Growth of Iii-Nitrides by Rf-Assisted Molecular Beam Epitaxy

1998 ◽  
Vol 512 ◽  
Author(s):  
E. C. Piquette ◽  
P. M. Bridger ◽  
Z. Z. Bandić ◽  
T. C. Mcgill
Keyword(s):  
Electric Fields ◽  
Molecular Beam ◽  
Plasma Source ◽  
Rf Plasma ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Wide Range ◽  
Device Structures ◽  
Hall Technique

ABSTRACTGaN, AlGaN, AIN were grown on (0001) A1203 substrates by MBE using a RF plasma source and employing an AIN buffer layer. The films were characterized by RHEED, AFM, and x-ray diffraction, and electrical properties were measured by Hall technique. RHEED observations indicate that the polarity of the films is likely predominantly N-face, although Ga-face inversion domains can be observed in some films by AFM. Symmetric x-ray rocking curve widths as low as 39 arcseconds are achieved for some layers, while asymmetric peaks show widths of 240–300 arcsec. Control of Si doping over a wide range is demonstrated, which is important for design of high power device structures. Gold Schottky barrier m-v-n+diodes were fabricated which achieve high reverse electric fields before edge breakdown.

Study of High Nitrogen Compositions GaNAs and GaInNAs Material Quality by X-ray Diffraction and Photoluminescence

2001 ◽  
Vol 693 ◽  
Author(s):  
T. K. Ng ◽  
S. F. Yoon ◽  
S. Z. Wang ◽  
W. K. Loke ◽  
W. J. Fan
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Optical Fiber Communication ◽  
Plasma Source ◽  
Rf Plasma ◽  
X Ray Diffraction ◽  
High Nitrogen ◽  
Fiber Communication ◽  
X Ray ◽  
Long Wavelength

AbstractGaNAs and GaInNAs growths are subjects of considerable interest due to its technological importance in long wavelength lasers emitting within the optical-fiber communication wavelength window (1.31 – 1.55 m m). We study GaNAs and GaInNAs materials growth on (100) semi-insulating GaAs substrate with high nitrogen compositions (>2%) using a solid source molecular beam epitaxy (SSMBE) system in conjunction with a RF plasma source. GaNAs layer with high nitrogen compositions of 4.85% and 6% with good XRD peak intensities were successfully grown. GaInNAs quantum wells (QWs) were then grown with reference to the nitrogen compositions measured in the GaNAs materials to obtain nitrogen compositions > 2%. The photoluminescence (PL) peak positions of the GaInNAs QWs blueshifted after annealing at 840°C and 10min. It was found that the blueshift of PL peaks are highly dependent on nitrogen compositions.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Si and Mg Doped Gan Layers Grown by Gas Source Molecular Beam Epitaxy Using Ammonia

1997 ◽  
Vol 482 ◽  
Author(s):  
N. Grandjean ◽  
J. Massies ◽  
M. Leroux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray ◽  
Sapphire Substrates ◽  
Gas Source ◽  
P Type ◽  
Mg Doped

AbstractThe growth of GaN layers was carried out on c-plane sapphire substrates by molecular beam epitaxy (MBE) using NH3. Undoped GaN layers were grown at 830°C with growth rates larger than 1 μm/h. Optical properties are characteristics of high quality GaN material and the linewidth of x-ray diffraction (0002) rocking curve is less than 350 arcsec. N- and p-type doping were achieved by using solid sources of Si and Mg. No post-growth annealing was needed to activate the Mg acceptors. As-grown GaN:Mg layers exhibit hole concentrations of 3×1017 cm−3and mobilities of 8 cm2/Vs at 300 K. Light emitting diodes (LEDs) based on GaN p-n homojunction have been processed. The turn on voltage is 3 V and the forward voltage is 3.7 V at 20 mA. The 300 K electroluminescence (EL) peaks at 390 nm.

