Characterization of TiNi, TiNiPd thin films by ion beam analysis techniques

2002 ◽  
Author(s):  
Vijaya K. Mathe ◽  
Dinesh K. Sood ◽  
Nick Dytlewski ◽  
Peter J. Evans
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Analysis Techniques ◽  
Beam Analysis

Ion beam analysis techniques and characterization of amorphous hydrogenated GaAs

1983 ◽  
Vol 218 (1-3) ◽  
pp. 579-583 ◽  
Author(s):  
J.P. Thomas ◽  
M. Fallavier ◽  
H. Carchano ◽  
L. Alimoussa
Keyword(s):  
Ion Beam ◽  
Ion Beam Analysis ◽  
Analysis Techniques ◽  
Beam Analysis

scholarly journals Meso-scale characterization of lithium distribution in lithium-ion batteries using ion beam analysis techniques

2015 ◽  
Vol 299 ◽  
pp. 587-595 ◽  
Author(s):  
R. Gonzalez-Arrabal ◽  
M. Panizo-Laiz ◽  
K. Fujita ◽  
K. Mima ◽  
A. Yamazaki ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Ion Beam ◽  
Lithium Ion ◽  
Ion Beam Analysis ◽  
Analysis Techniques ◽  
Beam Analysis ◽  
Scale Characterization ◽  
Meso Scale

Ion Beam Techniques for Low K Materials Characterization

1998 ◽  
Vol 511 ◽  
Author(s):  
H. Bakhru ◽  
A. Kumar ◽  
T. Kaplan ◽  
M. Delarosa ◽  
J. Fortin ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Ion Beam Analysis ◽  
Analytical Technique ◽  
Analysis Techniques ◽  
Teflon Af ◽  
Beam Analysis ◽  
Low K

ABSTRACTIon beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous Si0 2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including Si02:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

Non-destructive 3D-characterization of Zn 2-2x Cu x In x S 2 -thin films with ion beam analysis

2002 ◽  
Vol 374 (4) ◽  
pp. 626-630 ◽  
Author(s):  
Spemann D. ◽  
Vogt J. ◽  
Butz T. ◽  
Oppermann D. ◽  
Bente K.
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Non Destructive

scholarly journals Application of ion beam analysis for the characterization of SiC- and DLC-thin films

2020 ◽  
Vol 15 ◽  
pp. 269
Author(s):  
F. Noli ◽  
P. Misaelides ◽  
M. Kokkoris ◽  
J. P. Riviere
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Rutherford Backscattering Spectrometry ◽  
Protective Coatings ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Silicon Carbon ◽  
Beam Analysis

Three series of protective coatings (thickness ca. 200-300 nm) were prepared on the surface of Ti-Al-V alloy (TA6V): silicon carbide (SiC) films produced by ion sputtering (I), silicon carbide films and subjected to Dynamic Ion Mixing (DIM) during the deposition procedure (II) and Diamond Like Carbon (DLC) films produced by ion beam deposition (III). The chemical composition (Si, C and O) of the films was determined using ion beam analysis techniques. The silicon, carbon and oxygen depth distribution was determined by proton Rutherford backscattering spectrometry (p-RBS) and using the resonances at 4.265 and 3.035 MeV of the 12C(α,α)12C and 16O(α,α)16O interactions respectively. The ratio of Si:C was found to be close to the stoichiometric one. The corrosion resistance of the coated samples was tested under strong aggressive conditions (5M HCl at 50 oC). The investigation following the corrosion attack showed that the thickness of the films remained practically unchanged. Only slight diffusion and dissolution effects were observed indicating the good quality of the produced thin films.

Structure of MgO/V/MgO(001) thin films studied by the combination of X-ray photoemission and ion beam analysis techniques

2006 ◽  
Vol 600 (2) ◽  
pp. 497-506 ◽  
Author(s):  
E. Román ◽  
Y. Huttel ◽  
M.F. López ◽  
R. Gago ◽  
A. Climent-Font ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
X Ray ◽  
Analysis Techniques ◽  
Beam Analysis

Characterization of GaAs[sub 1−x]N[sub x] epitaxial layers by ion beam analysis

2004 ◽  
Vol 22 (3) ◽  
pp. 908 ◽  
Author(s):  
P. Wei ◽  
M. Chicoine ◽  
S. Gujrathi ◽  
F. Schiettekatte ◽  
J.-N. Beaudry ◽  
...  
Keyword(s):  
Ion Beam ◽  
Epitaxial Layers ◽  
Ion Beam Analysis ◽  
Beam Analysis
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