Hydrogen-induced Changes of The Microscopic Structure of Microcrystalline Silicon

1998 ◽  
Vol 513 ◽  
Author(s):  
I. Kaiser ◽  
N. H. Nickel ◽  
W. Pilz ◽  
W. Fuhs
Keyword(s):  
Cyclotron Resonance ◽  
Lattice Strain ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Microcrystalline Silicon ◽  
Crystalline Fraction ◽  
Before And After ◽  
Induced Changes ◽  
Substrate Temperatures ◽  
Hydrogenation Treatment

ABSTRACTMicrocrystalline silicon samples were exposed to an electron cyclotron resonance (ECR) hydrogen plasma at various exposure times and substrate temperatures. Before and after each post-hydrogenation treatment the crystalline fraction, Xc, was determined from Raman backscattering spectra. The results reveal that the change of Xc strongly depends on the structural composition of the starting material. Amorphous samples exhibit an increase of Xc while for ltc-Si specimens the Xc decreases. The decrease of Xc is enhanced for specimens with a high initial crystalline fraction. The same plasma treatment of Si-wafers did not lead to amorphisation. We conclude that the presence of lattice strain is required to observe a H-induced decrease of Xc.

Diffusion and Effusion of Hydrogen in Microcrystalline Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
W. Beyer ◽  
P. Hapke ◽  
U. Zastrow
Keyword(s):  
Diffusion Coefficient ◽  
Infrared Absorption ◽  
Cyclotron Resonance ◽  
Hydrogen Diffusion ◽  
Electron Cyclotron Resonance ◽  
Microcrystalline Silicon ◽  
Hydrogen Diffusion Coefficient ◽  
Internal Surfaces ◽  
Substrate Temperatures ◽  
Hydrogen Effusion

ABSTRACTThe diffusion and effusion of hydrogen in hydrogenated microcrystalline silicon films deposited in an electron cyclotron resonance reactor were studied for various deposition temperatures Ts. For deposition temperatures below 250°C, hydrogen effusion is found to be dominated by desorption of hydrogen from internal surfaces followed by rapid out-diffusion of H2. Higher substrate temperatures result in an increased hydrogen stability suggesting the growth of a more compact material. For this latter type of samples, a hydrogen diffusion coefficient similar as in compact plasma-grown a-Si:H films is found despite a different predominant bonding of hydrogen according to infrared absorption.

Growth Mechanism of Microcrystalline Silicon Deposited by ECRCVD

1996 ◽  
Vol 452 ◽  
Author(s):  
I. Beckers ◽  
E. Conrad ◽  
P. Müller ◽  
N. H. Nickel ◽  
I. Sieber ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Growth Mechanisms ◽  
Microcrystalline Silicon ◽  
Crystalline Fraction ◽  
Hydrogen Dilution ◽  
Si Films ◽  
Scanning Electron

AbstractMicrocrystalline silicon (μc-Si) films were prepared by electron cyclotron resonance assisted chemical vapor deposition (ECRCVD) using helium, argon and hydrogen dilution. The crystalline fraction was estimated from Raman backscattering spectra and scanning electron-microscopy (SEM) was used to obtain information on roughness and homogeneity of the films. For hydrogen dilution the highest crystallinity (Xc = 85 %) occurs at a ratio of ΔH = [H2]/([H2]+[SiH4])= 0.98. At the same time the deposition rate decreases continuously with increasing H2 dilution. These results are consistent with the idea that H etching promotes the growth of μc-Si. At ΔH > 0.98 a Xc decreases due to a H mediated transition of small crystallites into amorphous tissue. The implications of these results for the growth mechanisms are discussed.

Experimental study of the hot and warm electron populations in an electron cyclotron resonance argon–oxygen–hydrogen plasma

1995 ◽  
Vol 2 (6) ◽  
pp. 2138-2140 ◽  
Author(s):  
R. Friedlein ◽  
S. Herpich ◽  
H. Hiller ◽  
H. Wirth ◽  
G. Zschornack ◽  
...  
Keyword(s):  
Experimental Study ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Electron Cyclotron
Sign in / Sign up

Export Citation Format

Share Document