Epitaxial Growth of Zinc-Blende Ain by Plasma Source Molecular Beam Epitaxy

1999 ◽  
Vol 570 ◽  
Author(s):  
Margarita P. Thompson ◽  
Gregory W. Auner ◽  
Andrew R. Drews ◽  
Tsvetanka S. Zheleva ◽  
Kenneth A. Jones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Plasma Source ◽  
High Energy ◽  
Lattice Parameter ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Blende

ABSTRACTEpitaxial zinc-blende AIN films as thick as 2000Å were deposited on Si (100) substrates by plasma source molecular beam epitaxy (PSMBE). The metastable zinc-blende form of AIN was observed to occur when pulse d.c. power was supplied to the PSMBE hollow cathode source. Reflection High Energy Electron Diffraction (RHEED) showed that the films possess a four fold symmetry. X-Ray Diffraction (XRD) revealed two strong peaks corresponding to the (200) and (400) reflections from the zinc-blende AIN. The lattice parameter of the films was calculated to be approximately 4.373Å. TEM, performed on one of the films, revealed that the AIN is cubic, single crystalline and epitaxial with respect to the Si (100) substrate.

Growth and Characterization of Epitaxial Al1−xInxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
M. J. Lukitsch ◽  
G. W. Auner ◽  
R. Naik ◽  
V. M. Naik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Alloy Segregation

ABSTRACTEpitaxial Al1−xInxN films (thickness ∼150 nm) with 0 ≤ × ≤ 1 have been grown by Plasma Source Molecular Beam Epitaxy on Sapphire (0001) at a low substrate temperature of 375°C and were characterized by reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), and atomic force microscopy (AFM). Both RHEED and XRD measurements confirm the c-plane growth of Al1-xInxN films on sapphire (0001) with the following epitaxial relations: Nitride [0001] ∥ Sapphire [0001] and Nitride < 0110 > ∥ Sapphire <2110>. The films do not show any alloy segregation. However, the degree of crystalline mosaicity and the compositional fluctuation increases with increasing In concentration. Further, AFM measurements show an increased surface roughness with increasing In concentration in the alloy films.

Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy

MRS Advances ◽  
2017 ◽  
Vol 2 (3) ◽  
pp. 189-194
Author(s):  
Franck Natali ◽  
Joe Trodahl ◽  
Stéphane Vézian ◽  
Antoine Traverson ◽  
Benjamin Damilano ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
Doped Semiconductors ◽  
X Ray ◽  
Resistivity Measurements

ABSTRACTGdN/SmN based superlattices have been grown by molecular beam epitaxy. In-situ reflection high energy electron diffraction was used to evaluate the evolution of the epitaxial growth and the structural properties were assessed by ex-situ X-ray diffraction. Hall Effect and resistivity measurements as a function of the temperature establish that the superlattices are heavily n-type doped semiconductors and the electrical conduction resides in both REN layers, SmN and GdN.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 2, No. 3B) ◽  
pp. L366-L369 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Shigeo Yamaguchi ◽  
Hitoshi Kurusu ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Diffraction Intensity

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

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