Silicon carbide high-power devices

1996 ◽  
Vol 43 (10) ◽  
pp. 1732-1741 ◽  
Author(s):  
C.E. Weitzel ◽  
J.W. Palmour ◽  
C.H. Carter ◽  
K. Moore ◽  
K.K. Nordquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Power Devices

scholarly journals Silicon carbide power device characteristics, applications and challenges: an overview

2020 ◽  
Vol 11 (4) ◽  
pp. 2194
Author(s):  
Muhamad Faizal Yaakub ◽  
Mohd Amran Mohd Radzi ◽  
Faridah Hanim Mohd Noh ◽  
Maaspaliza Azri
Keyword(s):  
Silicon Carbide ◽  
System Design ◽  
Power Electronics ◽  
Power Density ◽  
High Power ◽  
System Performance ◽  
Power Device ◽  
Power Devices ◽  
Performance Limitation ◽  
Design Challenges

Silicon (Si) based power devices have been employed in most high power applications since decades ago. However, nowadays, most major applications demand higher efficiency and power density due to various reasons. The previously well-known Si devices, unfortunately, have reached their performance limitation to cover all those requirements. Therefore, Silicon Carbide (SiC) with its unique and astonishing characteristic has gained huge attention, particularly in the power electronics field. Comparing both, SiC presents a remarkable ability to enhance overall system performance and the transition from Si to SiC is crucial. With regard to its importance, this paper provides an overview of the characteristics, advantages, and outstanding capabilities in various application for SiC devices. Furthermore, it is also important to disclose the system design challenges, which are discussed at the end of the paper.

SiC Bipolar Power Devices

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 299-304 ◽  
Author(s):  
T. Paul Chow
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
High Voltage ◽  
High Power ◽  
Recent Progress ◽  
Future Trends ◽  
Market Demand ◽  
Power Devices ◽  
Power Switching ◽  
Schottky Rectifiers

AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

1998 ◽  
Vol 512 ◽  
Author(s):  
S. Rendakova ◽  
N. Kuznetsov ◽  
N. Savkina ◽  
M. Rastegaeva ◽  
A. Andreev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Small Area ◽  
Defect Density ◽  
Schottky Barriers ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Large Area ◽  
Vacuum Sublimation ◽  
Sublimation Method

ABSTRACTThe characteristics of SiC high-power devices are currently limited by the small area of the devices, which is usually less than 1 sq. mm. In order to increase device area, defect density in SiC epitaxial structures must be reduced. In this paper, we describe properties of silicon carbide epitaxial layers grown on 4H-SiC wafers with reduced micropipe density. These layers were grown by the vacuum sublimation method. Large area Schottky barriers (up to 8 mm2) were fabricated on SiC epitaxial layers and characterized.

4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

1997 ◽  
Vol 483 ◽  
Author(s):  
J. B. Casady ◽  
A. K. Agarwal ◽  
L. B. Rowland ◽  
S. Seshadri ◽  
R. R. Siergiej ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Semiconductor Material ◽  
Power Electronic ◽  
Power Devices ◽  
Switching Device ◽  
Electronic Switching ◽  
Device Structures ◽  
Near Term

AbstractSilicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an overview of SiC power devices and concludes that MOS Turn-Off Thyristor (MTOTM) is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double sided attachment need to be developed along with the SiC power devices.

Characteristics and Applications of Silicon Carbide Power Devices in Power Electronics

2010 ◽  
Vol 56 (3) ◽  
pp. 231-236 ◽  
Author(s):  
Nisha Kondrath ◽  
Marian Kazimierczuk
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Mechanical Strength ◽  
Power Electronics ◽  
High Temperatures ◽  
High Power ◽  
Power Devices ◽  
Paper Properties ◽  
High Mechanical Strength ◽  
Chemical Inertness

Characteristics and Applications of Silicon Carbide Power Devices in Power ElectronicsSilicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to operate at high temperatures, and extreme chemical inertness to most of the electrolytes, are very attractive for high-power applications. In this paper, properties, advantages, and limitations of SiC and conventional Si materials are compared. Various applications, where SiC power devices are attractive, are discussed.

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