Thin self-supporting polycrystalline silicon substrates-A new role for EFG cylinders

1997 ◽  
Author(s):  
J. P. Kalejs
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Substrates

Electrical and Structural Properties of Solution Grown Silicon Layers on Polycrystalline Silicon Substrates

1996 ◽  
Vol 51-52 ◽  
pp. 143-148
Author(s):  
B. Steiner ◽  
Günter Wagner ◽  
Axel Voigt ◽  
W. Dorsch ◽  
Horst P. Strunk
Keyword(s):  
Structural Properties ◽  
Polycrystalline Silicon ◽  
Silicon Substrates

Investigation of an in-situ probe for phase transformations during RTP silicidation

1992 ◽  
Vol 260 ◽  
Author(s):  
R. J. Schreutelkamp ◽  
P. Vandenabeele ◽  
B. Deweerdt ◽  
W. Coppye ◽  
C. Vermeiren ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Thermal Degradation ◽  
Phase Transformations ◽  
Doping Level ◽  
Polycrystalline Silicon ◽  
Silicon Substrates ◽  
Si Substrates ◽  
Background Doping ◽  
Emissivity Measurements

ABSTRACTIn-situ emissivity measurements at a wavelength of 2.4 μα were used to monitor RTP Co silicidation on crystalline and polycrystalline silicon substrates. The influence of various parameters influencing the silicidation reaction was extensively studied. It is shown that particularly the phase transformation from CoSi to the final suicide phase, COSi2, strongly depends on parameters such as background doping level and type of substrate. This is illustrated for As-doped substrates. The method is extremely sensitive for the in-situ detection of the thermal degradation of thin COSi2 films at high temperatures, which is demonstrated for 25 nm COSi2 layers on highly As-doped c-Si substrates.

Doping Influence on TiSi2 C49-C54 Phase Conversion Kinetics by Micro-Raman Spectroscopy

1998 ◽  
Vol 514 ◽  
Author(s):  
F. Meinardi ◽  
S. Quilici ◽  
L. Moro ◽  
G. Queirolo ◽  
A. Sabbadini
Keyword(s):  
Phase Transition ◽  
Activation Energy ◽  
Growth Rate ◽  
Polycrystalline Silicon ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Nucleation Center ◽  
Phase Conversion ◽  
Micro Raman Spectroscopy ◽  
Center Density

ABSTRACTMicroRaman measurements on titanium silicide films grown on single-crystal and polycrystalline silicon substrates doped with As, BF2 and P have been performed. The data collected on patterns of different areas and shapes, but comparable doping level show that the doping has negligible effects both on C54 nucleation center density and on activation energy for the C49/C54 phase transition. On the contrary, substrate strongly affects the C54 growth rate, ruling the ability of the C54 phase to propagate after the nucleation.

A Led Based on Porous Polycrystalline Silicon

1997 ◽  
Vol 486 ◽  
Author(s):  
W. N. Huang ◽  
K. Y. Tong ◽  
P. W. Chan
Keyword(s):  
Silicon Substrate ◽  
Polycrystalline Silicon ◽  
Polycrystalline Material ◽  
Forward Bias ◽  
Depletion Region ◽  
Silicon Substrates ◽  
Large Area ◽  
Electron Hole ◽  
Bright Spots ◽  
Current Characteristics

AbstractPrevious studies on electroluminescence in porous silicon were based on crystalline wafers. In this paper, we shall report the characteristics of a LED based on porous effects in a cast polycrystalline silicon substrate. A layer of porous region was first formed on a cast polycrystalline silicon substrate by anodization, followed by the deposition of a semitransparent Au layer. Under forward bias, the LED emits stable yellowish white light (with the presence of bright spots) for currents above 20 mA/cm2. From the electroluminescence spectra measured, we suggest that the emission is due to the recombination of electron-hole pairs in a microplasma region. We propose a model where the microplasma is present in the depletion region of the heterojunction formed between the bulk polysilicon and the surface porous polysilicon. The defects and grain boundaries in a polycrystalline material facilitate the formation of such microplasma. The heterojunction model will also be used to explain the current characteristics of the LED. The effect on the LED characteristics due to indium coating on the porous substrate prior to Au deposition was studied, and the results agree with the heterojunction model. Our work shows that cast polycrystalline silicon substrates have potential for LED fabrication in cheap and large area applications.

Comparison of high-κ Nd2O3 and NdTiO3 dielectrics deposited on polycrystalline silicon substrates

2014 ◽  
Vol 570 ◽  
pp. 412-416 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Hsiang Chen ◽  
Yu-Cheng Liao ◽  
Jin Zhou Deng ◽  
Yu Cheng Chu ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Substrates

Hydrogen Passivation of Defects in Electron Irradiated Polycrystalline Silicon Solar Cells

1995 ◽  
Vol 378 ◽  
Author(s):  
R.R. Bilyalov ◽  
B.M. Abdurakhmanov
Keyword(s):  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Deep Level ◽  
Photovoltaic Performance ◽  
Silicon Solar Cells ◽  
Silicon Substrates ◽  
Hydrogen Passivation ◽  
Boron Doped ◽  
Transient Spectroscopy ◽  
P Type

AbstractThe effect of hydrogen passivation on photovoltaic performance of 1 MeV electron irradiated polycrystalline cast silicon solar cells is described. These cells were processed on cast p-type boron doped polycrystalline silicon substrates using standard technology. Passivation was made by low-energy hydrogen ion implantation on the front side. Cells performance was measured as a function of fluence, and it was found that the hydrogenated cell had the higher radiation resistance.Defect behavior were studied using deep level transient spectroscopy and infra-red spectroscopy. It was shown that the concentration of vacancies (Ec −0,09 eV), divacancies (Ec −0,23 eV) and A-centers (Ec −0,18 eV) is significantly lower in hydrogenated samples. This consistency strengthens the belief that hydrogen interacts with vacancy-type defects to prevent formation of the secondary radiation defects. It is confirmed by IR-measurements.

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