X-Ray Diffraction Studies of Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
G. Kowaljki ◽  
M. Leszcjynski ◽  
A. Kurpiewski ◽  
M. Kaminska ◽  
T. Suski ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Lattice Relaxation ◽  
Light Illumination ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Large Lattice ◽  
Low Temperature Gaas ◽  
Substrate Temperatures

ABSTRACTGaAs layers grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) were studied in a novel purpose designed X-ray experiment. It combines X-ray double crystal rocking curve measurements with some elements usually found in optical setups like light illumination at liquid nitrogen temperatures applied to transfer EL2 type defects into metastable state. Ability to record such transfers with the X-ray experiment as well as large lattice relaxation accompanying this process is presented.

TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE

1999 ◽  
Vol 595 ◽  
Author(s):  
W.L. Sarney ◽  
L. Salamanca-Riba ◽  
V. Ramachandran ◽  
R.M Feenstra ◽  
D.W. Greve
Keyword(s):  
Low Temperatures ◽  
Stacking Faults ◽  
Full Width ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
Tem Analysis ◽  
Rocking Curve ◽  
X Ray ◽  
Substrate Temperatures

AbstractGaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films' features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.

scholarly journals TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE

2000 ◽  
Vol 5 (S1) ◽  
pp. 238-244
Author(s):  
W.L. Sarney ◽  
L. Salamanca-Riba ◽  
V. Ramachandran ◽  
R.M Feenstra ◽  
D.W. Greve
Keyword(s):  
Low Temperatures ◽  
Stacking Faults ◽  
Full Width ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
Tem Analysis ◽  
Rocking Curve ◽  
X Ray ◽  
Substrate Temperatures

GaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films’ features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.

InP Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperature

1991 ◽  
Vol 241 ◽  
Author(s):  
K. Xie ◽  
C. R. Wie ◽  
G. W. Wicks
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Double Crystal ◽  
X Ray ◽  
Hall Effect Measurements ◽  
Phosphorus Source ◽  
Substrate Temperatures

ABSTRACTInP layers were grown on semi-insulating InP wafer by molecular beam epitaxy (MBE) at low substrate temperatures (<200° C), using solid phosphorus source. We use x-ray diffraction, double crystal x-ray rocking curve, Auger electron spectroscopy, and temperature-dependent Van der Pauw and Hall effect measurements to characterize the as-grown and annealed InP layers. It is found that the InP layer is in poly-crystal state with excess P over 7 at%. The layers became single crystal after annealing above 400°C. The resistivity of the InP layer decreased from 60 Ωcm for an as-grown sample to 0.82 Ωcm after 400°C RTA annealing. The different role of excess P as compared to the role played by excess As in LT-GaAs is discussed based on the P properties.

Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy

1995 ◽  
Vol 399 ◽  
Author(s):  
C.S. Kim ◽  
S.K. Noh ◽  
H.J. Lee ◽  
Y.K. Cho ◽  
Y.I. Kim ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Rotation Angle ◽  
Lattice Relaxation ◽  
High Dislocation Density ◽  
Sinusoidal Oscillation ◽  
Double Crystal ◽  
X Ray ◽  
Anisotropic Lattice

ABSTRACTWe have investigated anisotropic lattice relaxation and its mechanism of ZnSe epitaxial layer grown on (001) GaAs substrate by MBE. Double-crystal X-ray rocking curves for (004), {115} and {404} reflections were measured as a function of the azimuthal rotation angle of the sample. We observed the sinusoidal oscillation of the FWHM of the epilayer peak for (004) reflections due to the asymmetric dislocation density along two orthogonal <110> directions, and the direction of the maximum FWHM corresponding to high dislocation density is along [110]. In addition, the strain along [110] is smaller than that along [1-10], indicating that the layer suffered anisotropic lattice relaxation. The direction of larger relaxation([l-10]) is not consistent with that of high dislocation density([110]). The results suggest that the asymmetry in dislocation density is not responsible for the anisotropic relaxation of the ZnSe epilayer.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

High Resolution Digital X-Ray Rocking Curve Topography

1986 ◽  
Vol 30 ◽  
pp. 527-535 ◽  
Author(s):  
T.S. Ananthanarayanan ◽  
W.E. Mayo ◽  
R.G. Rosemeier
Keyword(s):  
Defect Structure ◽  
Semiconductor Device ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
Crystalline Materials ◽  
Digital Implementation ◽  
X Ray ◽  
Rapid Characterization ◽  
Non Destructive

