Interface Stability During Solid Phase Epitaxy Of Strained GexS1-x Films on Si (100)

1993 ◽  
Vol 321 ◽  
Author(s):  
Xiaobiao Zeng ◽  
Tan-Chen Lee ◽  
John Silcox ◽  
Michael O. Thompson
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Interface Roughness ◽  
Final Thickness ◽  
Time Resolved ◽  
Transmission Electron ◽  
Interface Roughening ◽  
20 Nm ◽  
Anneal Temperature ◽  
Si Ion Implantation

ABSTRACTStrained solid phase epitaxial (SPE) regrowth of amorphous GexSi1-x on Si (100) substrates was studied using time-resolved reflectivity (TRR). Films of CVD-grown Ge0.13Si0.87 on Si were amorphized by Si ion implantation, and subsequently regrown at temperatures between 550°C and 610°. Information on regrowth dynamics and interface roughness evolution was obtained by accurately modeling the complicated TRR data for GexSi1-x regrowth using a Moving, statistically roughening interface. The SPE regrowth rate slowed as the interface crossed into the GexSi1-x layer and the originally planar interface roughened, as confirmed by transmission electron Microscopy. A Minimum in the regrowth velocity was observed after regrowing approximately 60 nm into the GexSi1-x layer; the SPE rate subsequently increased to a final, thickness-dependent velocity that was still below that for pure Si. Upon entering the GexSi1-x layer, the interface roughened quickly to a 15–20 nm amplitude, increasing only slightly more during the remainder of regrowth. The degree of roughening and velocity reduction was found to be dependent on the anneal temperature. In contrast, samples with low Ge concentrations (< 3 at.%) prepared by ion implantation exhibited minimal interface roughening and essentially identical SPE velocities as pure Si.

Kinetics and Microstructure of Transiently Annealed Implanted Polycrystalline Silicon Layers

1989 ◽  
Vol 157 ◽  
Author(s):  
J.M.C. England ◽  
P.J. Timans ◽  
R.A. Mcmahon ◽  
H. Ahmed ◽  
C. Hill ◽  
...  
Keyword(s):  
Grain Size ◽  
Polycrystalline Silicon ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Time Resolved ◽  
Microstructural Changes ◽  
Transmission Electron

ABSTRACTMicrostructural changes occurring during the early stages of rapid thermal annealing of polycrystalline silicon bipolar emitters crucially affect the final dopant distribution and hence the performance of these devices. The first stage of annealing is epitaxial regrowth in the solid phase of the layer amorphised by the implantation. In-situ studies using time-resolved reflectivity measurements, combined with cross-sectional transmission electron microscopy of partly annealed structures, have determined the effects of initial grain size, annealing temperature and amorphising species (Si or As) on the rate of regrowth and the microstructural changes which occur during annealing. As the grain size is reduced, the regrowth rate decreases and the interface roughness increases. Arsenic implantation alters the rate of regrowth in such a manner as to produce a smoother interface than that in silicon implanted material.

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

Ion dose dependence on solid phase epitaxy of amorphous silicon carbide induced by ion implantation

2002 ◽  
Vol 742 ◽  
Author(s):  
In-Tae Bae ◽  
Manabu Ishimaru ◽  
Yoshihiko Hirotsu
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Pair Distribution Function ◽  
Solid Phase ◽  
Dose Dependence ◽  
Peak Intensity ◽  
Transmission Electron ◽  
Complete Recrystallization ◽  
Atomistic Structure ◽  
Sample Pair

ABSTRACTAmorphous silicon carbides (a-SiC) fabricated by Xe+ ion implantation into 6H-SiC (0001) to fluences of 1015 and 1016/cm2 have been annealed at 850 °C for 1 hour. Transmission electron microscopy (TEM) observations revealed that the 1015 Xe+/cm2 implanted sample was completely recrystallized, while most of the a-SiC remains in the 1016 Xe+/cm2 implanted sample. Pair-distribution function analyses of both of the as-implanted samples show that the peak intensity of Si-C heteronuclear bonds is higher and the peak intensities of Si-Si and C-C homonuclear bonds are lower in the 1015 Xe+/cm2 implanted sample, indicating that the atomistic structure of the 1015 Xe+/cm2 implanted sample is more chemically ordered than that of the 1016 Xe+/cm2 implanted sample. This result suggests that more chemically ordered atomistic structure of 1015 Xe+/cm2 implanted a-SiC leads to complete recrystallization during thermal annealing.

