Integration Studies of Plasma Deposited Fluorinated Amorphous Carbon

1998 ◽  
Vol 511 ◽  
Author(s):  
Thomas W. Mountsier ◽  
John A. Samuels ◽  
Richard S. Swope
Keyword(s):  
Weight Loss ◽  
Amorphous Carbon ◽  
Inductively Coupled Plasma ◽  
Silicon Oxide ◽  
Dielectric Constants ◽  
Materials Testing ◽  
Good Thermal Stability ◽  
Inductively Coupled ◽  
Low Dielectric ◽  
Materials Used

ABSTRACTRecently, we reported the deposition of fluorinated amorphous carbon (FlAC) from hexafluorobenzene (C6F6) under parallel plate (PP) and inductively coupled plasma (ICP-HDP) conditions. Based on initial materials testing, these two platforms generated comparable materials with low dielectric constants (2.4 – 2.8), low weight loss/shrinkage (< 1.5 %/hr. at 425° C), hardness (2–3 Gpa) and adhesion (4–9 kpsi). Here we attempt to answer a basic integration question: FIAC compatibility with other materials used in the interconnect scheme. Investigations of adhesion of F1AC to, and capped by, silicon oxide, silicon nitride and various metals shows generally greater stability of the ICP generated material vs. PP-FIAC. Failures appeared to occur primarily at the FIAC/film interface at 400 and 300 °C for ICP and PP respectively. Although thickness-loss and weight-loss measurements indicate good thermal stability, TDS spectra show low-level outgassing of fluorine-based molecules and fragments even in samples annealed for 4 hours at 400 °C, resulting in interface failures. Plasma treatments and anneals of the F1AC were found to have a minimal effect but liner/cap composition and processing has a strong influence on the adhesion of other films to the fluorocarbon.

Evaluation of the nanodebris produced by in vitro degradation of titanium-based dental implants in the presence of bacteria using single particle and single cell inductively coupled plasma mass spectrometry.

2021 ◽  
Author(s):  
Marzia Cosmi ◽  
Nathaly Gonzalez-Quiñonez ◽  
Pablo Tejerina Díaz ◽  
Ángel Manteca ◽  
Elisa Blanco González ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Dental Implants ◽  
Inductively Coupled Plasma ◽  
Metallic Materials ◽  
In Vitro Degradation ◽  
Inductively Coupled ◽  
Oral Environment ◽  
Plasma Mass Spectrometry ◽  
Materials Used

The bio-tribocorrosion of metallic materials used for dental implants (Ti and alloys) in the oral environment involves the production of metallic debris in the ionic, but also in the nanoparticulated...

Deposition of Fluorinated Amorphous Carbon Thin Films with Low Dielectric Constant and Thermal Stability

2000 ◽  
Vol 612 ◽  
Author(s):  
Sang-Soo Han ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Stable Condition ◽  
Flow Rate Ratio ◽  
Low Dielectric Constant ◽  
Low Dielectric

AbstractFluorinated amorphous carbon (a-C:F) thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) with increasing CF4:CH4 gas flow rate ratio, and then annealed with increasing annealing temperature (100, 200, 300, and 400.). We have found the reduction mechanism of the dielectric constant and the thermally stable condition for the a-C:F films. On the basis of the results, the optimal condition to satisfy both the low dielectric constant and the thermal stability is followed as; the a-C:F films have to have the compatible F content to make a compromise between the two properties; the C-Fx bonding configuration has to exist as a form of C-F2 & C-F3 instead of C-F; The films should be somewhat cross-linked structure.

Diamond-like amorphous carbon layer film by an inductively coupled plasma system for next generation etching hard mask

2018 ◽  
Vol 663 ◽  
pp. 21-24 ◽  
Author(s):  
Se Jun Park ◽  
Dohyung Kim ◽  
Seungmoo Lee ◽  
Yongjoon Ha ◽  
Mingyoo Lim ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Inductively Coupled Plasma ◽  
Carbon Layer ◽  
Next Generation ◽  
Plasma System ◽  
Layer Film ◽  
Hard Mask ◽  
Inductively Coupled ◽  
Amorphous Carbon Layer

scholarly journals Determination of 27 Elements in Animal Feed by Inductively Coupled Plasma-Mass Spectrometry