Molecular Beam Epitaxy Study of InAs/GaSb Heteroepitaxy on The (111)A and (111)B Orientations

1992 ◽  
Vol 263 ◽  
Author(s):  
J. A. Dura ◽  
J. T. Zborowski ◽  
T. D. Golding
Keyword(s):  
Molecular Beam ◽  
High Energy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Group V ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Wide Range ◽  
Molecular Beam Epitaxial Growth ◽  
Secondary Ion

ABSTRACTWe have investigated the molecular beam epitaxial growth of homoepitaxial InAs and GaSb and InAs/GaSb heterostructures on both the (111)A and (111)B orientations. Our studies have found that high quality GaSb epilayers can be grown on both the (111)A and (111l)B orientations over a wide range of growth temperatures and flux ratios. Reflection high energy electron diffr-action phase diagrams for GaSb [111[ are presented. InAs/GaSb heterostructures, simultaneously grown on (11l)A and (111)B orientations, have been investigated by secondary ion mass spectroscopy depth profiles and double crystal x-ray diffraction. Unintentional incorporation of the ‘second’ group-V element is found to be approximately three times greater in the (111)A orientation than in the (111)B for both species.

Infrared and Ultraviolet Raman Spectra of AlN Thin Films Grown on Si(111)

2001 ◽  
Vol 693 ◽  
Author(s):  
V. M. Naik ◽  
D. Haddad ◽  
Y. V. Danylyuk ◽  
R. Naik ◽  
G. W. Auner ◽  
...  
Keyword(s):  
Plasma Source ◽  
High Energy ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Rocking Curve ◽  
X Ray ◽  
Near Resonance ◽  
Enhanced Raman Scattering ◽  
Alternative Techniques ◽  
The One

AbstractInfrared (IR) spectroscopy and ultraviolet near-resonance enhanced Raman scattering have been used as alternative techniques to characterize the AlN films grown on Si(111). Epitaxial AlN films have been prepared by plasma source molecular beam epitaxy (PSMBE) at growth temperatures of 400 and 650 oC. The AlN/Si grown at 650°C shows distinct reflection high-energy electron diffraction (RHEED) patterns with the following epitaxial relations: AlN [0001] ‖ Si [111], and AlN < 011 0 > ‖ Si < 112 >. This is in sharp contrast with the observation of a spotty RHEED pattern for AlN/Si sample grown at 400°C, which appeared the same when viewed along any Si azimuth. Furthermore, the X-ray diffraction (XRD) rocking curve width showed a significant reduction from 5.7ofor sample grown at 400°C to 2° for the one grown at 650°C. The observation of Raman active A1(LO) and E2, and IR active E1(TO) zone center phonons, in both the films, is in accordance with the c-axis orientation of the films. However, the observed phonon mode frequencies and line widths indicate that the AlN samples grown at 400°C have less strain but more disorder compared to the ones grown at 650°C in agreement with RHEED and XRD data.

MBE Growth of Cubic InN

2006 ◽  
Vol 955 ◽  
Author(s):  
Jörg Schörmann ◽  
Donat Josef As ◽  
Klaus Lischka
Keyword(s):  
Hexagonal Phase ◽  
Rf Plasma ◽  
X Ray Diffraction ◽  
Pure Zinc ◽  
Mbe Growth ◽  
Rocking Curve ◽  
X Ray ◽  
Zinc Blende ◽  
Wurtzite Hexagonal Phase ◽  
Gan Buffer Layer

ABSTRACTCubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers consist of a nearly phase-pure zinc blende (cubic) structure with a small fraction of the wurtzite (hexagonal) phase grown on the (111) facets of the cubic layer. The content of hexagonal inclusions is decreasing with decreasing growth temperature. The full-width at half-maximum (FWHM) of c-InN (002) rocking curve is about 50 arcmin. Low temperature photoluminescence measurements reveal a band gap of about 0.61eV for cubic InN.

