In Situ Time-Resolved Reflectivity Measurements of Growth Kinetics During Solid Phase Epitaxy: A Tool To Estimate Interface Non Planarity During Growth

1985 ◽  
Vol 51 ◽  
Author(s):  
C. Licoppe ◽  
Y.I. Nissim
Keyword(s):  
Laser Annealing ◽  
Solid Phase ◽  
Growth Front ◽  
Interface Roughness ◽  
Analytical Determination ◽  
Interface Evolution ◽  
Time Resolved ◽  
First Case ◽  
Reflected Light ◽  
Inhomogeneous Temperature

ABSTRACTThe time resolved reflectivity technique is shown to give informations on the amorphous-crystalline interface evolution during solid phase epitaxial (SPE) regrowth in semiconductors. Two specific cases have been treated here. The first case is encountered in laser annealing when the growth front exhibits a curvature due to the combination of an inhomogeneous temperature distribution and a steep dependence of SPE growth rates with temperature. A computer simulation is carried out from an analytical determination of the laser induced temperature profiles to shape up the resultinq reflectivity signal. The second case is obtained when there is an evolution of interface roughness during regrowth. In order to simulate this effect a simple model is developed to treat the influence of diffusion of the reflected light at the interface, on the reflectivity modulation during SPE regrowth.

The Effect of Impurities in the SPE Kinetics in GaAs

1985 ◽  
Vol 52 ◽  
Author(s):  
C. Licoppe ◽  
Y. I. Nissim ◽  
C. Meriadec
Keyword(s):  
Solid Phase ◽  
Intrinsic Property ◽  
Interface Structure ◽  
Interface Evolution ◽  
Time Resolved ◽  
Substitutional Impurity ◽  
Effect Of Impurities ◽  
Interface Roughening ◽  
Kinetics Of ◽  
Crystal Interface

ABSTRACTSolid phase epitaxial (SPE) growth of ion implanted GaAs layers has been studied using the time resolved reflectivity technique. A series of implanted impurities have been selected to study the dependance of the nature of the impurity on the growth kinetics. It has been found that the activation energy and the kinetics of growth were independant on the choice of implanted substitutional impurity. Only impurities such as Argon were responsible of a large decrease in the regrowth rate. The same technique is shown to bring informations on the amorphous-crystal interface structure during growth. From these informations it has been possible to show that interface roughening occured during SPE in (100) GaAs. This interface evolution is an intrinsic property of the implanted GaAs material.

Solid Phase Epitaxial Regrowth of Implanted III-V Materials and Alloys

1986 ◽  
Vol 74 ◽  
Author(s):  
Christian Licoppe ◽  
Yves. I. Nissim ◽  
Christelle Meriadec ◽  
Pierre Henoc ◽  
Cecile D'Anterroches
Keyword(s):  
High Resolution ◽  
Ternary Alloy ◽  
Growth Kinetics ◽  
Solid Phase ◽  
Growth Front ◽  
Electron Micrograph ◽  
Characteristic Energy ◽  
Time Resolved ◽  
Thermally Activated ◽  
Resolution Electron

AbstractThe amorphous-crystalline (with residual defects) transition is studied in several III-V binary semiconductors and a ternary alloy. Regrowth shows the same behaviour in all cases. The growth kinetics are thermally activated and the activation energies have been measured using time resolved reflectivity measurements. Correlation with vacancy migration characteristic energy is discussed. In the particular case of GaAs, high resolution electron micrograph of the growth front are displayed. They show a rough microscopic structures together with larger scale smooth deformations, attributed to diffusion instabilities.

The Effects of Rapid Recrystallization and Ion Implanted Carbon on The Solid Phase Epitaxial Regrowth of Si1−xGex Alloy Layers On Silicon

1995 ◽  
Vol 379 ◽  
Author(s):  
M.J. Antonell ◽  
T.E. Haynes ◽  
K.S. Jones
Keyword(s):  
Elevated Temperatures ◽  
Defect Formation ◽  
Solid Phase ◽  
Growth Front ◽  
Threading Dislocation ◽  
Time Resolved ◽  
Ion Channeling ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Threading Dislocation Density

ABSTRACTTransmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of regrowth temperature and carbon introduction by ion implantation on the solid phase epitaxial regrowth (SPER) of strained 2000Å, Sio.88Ge0.12/Si alloy films grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500- 700°C) has three main effects on SPER; these include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphous-crystalline (a/c) interface, i.e., promotion of a two-dimensional (planar) growth front.1 Recrystallization of amorphized SiGe layers at higher temperatures (1 100°C) substantially modifies the defect structure in samples both with and without carbon. At these elevated temperatures threading dislocations extend completely to the Si/SiGe interface. Stacking faults are eliminated in the high temperature regrowth, and the threading dislocation density is slightly higher with carbon implantation.

