou ◽  
Hua-Quen Tserng ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Channel Temperature

scholarly journals Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

2021 ◽  
Vol 11 (22) ◽  
pp. 10720
Author(s):  
Abdelhamid Amar ◽  
Bouchaïb Radi ◽  
Abdelkhalak El Hami
Keyword(s):  
Electron Mobility ◽  
Power Dissipation ◽  
Operating Temperature ◽  
Thermal Modeling ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Reliability Methods

The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated.

Local Channel Temperature Measurements on Pseudomorphic High Electron Mobility Transistors by Photoluminescence Spectroscopy

1998 ◽  
Vol 516 ◽  
Author(s):  
J.P. Landesman ◽  
E. Martin ◽  
B. Depret ◽  
A. Fily ◽  
P. Braun
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Energy Shift ◽  
High Electron ◽  
High Electron Mobility ◽  
Spatially Resolved ◽  
Electron Mobility Transistors ◽  
Channel Temperature ◽  
Source Voltage ◽  
Temperature Maps

AbstractThe technique of spatially resolved photoluminescence (PL) spectroscopy was used to determine the local channel temperatures on GaAs/GaInAs/GaAlAs pseudomorphic high electron mobility transistors. By focusing a laser beam onto the different regions of the DC-biased transistor, it is shown that the channel temperature can be determined from the energy shift of one of the peaks in the PL spectra, with a spatial resolution of about 1 µm and a temperature resolution in the order of 1 °C. In particular, an asymmetry in the temperature distribution between the drain and source sides is observed. Using this approach, detailed temperature maps of the devices were obtained, as a function of the gate-source voltage VGS. These experimental temperature values are also compared with predictions derived from an analytical model of the thermal resistance in these devices.

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