Doping Influence on TiSi2 C49-C54 Phase Conversion Kinetics by Micro-Raman Spectroscopy

1998 ◽  
Vol 514 ◽  
Author(s):  
F. Meinardi ◽  
S. Quilici ◽  
L. Moro ◽  
G. Queirolo ◽  
A. Sabbadini
Keyword(s):  
Phase Transition ◽  
Activation Energy ◽  
Growth Rate ◽  
Polycrystalline Silicon ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Nucleation Center ◽  
Phase Conversion ◽  
Micro Raman Spectroscopy ◽  
Center Density

ABSTRACTMicroRaman measurements on titanium silicide films grown on single-crystal and polycrystalline silicon substrates doped with As, BF2 and P have been performed. The data collected on patterns of different areas and shapes, but comparable doping level show that the doping has negligible effects both on C54 nucleation center density and on activation energy for the C49/C54 phase transition. On the contrary, substrate strongly affects the C54 growth rate, ruling the ability of the C54 phase to propagate after the nucleation.

Grain Growth in Titanium Silicide Films During the Formation Reaction

1990 ◽  
Vol 202 ◽  
Author(s):  
Yunji L. Corcoran ◽  
Alexander H. King ◽  
Nimal deLanerolle ◽  
Bonggi Kim ◽  
John Berg
Keyword(s):  
Growth Rate ◽  
Grain Growth ◽  
Cross Section ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Experimental Conditions ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Relationship Of

ABSTRACTTitanium films of 0.5 µm thickness were sputter deposited on silicon substrates. After rapid thermal annealing at temperatures ranging from 600°C to 850°C for times up to 45 seconds in nitrogen, transmission electron microscope (TEM) cross section specimens were made from the wafers. Grain sizes of the resulting titanium disilicide were measured from TEM cross section micrographs. The results show that C49-TiSi2 has a different grain growth rate than C54-TiSi2- Under our experimental conditions, C54-TiSi2 has a much higher growth rate. Titanium silicide on arsenic implanted silicon substrates shows a lower grain growth rate than that on unimplanted substrates under the same conditions. The thickness of the silicide layer was also measured for each specimen. The relationship of thickness and grain size will be discussed.

Deposition and Crystallisation Behaviour of Amorphous Silicon Thin Films Obtained by Pyrolysis of Disilane Gas at Very Low Pressure

1994 ◽  
Vol 345 ◽  
Author(s):  
T. Kretz ◽  
D. Pribat ◽  
P. Legagneux ◽  
F. Plais ◽  
O. Huet ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Electrical Conductance ◽  
Chemical Vapor ◽  
Crystalline Fraction ◽  
Silicon Thin Films ◽  
Crystallisation Behaviour

AbstractHigh purity amorphous silicon layers were obtained by ultrahigh vacuum (millitorr range) chemical vapor deposition (UHVCVD) from disilane gas. The crystalline fraction of the films was monitored by in situ electrical conductance measurements performed during isothermal annealings. The experimental conductance curves were fitted with an analytical expression, from which the characteristic crystallisation time, tc, was extracted. Using the activation energy for the growth rate extracted from our previous work, we were able to determine the activation energy for the nucleation rate for the analysed-films. For the films including small crystallites we have obtained En ∼ 2.8 eV, compared to En ∼ 3.7 eV for the completely amorphous ones.

AVRAMI–KOLMOGOROV–JOHNSON–MEHL KINETICS FOR NANOPARTICLES

2008 ◽  
Vol 15 (05) ◽  
pp. 605-612 ◽  
Author(s):  
VLADIMIR P. ZHDANOV
Keyword(s):  
Phase Transition ◽  
Activation Energy ◽  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Infinite Medium ◽  
Local State ◽  
Elementary Reaction ◽  
Regular Surface

In the conventional Avrami–Kolmogorov–Johnson–Mehl model, the reaction or phase transition occurring in the 2D or 3D infinite medium is considered to start and proceed around randomly distributed and/or appearing nucleation centers. The radius of the regions transformed is assumed to linearly increase with time. The Monte Carlo simulations presented, illustrate what may happen if the transformation takes place in nanoparticles. The attention is focused on nucleation on the regular surface, edge and corner sites, and on the dependence of the activation energy for elementary reaction events on the local state of the sites.

Pulsed Microwave Processing of High-TC Superconducting Films

1992 ◽  
Vol 269 ◽  
Author(s):  
R. B. James ◽  
R. A. Alvarez ◽  
A. K. Stamper ◽  
X. J. Bao ◽  
T. E. Schlesinger ◽  
...  
Keyword(s):  
Phase Transition ◽  
Barium Copper Oxide ◽  
Precursor Film ◽  
Silicon Substrates ◽  
Molten Layer ◽  
Time Resolved ◽  
Barium Copper ◽  
In Situ Experiments ◽  
Yttrium Barium

ABSTRACTWe have used 2.0-μsec microwave pulses at a frequency of 2.856 GHz to rapidly heat thin amorphous yttrium-barium-copper-oxide (YBCO) films deposited onto silicon substrates. The samples were irradiated inside a WR-284 waveguide by single-pass TE10 pulses in a traveling wave geometry. X-ray diffractometry studies show that an amorphous-to-crystalline phase transition occurs for incident pulse powers exceeding about 6 MW, in which case the amorphous YBCO layer is converted to Y2BaCuO5. Microscopy of the irradiated film reveals that the phase transition is brought about by melting of the YBCO precursor film and crystallization of the molten layer upon solidification. Time-resolved in situ experiments of the microwave reflectivity (R) and transmissivity (T) show that there is an abrupt change in R for microwave pulse powers exceeding the melt threshold, so that measurements of R and T can be used to monitor the onset of surface melting.

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

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