Low-Temperature, Solid-Phase Epitaxial Growth of Amorphized, Non-Stoichiometric GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
K. B. Belay ◽  
D. L. Llewellyn ◽  
M. C. Ridgway
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Present Report ◽  
Time Resolved ◽  
Crystalline Layer ◽  
Transmission Electron ◽  
High Doses ◽  
Insulating Properties

AbstractNon-stoichiometric GaAs layers with semi-insulating properties can be produced by low-temperature molecular beam epitaxy or ion implantation. The latter is the subject of the present report wherein the solid-phase epitaxial growth of amorphized, non-stoichiometric GaAs layers has been investigated with time-resolved reflectivity, Rutherford backscattering spectrometry and transmission electron microscopy. GaAs substrates were implanted with Ga and/or As ions and annealed in air at a temperature of 260°C. The recrystallized material was composed of a thin, crystalline layer bordered by a thick, twinned layer. Non-stoichiometry results in a roughening of the amorphous/crystalline interface and the transformation from planar to non-planar regrowth. The onset of the transformation and the rate thereof can increase with an increase in non-stoichiometry. Non-stoichiometry can be achieved on a macroscopic scale via Ga or As implants or on a microscopic scale via Ga and As implants. The influence of the latter is greatest at low doses whilst the former dominates at high doses.

Electrical and Structural Properties of MeV Si+ Ion Implantation in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Aditya Agarwal ◽  
S. Koveshnikov ◽  
K. Christensen ◽  
G. A. Rozgonyi
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Structural Defects ◽  
Extended Defects ◽  
Device Layer ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Si Ion Implantation

AbstractThe electrical properties of residual MeV ion implantation damage in Si after annealing from 600 to 1100°C for 1 hour have been investigated using Deep Level Transient Spectroscopy, Capaciatance-Voltage, and Current-Voltage measurements. These data have been correlated with structural defects imaged by Transmission Electron Microscopy. It is shown that at least 4 deep levels are associated with the buried layer of extended defects after annealing at 800, 900, 1000 and 1100°C. Additionally, for the wafer annealed at 800°C at least 5 more deep level centers are present in the device layer above the buried defects.

The Effect of Stress in the PdGe Mediated Solid Phase Epitaxial Growth of Ge on GaAs

1999 ◽  
Vol 587 ◽  
Author(s):  
Fabian Radulescu ◽  
John M. McCarthy
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Focused Ion Beam ◽  
Solid Phase ◽  
Ion Beam ◽  
Heteroepitaxial Growth ◽  
System A ◽  
Transmission Electron ◽  
Micro Cantilever ◽  
20 Nm

AbstractThe residual stress and the microstructure associated with it were studied in connection with the Pd-Ge ohmic contact formation on GaAs. Evaporated Pd (20 nm) / Ge (150 nm) / Pd (50 nm) thin film stacks on GaAs were annealed at various temperatures and the resulting microstructures were investigated by transmission electron microscopy (TEM). Micro-cantilever beam structures were fabricated with a focused ion beam (FIB) workstation and the residual stress present was calculated from the deflection magnitude. It was found that Ge solid phase epitaxial (SPE) growth on GaAs is associated with a stress relaxation of the thin film system. A new model that suggests the tensile stress induced by the intermediate layer may play an important role in the SPE growth mechanism is proposed. Other cases of solid phase heteroepitaxial growth with an intermediate medium, such as Ge/Au/Si, Co/Ti/Si (the TIME method) and Co/SiOx/Si (the OME method) are discussed in light of this newly proposed model. Also, the possibility of using controlled stress to engineer new methods for growing SPE based heterostructures will be presented.

