Ion Beam Techniques for Low K Materials Characterization

1998 ◽  
Vol 511 ◽  
Author(s):  
H. Bakhru ◽  
A. Kumar ◽  
T. Kaplan ◽  
M. Delarosa ◽  
J. Fortin ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Ion Beam Analysis ◽  
Analytical Technique ◽  
Analysis Techniques ◽  
Teflon Af ◽  
Beam Analysis ◽  
Low K

ABSTRACTIon beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous Si0 2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including Si02:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

scholarly journals A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 10
Author(s):  
Sören Möller ◽  
Daniel Höschen ◽  
Sina Kurth ◽  
Gerwin Esser ◽  
Albert Hiller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Complete Analysis ◽  
Nuclear Reaction Analysis ◽  
Beam Optics ◽  
Single Measurement ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Ion beam analysis techniques and characterization of amorphous hydrogenated GaAs

1983 ◽  
Vol 218 (1-3) ◽  
pp. 579-583 ◽  
Author(s):  
J.P. Thomas ◽  
M. Fallavier ◽  
H. Carchano ◽  
L. Alimoussa
Keyword(s):  
Ion Beam ◽  
Ion Beam Analysis ◽  
Analysis Techniques ◽  
Beam Analysis

scholarly journals Meso-scale characterization of lithium distribution in lithium-ion batteries using ion beam analysis techniques

2015 ◽  
Vol 299 ◽  
pp. 587-595 ◽  
Author(s):  
R. Gonzalez-Arrabal ◽  
M. Panizo-Laiz ◽  
K. Fujita ◽  
K. Mima ◽  
A. Yamazaki ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Ion Beam ◽  
Lithium Ion ◽  
Ion Beam Analysis ◽  
Analysis Techniques ◽  
Beam Analysis ◽  
Scale Characterization ◽  
Meso Scale

Characterization of TiNi, TiNiPd thin films by ion beam analysis techniques

2002 ◽  
Author(s):  
Vijaya K. Mathe ◽  
Dinesh K. Sood ◽  
Nick Dytlewski ◽  
Peter J. Evans
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Analysis Techniques ◽  
Beam Analysis

scholarly journals Application of ion beam analysis for the characterization of SiC- and DLC-thin films

2020 ◽  
Vol 15 ◽  
pp. 269
Author(s):  
F. Noli ◽  
P. Misaelides ◽  
M. Kokkoris ◽  
J. P. Riviere
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Rutherford Backscattering Spectrometry ◽  
Protective Coatings ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Silicon Carbon ◽  
Beam Analysis

Three series of protective coatings (thickness ca. 200-300 nm) were prepared on the surface of Ti-Al-V alloy (TA6V): silicon carbide (SiC) films produced by ion sputtering (I), silicon carbide films and subjected to Dynamic Ion Mixing (DIM) during the deposition procedure (II) and Diamond Like Carbon (DLC) films produced by ion beam deposition (III). The chemical composition (Si, C and O) of the films was determined using ion beam analysis techniques. The silicon, carbon and oxygen depth distribution was determined by proton Rutherford backscattering spectrometry (p-RBS) and using the resonances at 4.265 and 3.035 MeV of the 12C(α,α)12C and 16O(α,α)16O interactions respectively. The ratio of Si:C was found to be close to the stoichiometric one. The corrosion resistance of the coated samples was tested under strong aggressive conditions (5M HCl at 50 oC). The investigation following the corrosion attack showed that the thickness of the films remained practically unchanged. Only slight diffusion and dissolution effects were observed indicating the good quality of the produced thin films.

Characterization of GaAs[sub 1−x]N[sub x] epitaxial layers by ion beam analysis

2004 ◽  
Vol 22 (3) ◽  
pp. 908 ◽  
Author(s):  
P. Wei ◽  
M. Chicoine ◽  
S. Gujrathi ◽  
F. Schiettekatte ◽  
J.-N. Beaudry ◽  
...  
Keyword(s):  
Ion Beam ◽  
Epitaxial Layers ◽  
Ion Beam Analysis ◽  
Beam Analysis
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