2019 ◽  
Vol 102 (2) ◽  
pp. 434-444 ◽  
Author(s):  
Thomas King ◽  
Robert Sheridan
Keyword(s):  
Inductively Coupled Plasma ◽  
Animal Feed ◽  
Certified Reference Materials ◽  
Microwave Digestion ◽  
Animal Health ◽  
Essential Elements ◽  
Inductively Coupled ◽  
Z Scores ◽  
Materials Used ◽  
Accuracy And Repeatability

Abstract A method was developed to determine 27 elements (aluminum, arsenic, boron, cadmium, calcium, chromium, cobalt, copper, iron, lead, magnesium, manganese, mercury, molybdenum, nickel, phosphorus, potassium, selenium, sodium, sulfur, vanadium, zinc, antimony, uranium, beryllium, thallium, and thorium) in animal feeds and pet foods using closed vessel microwave digestion and inductively coupled plasma-massspectrometry. These elements can adversely affect animal health when amounts become excessive or deficient in food. For potentially toxic elements, the target LOQ was determined to be 1/10 the lowest maximum tolerable level (MTL) for the most sensitive animal species. For nutritionally essential elements,the target LOQ was determined to be 1/10 the concentration that would be considered deficient in feed if that level is lower than 1/10 the lowest MTL. The targeted high end of the quantitation range wasselected as twice the highest MTL. A single-laboratory validation (SLV) was performed to determine theaccuracy and precision of the method, and the resultswere evaluated with respect to predetermined performance characteristics. The test materials used in the SLV included two National Institute of Standardsand Technology certified reference materials, two Association of American Feed Control Officials (AAFCO) check samples, and one in-house previously analyzed feed sample. The concentrations of each elementdetermined were the result of spiked analyte,incurred analyte, or a combination of spiked and incurredanalyte. All samples were analyzed seven times on different days at 2 × LOQ and at the midrangeconcentration. For most data, the results of the SLV met or exceeded the criteria for accuracy and repeatability. For accuracy, K at the midrange level had a mean recovery of 95%, which is just below the low preferred accuracy threshold of 97%. For repeatability, all the 2 × LOQ CVr values were below the preferred values. Be, Cr, Ni, Na,Mn, and S all had midrange CVr values exceeding the preferred values. Be had the highest midrange CVr value of 9.93. Eight AAFCO check samples were also analyzed to determine the method’s accuracy and repeatability for elements at the manufacturer’s claimed levels. For accuracy, all results had z-scores &lt;1.5. For repeatability, three CVr values from two AAFCO check samples were greater than the preferred limits.

Poly(aryl ether ketone/sulfone)s containing ortho-methyl and pendant trifluoromethyl-substituted phenyl groups: Synthesis and properties

2012 ◽  
Vol 24 (8) ◽  
pp. 692-701 ◽  
Author(s):  
Chengyuan Shang ◽  
Xiaojuan Zhao ◽  
Junwei Li ◽  
Jingang Liu ◽  
Wei Huang
Keyword(s):  
Dielectric Constants ◽  
Polymer Chains ◽  
Light Transmittance ◽  
Cutoff Wavelength ◽  
Aryl Ether ◽  
Good Thermal Stability ◽  
Low Dielectric ◽  
Aryl Ether Ketone ◽  
Ether Ketone ◽  
Good Transparency

Two novel bisphenols, 1,1-bis(4′-hydroxy-3′,5′-dimethylphenyl)-1-(3′′-trifluoromethylphenyl)-2,2,2-trifluoroethane (4M6FDO) and 1,1-bis(4′-hydroxy-3′,5′-dimethylphenyl)-1-[3′′,5′′-bis(trifluoromethyl)phenyl]-2,2,2-trifluoroethane (4M9FDO), with methyl groups ortho-substituted to the phenol groups, bulky trifluoromethyl-substituted phenyl groups and trifluoromethyl groups in the structure, were synthesized and characterized. The bisphenols were polymerized with 4,4′-difluorobenzophenone and bis(4-fluorophenyl) sulfone, respectively, via a aromatic nucleophilic substitution polycondensation to afford four poly(aryl ether ketone/sulfone)s (PAEKs/PAESs) with the inherent viscosities of 0.32–0.52 dL g−1. The ortho-methyl and pendant trifluoromethyl-substituted phenyl groups endow the polymers with good solubility, the rigidity of the polymer chains increase the glass transition ( Tg) of the polymers to 197–235 °C. Flexible and tough films cast from N,N-dimethylacetamide showed good thermal stability, low dielectric constants of 2.67–2.73 and low water uptakes of 0.21–0.40%. Moreover, the polymers showed good transparency with light transmittance at 450 nm as high as 96% and cutoff wavelength as low as 285 nm. The PAEKs also exhibited low light-absorption at the optocommunication wavelengths of 1310 and 1550 nm.

