Characteristics of Laser/Energy Beam-Melted Silicon Mechanical Damages

1985 ◽  
Vol 51 ◽  
Author(s):  
El-Hang Lee

ABSTRACTWe describe what appears to be a first attempt to melt and recrystallize macroscopic (10-20 μm deep) silicon mechanical damage that is induced from wafer modification such as slicing and lapping. Recrystallized surfaces appear mirror shiny, with significantly improved surface smoothness, as compared to the coarse texture of damaged surfaces. The crystallinity also appears good in general. Through the depth of melt were observed indications of impurity migration, probably caused by accumulated segregation at the advancing solid-liquid interface. Recrystallized surfaces, despite their smoothness, remain topologically uneven as a result of lateral mass transport. In addition, the extensive heat required to melt thick layers of silicon causes slip dislocations.

1989 ◽  
Vol 157 ◽  
Author(s):  
J.S. Im ◽  
W J.D. Lipman ◽  
I.N. Miaoulis ◽  
C.K. Chenb ◽  
C.V. Thompson

ABSTRACTWe have developed a quantitative model, based on a two-dimensional finite difference enthalpy method, which accounts for the localized melting behavior of thin Si films on substrates. The model incorporates radiative and conductive heat flow components and takes account of the phase changes that occur during zone-melting recrystallization. Emphasis is placed on the effects resulting from the differences in reflectivity and emissivity between solid and liquid Si. The model provides quantitative information concerning the temperature profile of the Si film and the configuration of the solid-liquid interface. Results of the analysis indicate that there exist two distinct types of transition behavior: i) reflectivity-change dominated and ii) emissivity-change dominated. Partial melting and a nonplanar solid-liquid interface are characteristics of the reflectivity-change dominated behavior. The emissivity-change dominated behavior, on the other hand, can be characterized by explosive-like melting and a planar solid-liquid interface. The conditions and physical factors which give rise to these behaviors are discussed.


1984 ◽  
Vol 35 ◽  
Author(s):  
El-Hang Lee

ABSTRACTAn attempt has been made to systematically sort out the characteristic modes of morphological transition in the energy beam recrystallized thin film silicon on insulating substrates, and to relate them to the mechanisms of solid-liquid interface stability breakdown. Stable to unstable breakdown modes include faceted, cellular, and dendritic configurations as well as transient and composite configurations thereof. These primary modes of breakdown then lead to the secondary modes of breakdown which constitute the sub-boundary formation. The mechanics of the primary (interface) breakdown and that of the secondary (sub-boundary) breakdown must be clearly differentiated in understanding the breakdown process. Constitutional supercooling and absolute supercooling models have been used to explain the various interface instabilities.


2020 ◽  
Vol 124 (5) ◽  
pp. 2987-2993
Author(s):  
Chi-Kuang Sun ◽  
Yi-Ting Yao ◽  
Chih-Chiang Shen ◽  
Mu-Han Ho ◽  
Tien-Chang Lu ◽  
...  

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