AbstractThis study presents a unique and novel enhancement of the double crystal diffractometer which allows topographic mapping of X-ray diffraction rocking curve half widths at about 100-150μm spatial resolution. This technique can be very effectively utilized to map micro-lattice strain fields in crystalline materials. The current focus will be on the application of a recently developed digital implementation for the rapid characterization of defect structure and distribution in various semiconductor materials.Digital Automated Rocking Curve (DARC) topography has been successfully applied for characterizing defect structure in materials such as: GaAs, Si, AlGaAs, HgMnTe, HgCdTe, CdTe, Al, Inconnel, Steels, BaF2 PbS, PbSe, etc. The non-intrusive (non- contact & non-destructive) nature of the DARC technique allows its use in studing several phenomena such as corrosion fatigue, recrystallization, grain growth, etc., in situ. DARC topography has been used for isolating regions of non-uniform dislocation density on various materials. It is envisioned that this highly sophisticated, yet simple to operate, system will improve semiconductor-device yield significantly.The high strain sensitivity of the technique results from combination of the highly monochromated and collimated X-ray probe beani, the State of the art linear position-sensitive detector (LPSD) and the high-precision specimen goniometer.

Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP

1994 ◽  
Vol 340 ◽  
Author(s):  
Z. C. Feng ◽  
S. J. Chua ◽  
A. Raman ◽  
N.N. Lim
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Molecular Beam ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Comprehensive Characterization

ABSTRACTA variety of Inl-xGaxAs, Inl-yAlyAs and Inl-x-yGaxAlyAs films have been grown on InP by molecular beam epitaxy. A comprehensive characterization was performed using Raman scattering, photoluminescence (PL), Fourier transform infrared (FTIR) spectroscopy and double crystal X-ray diffraction on these ternary and quaternary heterostructures with different compositions and growth conditions. The lattice matched and mismatched structures are studied. Our analyses show that the interface mismatch exerts an important influence on the optical properties of these heterostructures, and conversely that Raman, PL and FTIR can be used to probe the interface mismatch nondestructively.

Defect Model and Growth Characteristics of Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
M. Fatemi ◽  
B. Tadayon ◽  
H. B. Dietrich ◽  
S. Tadayon
Keyword(s):  
Low Temperature ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Temperature Growth ◽  
X Ray ◽  
Random Behavior ◽  
Antisite Defects ◽  
Low Temperature Gaas ◽  
Lattice Matched

ABSTRACTLow-temperature GaAs layers (LTGaAs) grown by molecular beam epitaxy on GaAs substrates have been characterized by x-ray diffraction techniques. X-ray rocking curve measurements on more than 200 anneal conditions show that through appropriate choice of growth condition, layers with different states of strain are obtained. Three distinct ranges of low temperature growth are defined, labelled as “low-range,” “mid-range,” and “high-range,” corresponding to growth temperatures less than 260 °C, between 260 and 450 °C, and more than 450 °C, respectively. 0.5μm thick films grown in the low-range are amorphous, whereas those in the mid-range are fully strained and lattice-matched to the substrate, and those grown above 450 °C are indistinguishable from ordinary GaAs. Notable properties of mid-range layers are the random behavior of the as-grown strain, and the expansion and contraction of the lattice parameter with thermal anneals up to 900 °C. A growth model for LTGaAs based on arsenic antisite defects is proposed.

Thickness Measurement of Epitaxical Thin Films by X-ray Diffraction Method

1988 ◽  
Vol 32 ◽  
pp. 279-284
Author(s):  
J. Chaudhuri ◽  
S. Shah ◽  
J.P. Harbison
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Electronic Materials ◽  
Diffraction Method ◽  
Thickness Measurement ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Kinematical Theory ◽  
Double Crystal Diffractometer

AbstractA method was described for determining the thickness of epitaxical thin films common to electronic materials. The equations were developed based on the kinematical theory of X-ray diffraction and effects of both primary and secondary extinctions were considered. As an example of the applications of this method, thickness measurement of AlGaAs thin films on GaAs was demonstrated. These films were grown by molecular beam epitaxy. The integrated reflected intensities from the film and the substrate were obtained by the X-ray double crystal diffractometer. An excellent agreement was obtained between the results from X-ray measurements and RHEED oscillation data.

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