Effects of Stress-relieving AlN Interlayers in GaN-on-Si Grown by Plasma-assisted Molecular Beam Epitaxy

2008 ◽  
Vol 1068 ◽  
Author(s):  
Adam Adikimenakis ◽  
Suman-Lata Sahonta ◽  
George Dimitrakopulos ◽  
Jaroslav Domagala ◽  
Philomela Komninou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Rf Plasma ◽  
X Ray Diffraction ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Stress Relieving ◽  
Gan On Si ◽  
Inversion Domain Boundaries

ABSTRACTThe insertion of an AlN interlayer for tensile strain relief in GaN thin films grown on Si (111) on-axis and vicinal substrates by nitrogen rf plasma source molecular beam epitaxy has been investigated. The 15 nm AlN interlayer was inserted between the bottom 0.5 micron GaN layer and the top 1.0 micron GaN layer. The interlayer was very effective to reduce the tensile stress in the overall 1.5 micron GaN/Si film to the level required for complete avoidance of microcracks, which were present in high densities in GaN/Si heterostructures grown without an AlN interlayer. The strain of the AlN interlayer, as well as the strain in all the layers of the entire GaN/Si heterostructure was analyzed by x-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. Reciprocal space map in XRD indicated that the 15 nm AlN interlayer was coherently strained with the GaN films. However TEM observations revealed that the AlN interlayer was partially relaxed in local regions. The AlN interlayer was also observed to interfere with the GaN growth process. In particular, above morphological features such as V-defects, GaN was overgrown with a large density of threading dislocations and inversion domain boundaries.

Growth and Characterization of Epitaxial Al1−xInxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
M. J. Lukitsch ◽  
G. W. Auner ◽  
R. Naik ◽  
V. M. Naik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Alloy Segregation

ABSTRACTEpitaxial Al1−xInxN films (thickness ∼150 nm) with 0 ≤ × ≤ 1 have been grown by Plasma Source Molecular Beam Epitaxy on Sapphire (0001) at a low substrate temperature of 375°C and were characterized by reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), and atomic force microscopy (AFM). Both RHEED and XRD measurements confirm the c-plane growth of Al1-xInxN films on sapphire (0001) with the following epitaxial relations: Nitride [0001] ∥ Sapphire [0001] and Nitride < 0110 > ∥ Sapphire <2110>. The films do not show any alloy segregation. However, the degree of crystalline mosaicity and the compositional fluctuation increases with increasing In concentration. Further, AFM measurements show an increased surface roughness with increasing In concentration in the alloy films.

X-Ray Diffraction Studies of Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
G. Kowaljki ◽  
M. Leszcjynski ◽  
A. Kurpiewski ◽  
M. Kaminska ◽  
T. Suski ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Lattice Relaxation ◽  
Light Illumination ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Large Lattice ◽  
Low Temperature Gaas ◽  
Substrate Temperatures

ABSTRACTGaAs layers grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) were studied in a novel purpose designed X-ray experiment. It combines X-ray double crystal rocking curve measurements with some elements usually found in optical setups like light illumination at liquid nitrogen temperatures applied to transfer EL2 type defects into metastable state. Ability to record such transfers with the X-ray experiment as well as large lattice relaxation accompanying this process is presented.

Epitaxial Growth of Zinc-Blende Ain by Plasma Source Molecular Beam Epitaxy

1999 ◽  
Vol 570 ◽  
Author(s):  
Margarita P. Thompson ◽  
Gregory W. Auner ◽  
Andrew R. Drews ◽  
Tsvetanka S. Zheleva ◽  
Kenneth A. Jones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Plasma Source ◽  
High Energy ◽  
Lattice Parameter ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Blende

ABSTRACTEpitaxial zinc-blende AIN films as thick as 2000Å were deposited on Si (100) substrates by plasma source molecular beam epitaxy (PSMBE). The metastable zinc-blende form of AIN was observed to occur when pulse d.c. power was supplied to the PSMBE hollow cathode source. Reflection High Energy Electron Diffraction (RHEED) showed that the films possess a four fold symmetry. X-Ray Diffraction (XRD) revealed two strong peaks corresponding to the (200) and (400) reflections from the zinc-blende AIN. The lattice parameter of the films was calculated to be approximately 4.373Å. TEM, performed on one of the films, revealed that the AIN is cubic, single crystalline and epitaxial with respect to the Si (100) substrate.

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