Solid-Liquid Interface Instability in the Energy-Beam Recrystallization of Silicon on Insulator

1984 ◽  
Vol 35 ◽  
Author(s):  
El-Hang Lee
Keyword(s):  
Thin Film ◽  
Liquid Interface ◽  
Constitutional Supercooling ◽  
Silicon On Insulator ◽  
Morphological Transition ◽  
Interface Instability ◽  
Energy Beam ◽  
Characteristic Modes ◽  
Solid Liquid Interface ◽  
Solid Liquid

ABSTRACTAn attempt has been made to systematically sort out the characteristic modes of morphological transition in the energy beam recrystallized thin film silicon on insulating substrates, and to relate them to the mechanisms of solid-liquid interface stability breakdown. Stable to unstable breakdown modes include faceted, cellular, and dendritic configurations as well as transient and composite configurations thereof. These primary modes of breakdown then lead to the secondary modes of breakdown which constitute the sub-boundary formation. The mechanics of the primary (interface) breakdown and that of the secondary (sub-boundary) breakdown must be clearly differentiated in understanding the breakdown process. Constitutional supercooling and absolute supercooling models have been used to explain the various interface instabilities.

Numerical Simulation of the Effect of the Size of Nanoparticles on the Solidification Process of Nanoparticle-Enhanced Phase Change Materials

2012 ◽  
Author(s):  
Yousef M. F. El Hasadi ◽  
J. M. Khodadadi
Keyword(s):  
Particle Size ◽  
Phase Change ◽  
Phase Change Materials ◽  
Concentration Field ◽  
Solidification Process ◽  
Liquid Interface ◽  
Constitutional Supercooling ◽  
Fluid Mixture ◽  
Solid Liquid Interface ◽  
Solid Liquid

Nanoparticle-enhanced phase change materials (NEPCM) were proposed recently as alternatives to conventional phase change materials due to their enhanced thermophysical properties. In this study, the effect of the size of the nanoparticles on the morphology of the solid-liquid interface and evolving concentration field, during solidification had been reported. The numerical method that was used is based on the one-fluid-mixture model. The model takes into account the thermal as well as the solutal convection effects. A square cavity model was used in the simulation. The NEPCM that was composed of a suspension of copper nanoparticles in water was solidified from the bottom. The nanoparticles size used were 5 nm and 2 nm. The temperature difference between the hot and cold sides was 5 degrees centigrade and the loading of the nanoparticles that have been used in the simulation was 10% by mass. The results obtained from the model were compared with those existing in the literature, and the comparison was satisfactory. The solid-liquid interface for the case of NEPCM with 5 nm particle size was almost planar throughout the solidification process. However, for the case of the NEPCM with particle size of 2 nm, the solid-liquid interface evolved from a planar stable shape to an unstable dendritic shape, as the solidification process proceeded with time. This was attributed to the constitutional supercooling effect. It has been observed that the constitutional supercooling effect is more pronounced as the particle size decreases. Furthermore, the freezing time increases as the particle size decreases.

Internal Structure of a Thin Film of Mixed Polymeric Micelles on a Solid/Liquid Interface

2008 ◽  
Vol 112 (23) ◽  
pp. 6937-6945 ◽  
Author(s):  
Ilja K. Voets ◽  
Wiebe M. de Vos ◽  
Bas Hofs ◽  
Arie de Keizer ◽  
Martien A. Conhen Stuart ◽  
...  
Keyword(s):  
Thin Film ◽  
Internal Structure ◽  
Polymeric Micelles ◽  
Liquid Interface ◽  
Mixed Polymeric Micelles ◽  
Solid Liquid Interface ◽  
Solid Liquid

Solid-Liquid Interface Slip as a Rate Process

2007 ◽  
Author(s):  
A. Martini ◽  
S. Lichter ◽  
R. Q. Snurr ◽  
Q. Wang
Keyword(s):  
Thin Film ◽  
Quantitative Relationship ◽  
Liquid Interface ◽  
Rate Process ◽  
Thin Film Lubrication ◽  
Interface Slip ◽  
The Mean ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
Film Lubrication

Thin film lubrication may be significantly affected by slip at the solid-liquid interface. Slip occurs when there is a jump in the mean speed between the walls and the first layer of liquid molecules. Using molecular simulation, we show that the amount of slip is greatly affected by solvation pressure and that this dependence can be accounted for by treating slip as a rate process. This treatment enables formulation of a quantitative relationship between solvation pressure and interface slip.

Characteristics of Laser/Energy Beam-Melted Silicon Mechanical Damages

1985 ◽  
Vol 51 ◽  
Author(s):  
El-Hang Lee
Keyword(s):  
Mass Transport ◽  
Laser Energy ◽  
Mechanical Damage ◽  
Liquid Interface ◽  
Lateral Mass ◽  
Energy Beam ◽  
Coarse Texture ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
Thick Layers

ABSTRACTWe describe what appears to be a first attempt to melt and recrystallize macroscopic (10-20 μm deep) silicon mechanical damage that is induced from wafer modification such as slicing and lapping. Recrystallized surfaces appear mirror shiny, with significantly improved surface smoothness, as compared to the coarse texture of damaged surfaces. The crystallinity also appears good in general. Through the depth of melt were observed indications of impurity migration, probably caused by accumulated segregation at the advancing solid-liquid interface. Recrystallized surfaces, despite their smoothness, remain topologically uneven as a result of lateral mass transport. In addition, the extensive heat required to melt thick layers of silicon causes slip dislocations.

Numerical Modeling of Energy-Beam Induced Localized Melting of Thin SI Films

1989 ◽  
Vol 157 ◽  
Author(s):  
J.S. Im ◽  
W J.D. Lipman ◽  
I.N. Miaoulis ◽  
C.K. Chenb ◽  
C.V. Thompson
Keyword(s):  
Quantitative Information ◽  
Quantitative Model ◽  
Liquid Interface ◽  
Phase Changes ◽  
Physical Factors ◽  
Conductive Heat ◽  
Energy Beam ◽  
Si Films ◽  
Solid Liquid Interface ◽  
Solid Liquid

ABSTRACTWe have developed a quantitative model, based on a two-dimensional finite difference enthalpy method, which accounts for the localized melting behavior of thin Si films on substrates. The model incorporates radiative and conductive heat flow components and takes account of the phase changes that occur during zone-melting recrystallization. Emphasis is placed on the effects resulting from the differences in reflectivity and emissivity between solid and liquid Si. The model provides quantitative information concerning the temperature profile of the Si film and the configuration of the solid-liquid interface. Results of the analysis indicate that there exist two distinct types of transition behavior: i) reflectivity-change dominated and ii) emissivity-change dominated. Partial melting and a nonplanar solid-liquid interface are characteristics of the reflectivity-change dominated behavior. The emissivity-change dominated behavior, on the other hand, can be characterized by explosive-like melting and a planar solid-liquid interface. The conditions and physical factors which give rise to these behaviors are discussed.

Sign in / Sign up

Export Citation Format

Share Document