Fabrication and Characterization of Cu-Plated Fine Pitch Patterns on Flexible Polyimide

2013 ◽  
Vol 284-287 ◽  
pp. 118-122 ◽  
Author(s):  
Ying Chih Wu ◽  
Yu Jung Huang ◽  
Ming Kun Chen ◽  
Yi Lung Lin ◽  
Ling Sheng Jang
Keyword(s):  
Film Surface ◽  
Dielectric Constants ◽  
Process Window ◽  
Good Thermal Stability ◽  
Low Dielectric ◽  
Microelectronic Devices ◽  
Fine Pitch ◽  
Cu Film ◽  
High Flexibility

The thin flexible Polyimides (PI) films have desirable properties for use in the electrical and electronics industry because their good thermal stability, high flexibility, low dielectric constants, excellent mechanical strength, low loss tangent, low relative permittivity and electrical insulating properties. In order to determine the process window of the surface metallization of PI, the fine traces with 50 micron pitch (25micron line /space) built on a flexible 50 micron thick PI film using wet fabrication process are reported in this paper. The thick copper (Cu) film was obtained from the Cu plating process using evaporated thin film of Cu as the adhesion layer. The fabricated fanout fine patterns are further investigated using scanning electron microscope (SEM), energy-dispersive spectrometry (EDS) and X-ray spectrometry technologies. The experiment is conducted to study the effect of the process parameters on the Cu film surface properties. The results obtained in this work can be applied to the fabrication of flexible microelectronic devices.

Designing Ultra Low-k Dielectric Materials for Ease of Patterning

2010 ◽  
Vol 1249 ◽  
Author(s):  
George Andrew Antonelli ◽  
Gengwei Jiang ◽  
Mandyam Sriram ◽  
Kaushik Chattopadhyay ◽  
Wei Guo ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Beam ◽  
Plasma Reactor ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Interlayer Dielectric ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor ◽  
Low K

AbstractOrganosilicate materials with dielectric constants (k) ranging from 3.0 to 2.2 are in production or under development for use as interlayer dielectric materials in advanced interconnect logic technology. The dielectric constant of these materials is lowered through the addition of porosity which lowers the film density, making the patterning of these materials difficult. The etching kinetics and surface roughening of a series of low-k dielectric materials with varying porosity and composition were investigated as a function of ion beam angle in a 7% C4F8/Ar chemistry in an inductively-coupled plasma reactor. A similar set of low-k samples were patterned in a single damascene scheme. With a basic understanding of the etching process, we will show that it is possible to proactively design a low-k material that is optimized for a given patterning. A case study will be used to illustrate this point.

Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases

2012 ◽  
Vol 1396 ◽  
Author(s):  
Hamad A. Albrithen ◽  
Gale S. Petrich ◽  
Leslie A. Kolodziejski ◽  
Abdelmajid Salhi ◽  
Abdulrahman A. Almuhanna
Keyword(s):  
Inductively Coupled Plasma ◽  
Silicon Oxide ◽  
Etching Rate ◽  
Sample Holder ◽  
Inductively Coupled ◽  
Solid Films ◽  
Mask Layer ◽  
Organic Gases ◽  
Dry Etch ◽  
Anisotropic Etch

ABSTRACTWe report the dry etch of GaSb(001) by inductively coupled plasma reactive ion etcher. Silicon Oxide, deposited by PECVD, was used as a mask. The oxide layer proved to be almost unaffected compared to the GaSb, when using chlorine compound gases as etchants (Cl2, BCl3, and SiCl4) as well as argon. This provides high selectivity for GaSb to the mask layer. The sample holder has no silicon that may contribute to the etching process. Etching using Cl2 + Ar showed increase in the etching rate as the chlorine ratio increases; however, the process led to grassy surface and chemical like reaction. The use of SiCl4+Cl2+Ar mixture with low chlorine ratio resulted in anisotropic etch with smooth sides. It has been found for this case that the increase of the chlorine ratio led to an increased etching rate as well. The repeat of previously reported result by Swaminathan et al. [Thin Solid Films 516 (2008) 8712.] yet with a sample holder not having silicon, proved the effect of Si-contribution in producing vertical profile etch with smooth surfaces.

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