Temperature Dependence of Breakdown Field in p-π-n GaN Diodes

1998 ◽  
Vol 512 ◽  
Author(s):  
A. Osinsky ◽  
M. S. Shur ◽  
R. Gaska
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Elevated Temperatures ◽  
Electric Breakdown ◽  
Breakdown Field ◽  
Power Devices ◽  
Avalanche Photodetectors

ABSTRACTWe present the results of the study of the electric breakdown in p-π-n GaN diodes. The breakdown is observed at reverse biases above 40 V and is accompanied by the formation of microplasmas. The study shows that the observed breakdown field in GaN (on the order of 1 to 2 MV/cm) increases with the temperature. This feature makes GaN very promising for high power devices and avalanche photodetectors, operating at elevated temperatures.

Nitride Based High Power Devices: Transport Properties, Linear Defects And Goals

1998 ◽  
Vol 512 ◽  
Author(s):  
Z. Z. Bandić ◽  
P. M. Bridger ◽  
E. C. Piquette ◽  
R. A. Beach ◽  
V. M. Phanse ◽  
...  
Keyword(s):  
Transport Properties ◽  
Critical Field ◽  
High Power ◽  
Minority Carrier Lifetime ◽  
Electric Breakdown ◽  
Power Devices ◽  
Critical Fields ◽  
Linear Defects ◽  
Bandgap Semiconductors ◽  
Recombination Lifetimes

ABSTRACTThe wide bandgap semiconductors GaN and AlGaN show promise for high voltage standoff layers in high power devices such as GaN Schottky rectifiers and GaN/AlGaN thyristorlike switches. The material properties which significantly influence the device design and performance are electron and hole diffusion lengths, recombination lifetimes and the critical field for electric breakdown. We have fabricated high standoff voltage (> 450 V) GaN Schot-tky rectifiers, and measured a lower limit for the critical field for electric breakdown to be (2 ± 0.5) · 106 V/cm. Diffusion lengths and recombination lifetimes were measured by electron beam induced current on unintentionally doped, n and p-type GaN samples grown by various epitaxial techniques. To establish the possible effects of linear dislocations and other defects on the transport and breakdown properties, the same sample surfaces were analyzed by AFM. On some of the samples, our measurements indicate that the dislocations appear to be electrically active and that recombination at dislocations occupying grain boundaries limit the minority carrier lifetime to the nanosecond range. Based on the measurements of transport properties, critical fields and the modeling of the devices proposed, our estimates indicate that DARPA/EPRI goals for megawatt electronics set at 5 kV standoff voltage and 200 A on-state current might be achieved with 15 – 20 μm thick layers grown by HVPE, at approximately 1. 1016 cm−3 doping levels, and 1 – 2cm2 device active area.

Silicon carbide high-power devices

1996 ◽  
Vol 43 (10) ◽  
pp. 1732-1741 ◽  
Author(s):  
C.E. Weitzel ◽  
J.W. Palmour ◽  
C.H. Carter ◽  
K. Moore ◽  
K.K. Nordquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Power Devices

A compact TM01 mode combiner for phase locked high power devices

2015 ◽  
Author(s):  
Jiawei Li ◽  
Wenhua Huang ◽  
Renzhen Xiao ◽  
Yuchuan Zhang ◽  
Tiezhu Liang ◽  
...  
Keyword(s):  
High Power ◽  
Power Devices

scholarly journals Temperature Dependence of Mechanical, Electrical Properties and Crystal Structure of Polyethylene Blends for Cable Insulation

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1922 ◽  
Author(s):  
Lunzhi Li ◽  
Lisheng Zhong ◽  
Kai Zhang ◽  
Jinghui Gao ◽  
Man Xu
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Temperature Dependence ◽  
Elevated Temperatures ◽  
Breakdown Strength ◽  
Temperature Stability ◽  
Xrd Analysis ◽  
Insulation Material ◽  
Cable Insulation ◽  
Polyethylene Blends

There is a long-standing puzzle concerning whether polyethylene blends are a suitable substitution for cable-insulation-used crosslinking polyethylene (XLPE) especially at elevated temperatures. In this paper, we investigate temperature dependence of mechanical, electrical properties of blends with 70 wt % linear low density polyethylene (LLDPE) and 30 wt % high density polyethylene (HDPE) (abbreviated as 70 L-30 H). Our results show that the dielectric loss of 70 L-30 H is about an order of magnitude lower than XLPE, and the AC breakdown strength is 22% higher than XLPE at 90 °C. Moreover, the dynamic mechanical thermal analysis (DMA) measurement and hot set tests suggest that the blends shows optimal mechanical properties especially at high temperature with considerable temperature stability. Further scanning electron microscope (SEM) observation and X-ray diffraction (XRD) analysis uncover the reason for the excellent high temperature performance and temperature stability, which can be ascribed to the uniform fine-spherulite structure in 70 L-30 H blends with high crystallinity sustaining at high temperature. Therefore, our findings may enable the potential application of the blends as cable insulation material with higher thermal-endurance ability.

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