Interface Stability During Solid Phase Epitaxy Of Strained GexS1-x Films on Si (100)

1993 ◽  
Vol 321 ◽  
Author(s):  
Xiaobiao Zeng ◽  
Tan-Chen Lee ◽  
John Silcox ◽  
Michael O. Thompson
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Interface Roughness ◽  
Final Thickness ◽  
Time Resolved ◽  
Transmission Electron ◽  
Interface Roughening ◽  
20 Nm ◽  
Anneal Temperature ◽  
Si Ion Implantation

ABSTRACTStrained solid phase epitaxial (SPE) regrowth of amorphous GexSi1-x on Si (100) substrates was studied using time-resolved reflectivity (TRR). Films of CVD-grown Ge0.13Si0.87 on Si were amorphized by Si ion implantation, and subsequently regrown at temperatures between 550°C and 610°. Information on regrowth dynamics and interface roughness evolution was obtained by accurately modeling the complicated TRR data for GexSi1-x regrowth using a Moving, statistically roughening interface. The SPE regrowth rate slowed as the interface crossed into the GexSi1-x layer and the originally planar interface roughened, as confirmed by transmission electron Microscopy. A Minimum in the regrowth velocity was observed after regrowing approximately 60 nm into the GexSi1-x layer; the SPE rate subsequently increased to a final, thickness-dependent velocity that was still below that for pure Si. Upon entering the GexSi1-x layer, the interface roughened quickly to a 15–20 nm amplitude, increasing only slightly more during the remainder of regrowth. The degree of roughening and velocity reduction was found to be dependent on the anneal temperature. In contrast, samples with low Ge concentrations (< 3 at.%) prepared by ion implantation exhibited minimal interface roughening and essentially identical SPE velocities as pure Si.

Kinetics and Microstructure of Transiently Annealed Implanted Polycrystalline Silicon Layers

1989 ◽  
Vol 157 ◽  
Author(s):  
J.M.C. England ◽  
P.J. Timans ◽  
R.A. Mcmahon ◽  
H. Ahmed ◽  
C. Hill ◽  
...  
Keyword(s):  
Grain Size ◽  
Polycrystalline Silicon ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Time Resolved ◽  
Microstructural Changes ◽  
Transmission Electron

ABSTRACTMicrostructural changes occurring during the early stages of rapid thermal annealing of polycrystalline silicon bipolar emitters crucially affect the final dopant distribution and hence the performance of these devices. The first stage of annealing is epitaxial regrowth in the solid phase of the layer amorphised by the implantation. In-situ studies using time-resolved reflectivity measurements, combined with cross-sectional transmission electron microscopy of partly annealed structures, have determined the effects of initial grain size, annealing temperature and amorphising species (Si or As) on the rate of regrowth and the microstructural changes which occur during annealing. As the grain size is reduced, the regrowth rate decreases and the interface roughness increases. Arsenic implantation alters the rate of regrowth in such a manner as to produce a smoother interface than that in silicon implanted material.

Optimization of thermal conductivity in composites loaded with the solid-solid phase-change materials

2018 ◽  
Vol 25 (6) ◽  
pp. 1157-1165
Author(s):  
Taoufik Mnasri ◽  
Adel Abbessi ◽  
Rached Ben Younes ◽  
Atef Mazioud
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Phase Change Materials ◽  
Solid Phase ◽  
Spherical Inclusions ◽  
First Case ◽  
The Matrix ◽  
Composite Conductivity ◽  
First Time

AbstractThis work focuses on identifying the thermal conductivity of composites loaded with phase-change materials (PCMs). Three configurations are studied: (1) the PCMs are divided into identical spherical inclusions arranged in one plane, (2) the PCMs are inserted into the matrix as a plate on the level of the same plane of arrangement, and (3) the PCMs are divided into identical spherical inclusions arranged periodically in the whole matrix. The percentage PCM/matrix is fixed for all cases. A comparison among the various situations is made for the first time, thus providing a new idea on how to insert PCMs into composite matrices. The results show that the composite conductivity is the most important consideration in the first case, precisely when the arrangement plane is parallel with the flux and diagonal to the entry face. In the present work, we are interested in exploring the solid-solid PCMs. The PCM polyurethane and a wood matrix are particularly studied.

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T. P. Smith ◽  
P. J. Stiles ◽  
W. M. Augustyniak ◽  
W. L. Brown ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Semiconductor Device ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Nitride Layer ◽  
High Dose ◽  
Infrared Transmission ◽  
Furnace Annealing

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

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