Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

2017 ◽  
Vol 64 (3) ◽  
pp. 856-873 ◽  
Author(s):  
T. Paul Chow ◽  
Ichiro Omura ◽  
Masataka Higashiwaki ◽  
Hiroshi Kawarada ◽  
Vipindas Pala
Keyword(s):  
Power Devices ◽  
Smart Power ◽  
Bandgap Semiconductors

SiC and GaN High-Voltage Power Devices

2000 ◽  
Vol 622 ◽  
Author(s):  
T.P. Chow
Keyword(s):  
High Voltage ◽  
Wide Bandgap ◽  
Power Devices ◽  
Experimental Performance ◽  
Material Parameters ◽  
Device Development ◽  
Device Structures ◽  
Similarities And Differences ◽  
Bandgap Semiconductors ◽  
Ionization Coefficients

ABSTRACTThe present status of development of SiC and GaN devices for high-voltage power electronics applications is reviewed. Device structures that are particularly applicable to these two wide bandgap semiconductors are considered and compared to those commonly used in silicon. The simulated and experimental performance of two-terminal rectifiers and three- terminal transistors and thyristors are compared. The effects of material parameters (mobility, ionization coefficients, lifetimes) and defects on device characteristics are pointed out. Similarities and differences between electronic and photonic device development in these semiconductors are discussed.

Electro-Thermal Design of Smart Power Devices and Integrated Circuits

2014 ◽  
Vol 918 ◽  
pp. 191-194 ◽  
Author(s):  
Konstantin O. Petrosyants ◽  
Igor A. Kharitonov ◽  
Nikita I. Ryabov
Keyword(s):  
Integrated Circuits ◽  
High Power ◽  
Temperature Sensors ◽  
Thermal Design ◽  
Analysis Tool ◽  
Power Devices ◽  
Smart Power ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Combined Use

An efficient methodology of electro-thermal design of smart power semiconductor devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for 2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and high power elements, temperature sensors, IC chips simulation are considered.

Reliability study of thermal cycling stress on smart power devices

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EP12 ◽  
Author(s):  
Ming Zhang ◽  
Yasuki Yoshihisa ◽  
Keiichi Furuya ◽  
Yukari Imai ◽  
Kenichi Hatasako ◽  
...  
Keyword(s):  
Thermal Cycling ◽  
Power Devices ◽  
Reliability Study ◽  
Smart Power

Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique

2019 ◽  
Vol 963 ◽  
pp. 189-193 ◽  
Author(s):  
Alexander Savtchouk ◽  
Marshall Wilson ◽  
Carlos Almeida ◽  
Dmitriy Marinskiy ◽  
Robert Hillard ◽  
...  
Keyword(s):  
Direct Method ◽  
Wide Bandgap ◽  
Power Devices ◽  
Electrical Parameters ◽  
Interface Characterization ◽  
Surface And Interface ◽  
Self Consistent ◽  
Flatband Voltage ◽  
Bandgap Semiconductors ◽  
Consistent Measurement

The non-contact C-V technique has been recently gaining interest as a precise, cost and time effective metrology for wide-bandgap semiconductors. Originally focused on dopant measurement, non-contact C-V has been expanding to encompass wide-bandgap surface and interface characterization, including complex reliability issues critical for the future of power devices. In this work, we report progress achieved using a new direct method for determining the flatband voltage, VFB, and capacitance, CFB. Experimental results are presented for n-type oxidized epitaxial 4-H SiC. They demonstrate the approach and the unique self-consistent measurement producing an entire set of pertinent electrical parameters, including the interface trap density, Dit.

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