Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases

2012 ◽  
Vol 1396 ◽  
Author(s):  
Hamad A. Albrithen ◽  
Gale S. Petrich ◽  
Leslie A. Kolodziejski ◽  
Abdelmajid Salhi ◽  
Abdulrahman A. Almuhanna
Keyword(s):  
Inductively Coupled Plasma ◽  
Silicon Oxide ◽  
Etching Rate ◽  
Sample Holder ◽  
Inductively Coupled ◽  
Solid Films ◽  
Mask Layer ◽  
Organic Gases ◽  
Dry Etch ◽  
Anisotropic Etch

ABSTRACTWe report the dry etch of GaSb(001) by inductively coupled plasma reactive ion etcher. Silicon Oxide, deposited by PECVD, was used as a mask. The oxide layer proved to be almost unaffected compared to the GaSb, when using chlorine compound gases as etchants (Cl2, BCl3, and SiCl4) as well as argon. This provides high selectivity for GaSb to the mask layer. The sample holder has no silicon that may contribute to the etching process. Etching using Cl2 + Ar showed increase in the etching rate as the chlorine ratio increases; however, the process led to grassy surface and chemical like reaction. The use of SiCl4+Cl2+Ar mixture with low chlorine ratio resulted in anisotropic etch with smooth sides. It has been found for this case that the increase of the chlorine ratio led to an increased etching rate as well. The repeat of previously reported result by Swaminathan et al. [Thin Solid Films 516 (2008) 8712.] yet with a sample holder not having silicon, proved the effect of Si-contribution in producing vertical profile etch with smooth surfaces.

scholarly journals Sidewall Slope Control of InP Via Holes for 3D Integration

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 89
Author(s):  
Jongwon Lee ◽  
Kilsun Roh ◽  
Sung-Kyu Lim ◽  
Youngsu Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Sio2 Layer ◽  
Etch Depth ◽  
Rf Power ◽  
3D Integration ◽  
Inductively Coupled ◽  
Wide Range ◽  
Via Holes ◽  
Dry Etch ◽  
Icp Etcher

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of the InP via holes in a wide range of 36 to 69 degrees is possible by changing the RF power in the etcher and introducing a wet-etched SiO2 layer with a small sidewall slope of 2 degrees; this wide slope control is due to the change of InP-to-SiO2 selectivity with RF power.

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

2009 ◽  
Vol 615-617 ◽  
pp. 663-666
Author(s):  
In Ho Kang ◽  
Wook Bahng ◽  
Sung Jae Joo ◽  
Sang Cheol Kim ◽  
Nam Kyun Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Annealing Process ◽  
Activation Process ◽  
Electrical Characteristics ◽  
Inductively Coupled ◽  
Edge Termination ◽  
Post Annealing ◽  
Surface Damages ◽  
Dry Etch

The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors

1997 ◽  
Vol 70 (18) ◽  
pp. 2410-2412 ◽  
Author(s):  
F. Ren ◽  
J. W. Lee ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
C. Constantine ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Inductively Coupled Plasma ◽  
Bipolar Transistors ◽  
Inductively Coupled ◽  
Dry Etch

NANOSCALE ARRAYS IN LITHIUM NIOBATE FABRICATED BY INTERFERENCE LITHOGRAPHY AND DRY ETCHING

2010 ◽  
Vol 09 (04) ◽  
pp. 311-315
Author(s):  
G. Y. SI ◽  
A. J. DANNER ◽  
J. H. TENG ◽  
S. S. ANG ◽  
A. B. CHEW ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Inductively Coupled Plasma ◽  
Optical Constants ◽  
Etching Rate ◽  
Proton Exchange ◽  
Interference Lithography ◽  
Etching Depth ◽  
Inductively Coupled ◽  
Channel Waveguides ◽  
Total Etching

Channel waveguides have been fabricated in x-cut lithium niobate (LiNbO3) by proton exchange (PE) method and optically measured. The thickness and the optical constants of the thin PE layer were characterized using a prism coupling technique. The PE area was plasma etched and a 2.775-μm total etching depth was achieved. The measured average etching rate is 92.5 nm/min. One- and two-dimensional dense arrays of LiNbO3 nanostructures have also been fabricated by using interference lithography (IL) and inductively coupled plasma reactive ion etching (ICP-RIE) techniques.

Integration Studies of Plasma Deposited Fluorinated Amorphous Carbon

1998 ◽  
Vol 511 ◽  
Author(s):  
Thomas W. Mountsier ◽  
John A. Samuels ◽  
Richard S. Swope
Keyword(s):  
Weight Loss ◽  
Amorphous Carbon ◽  
Inductively Coupled Plasma ◽  
Silicon Oxide ◽  
Dielectric Constants ◽  
Materials Testing ◽  
Good Thermal Stability ◽  
Inductively Coupled ◽  
Low Dielectric ◽  
Materials Used

ABSTRACTRecently, we reported the deposition of fluorinated amorphous carbon (FlAC) from hexafluorobenzene (C6F6) under parallel plate (PP) and inductively coupled plasma (ICP-HDP) conditions. Based on initial materials testing, these two platforms generated comparable materials with low dielectric constants (2.4 – 2.8), low weight loss/shrinkage (< 1.5 %/hr. at 425° C), hardness (2–3 Gpa) and adhesion (4–9 kpsi). Here we attempt to answer a basic integration question: FIAC compatibility with other materials used in the interconnect scheme. Investigations of adhesion of F1AC to, and capped by, silicon oxide, silicon nitride and various metals shows generally greater stability of the ICP generated material vs. PP-FIAC. Failures appeared to occur primarily at the FIAC/film interface at 400 and 300 °C for ICP and PP respectively. Although thickness-loss and weight-loss measurements indicate good thermal stability, TDS spectra show low-level outgassing of fluorine-based molecules and fragments even in samples annealed for 4 hours at 400 °C, resulting in interface failures. Plasma treatments and anneals of the F1AC were found to have a minimal effect but liner/cap composition and processing has a strong influence on the adhesion of other films to the fluorocarbon.

scholarly journals A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 123
Author(s):  
Katarzyna Racka-Szmidt ◽  
Bartłomiej Stonio ◽  
Jarosław Żelazko ◽  
Maciej Filipiak ◽  
Mariusz Sochacki
Keyword(s):  
Silicon Carbide ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Reactive Ion Etching ◽  
Semiconductor Processing ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Hard Materials ◽  
Potential Benefits ◽  
First Time

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

ICP (inductively coupled plasma) dry etch of DUV MoSi HTPSM

1999 ◽  
Author(s):  
Kyu-Yong Lee ◽  
Lee-Ju Kim ◽  
Kyung-Han Nam ◽  
Keuntaek Park ◽  
Y. M. Ku ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled ◽  
Dry Etch
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