Kinetics of Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Buried Amorphous Si Layers

1996 ◽  
Vol 439 ◽  
Author(s):  
J. C. McCallum
Keyword(s):  
Ion Implantation ◽  
Dopant Concentration ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Entire Concentration Range ◽  
Time Resolved ◽  
Amorphous Si ◽  
First Time ◽  
Kinetics Of ◽  
Suitable Environment

AbstractThe kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in buried amorphous Si (a-Si) layers produced by ion implantation. Buried a-Si layers formed by self-ion implantation provide a suitable environment for studies of the intrinsic growth kinetics of amorphous Si, free from the rate-retarding effects of H. For the first time, dopant-enhanced SPE rates have been measured under these H-free conditions. Buried a-Si layers containing uniform As concentration profiles ranging from 1–16.1 × 1019 As.cm−3 were produced by multiple-energy ion implantation and time resolved reflectivity was used to measure SPE rates over the temperature range 480–660°C. In contrast to earlier studies, the dopant-enhanced SPE rate is found to depend linearly on the As concentration over the entire concentration range measured. The SPE rate can be expressed in the form, v/vi(T) = 1 + N/[No exp(-ΔE/kT)], where vi(T) is the intrinsic SPE rate, N is the dopant concentration and No = 1.2 × 1021 cm−3, ΔE = 0.21 eV.

Synthesis of Dislocation Free Siy(SnxC1−x)1−y Alloys by Molecular Beam Deposition and Solid Phase Epitaxy

1993 ◽  
Vol 298 ◽  
Author(s):  
Gang He ◽  
Mark D. Savellano ◽  
Harry A. Atwater
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Pure Silicon ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Molecular Beam Deposition ◽  
Beam Deposition

AbstractSynthesis of strain-compensated single-crystal Siy(SnxC1-x)1-y alloy films on silicon (100) substrates has been achieved with compositions of tin and carbon greatly exceeding their normal equilibrium solubility in silicon. Amorphous SiSnC alloys were deposited by molecular beam deposition from solid sources followed by thermal annealing. In situ monitoring of crystallization was done using time-resolved reflectivity. Good solid phase epitaxy was observed for Si0.98Sn0.01C0.01, at a rate about 20 times slower than that of pure silicon. Compositional and structural analysis was done using Rutherford backscattering, electron microprobe, ion channeling, x-ray diffraction, and transmission electron microscopy.

The Influence of Implantation-Induced Non-Stoichionetry on the Epitaxial Recrystallization of CoSi2

1993 ◽  
Vol 320 ◽  
Author(s):  
M.C. Ridgway ◽  
A. Vantomme ◽  
A.-M. Van Bavel ◽  
G. Langouche
Keyword(s):  
Phase Separation ◽  
Defect Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Rate Reduction ◽  
Dose Ratio ◽  
Time Resolved ◽  
Si Substrates ◽  
Rate Retardation ◽  
Si Ion Implantation

ABSTRACTEpitaxial CoSi2 layers on Si substrates have been amorphized with Co and/or Si ion implantation. The influence of nonstoichiometry on the rate of solid-phase epitaxial growth (SPEG) of amorphized CoSi2 has been investigated with time-resolved reflectivity, Rutherford backscattering spectrometry and Mossbauer spectrometry, the latter with radioactive 57Co probes. A decrease in SPEG rate was apparent with an increase in nonstoichiometry. For a given ion dose, the decrease was greater following Co implantation. The means by which non-stoichiometry is accommodated in a crystalline CoSi2 lattice - either through phase separation or defect formation - has been considered. SPEG rate retardation was also evident in samples implanted with both Si and Co ions with a Si:Co dose ratio of 2:1. Additional mechanisms may thus also contribute to the observed SPEG rate reduction.

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