Nitride Based High Power Devices: Transport Properties, Linear Defects And Goals

1998 ◽  
Vol 512 ◽  
Author(s):  
Z. Z. Bandić ◽  
P. M. Bridger ◽  
E. C. Piquette ◽  
R. A. Beach ◽  
V. M. Phanse ◽  
...  
Keyword(s):  
Transport Properties ◽  
Critical Field ◽  
High Power ◽  
Minority Carrier Lifetime ◽  
Electric Breakdown ◽  
Power Devices ◽  
Critical Fields ◽  
Linear Defects ◽  
Bandgap Semiconductors ◽  
Recombination Lifetimes

ABSTRACTThe wide bandgap semiconductors GaN and AlGaN show promise for high voltage standoff layers in high power devices such as GaN Schottky rectifiers and GaN/AlGaN thyristorlike switches. The material properties which significantly influence the device design and performance are electron and hole diffusion lengths, recombination lifetimes and the critical field for electric breakdown. We have fabricated high standoff voltage (> 450 V) GaN Schot-tky rectifiers, and measured a lower limit for the critical field for electric breakdown to be (2 ± 0.5) · 106 V/cm. Diffusion lengths and recombination lifetimes were measured by electron beam induced current on unintentionally doped, n and p-type GaN samples grown by various epitaxial techniques. To establish the possible effects of linear dislocations and other defects on the transport and breakdown properties, the same sample surfaces were analyzed by AFM. On some of the samples, our measurements indicate that the dislocations appear to be electrically active and that recombination at dislocations occupying grain boundaries limit the minority carrier lifetime to the nanosecond range. Based on the measurements of transport properties, critical fields and the modeling of the devices proposed, our estimates indicate that DARPA/EPRI goals for megawatt electronics set at 5 kV standoff voltage and 200 A on-state current might be achieved with 15 – 20 μm thick layers grown by HVPE, at approximately 1. 1016 cm−3 doping levels, and 1 – 2cm2 device active area.

Temperature Dependence of Breakdown Field in p-π-n GaN Diodes

1998 ◽  
Vol 512 ◽  
Author(s):  
A. Osinsky ◽  
M. S. Shur ◽  
R. Gaska
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Elevated Temperatures ◽  
Electric Breakdown ◽  
Breakdown Field ◽  
Power Devices ◽  
Avalanche Photodetectors

ABSTRACTWe present the results of the study of the electric breakdown in p-π-n GaN diodes. The breakdown is observed at reverse biases above 40 V and is accompanied by the formation of microplasmas. The study shows that the observed breakdown field in GaN (on the order of 1 to 2 MV/cm) increases with the temperature. This feature makes GaN very promising for high power devices and avalanche photodetectors, operating at elevated temperatures.

Optimization Study of a Silicon-Carbide Micro-Capillary Pumped Loop

2003 ◽  
Author(s):  
Laura J. Meyer ◽  
Leslie M. Phinney
Keyword(s):  
Thermal Management ◽  
High Power ◽  
Electronic Devices ◽  
Maximum Size ◽  
Power Electronic ◽  
Power Devices ◽  
Pressure Balance ◽  
Capillary Pumped Loop ◽  
Two Phase ◽  
Bandgap Semiconductors

Wide bandgap semiconductors such as SiC and GaN are materials that are advantageous for high power electronic devices. High power devices generate large amounts of energy that must be removed, and traditional cooling methods are insufficient for maintaining the desired operating temperatures. Thus, thermal management methods for high power electronic devices need to be developed. A SiC micro-capillary pumped loop thermal management system is being evaluated to cool SiC high power devices. Mathematical models incorporating two-phase flow and capillary wicking have been developed to analyze capillary pumped loops or loop heat pipes. This investigation uses a model based on the methodology of Dickey and Peterson (1994). The model takes an energy balance on the condenser and evaporator regions, as well as a pressure balance across the meniscus. A parametric study has been performed on the micro-CPL to determine the best design for a p-i-n diode that is less than 1 cm square and which produces a heat flux at the junction of over 300 W/cm2. The micro-CPL will be limited to a maximum size of 6.5 cm2. The liquid and vapor line lengths, number of grooves, and groove dimensions are varied to determine optimal values. The results and trends of the optimization calculations are discussed.

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

2011 ◽  
Vol 324 ◽  
pp. 46-51 ◽  
Author(s):  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Herve Morel ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Power ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Power Devices ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Bandgap Materials ◽  
Temperature Applications

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.

Design And Fabrication Of Nitride Based High Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
Z. Z. Bandić ◽  
E.C. Piquette ◽  
P.M. Bridger ◽  
T.F. Kuech ◽  
T. C. Mcgill
Keyword(s):  
Critical Field ◽  
High Power ◽  
Minority Carrier ◽  
Planar Geometry ◽  
Model Parameters ◽  
Recombination Lifetime ◽  
Thyristor Switch ◽  
And Performance ◽  
Schottky Devices ◽  
Recombination Lifetimes

AbstractWe modeled the breakdown voltage, critical current density and maximum operating frequency of several GaN and GaN/AlN based high power and high temperature electronic devices. Important model parameters which influence device design and performance are minority carrier recombination lifetime and critical field for electric breakdown.GaN Schottky devices have been fabricated in the planar geometry. Current-voltage measurements indicated the importance of the vertical geometry for achieving large breakdown voltages. The minority carrier (hole) recombination lifetimes have been measured by electron beam induced currents (EBIC). The measured hole lifetime of 7 ns and estimate for the critical field indicate the possibility of GaN/AlGaN thyristor switch devices operating at 5KV with current densities approximately equal to 200 A/cm2 and at frequencies above 2MHz.The GaN structural and optical materials quality and processing requirement for etching is discussed.

Thick Epilayer for Power Devices

2007 ◽  
Vol 556-557 ◽  
pp. 47-52 ◽  
Author(s):  
Anne Henry ◽  
Jawad ul Hassan ◽  
Henrik Pedersen ◽  
Franziska Christine Beyer ◽  
Peder Bergman ◽  
...  
Keyword(s):  
Optical Microscopy ◽  
High Voltage ◽  
High Power ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Thick Layer ◽  
Minority Carrier Lifetime ◽  
Growth Conditions ◽  
Power Devices ◽  
Substrate Quality

Growth of thick epitaxial SiC layers needed for high power devices is presented for horizontal hot-wall CVD (HWCVD) reactors. We demonstrate thickness of epilayer of 100 μm and more with good morphology, low-doping with no doping variation through the whole thick layer and reasonable carrier lifetime which mainly depends on the substrate quality. Typical epidefects are described and their density can dramatically be reduced when choosing correctly the growth conditions as well as the polishing of the surface prior to the growth. The control of the doping and thickness uniformities as well as the run-to-run reproducibility is also presented. Various characterization techniques such as optical microscopy, AFM, reflectance, CV, PL and minority carrier lifetime have been used. Results of high-voltage SiC Schottky power devices are presented.

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

2017 ◽  
Vol 64 (3) ◽  
pp. 856-873 ◽  
Author(s):  
T. Paul Chow ◽  
Ichiro Omura ◽  
Masataka Higashiwaki ◽  
Hiroshi Kawarada ◽  
Vipindas Pala
Keyword(s):  
Power Devices ◽  
Smart Power ◽  
Bandgap Semiconductors
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