On the theory of stable mode of dendritic growth in the case of convective heat and mass transport at the solid-liquid interface

2018 ◽  
Author(s):  
L. V. Toropova
2005 ◽  
Vol 475-479 ◽  
pp. 2721-2724
Author(s):  
Rui Jie Zhang ◽  
Zhi He ◽  
Wan Qi Jie

A method to predict the solid-liquid interface stability and the constrained dendrite growth of multi-component alloys was developed based on the Calphad method. The method was applied to several industrial Al-Si-Mg alloys, and the predicted results were compared with some former experimental data. The good agreement between the calculation results and the experimental data demonstrates the superiority of the present method to the classical one based on constant parameter assumptions.


2019 ◽  
Vol 142 (1) ◽  
Author(s):  
J. B. Allen

In this work, we develop one- and two-dimensional phase-field simulations to approximate dendritic growth of a binary Al–2 wt% Si alloy. Simulations are performed for both isothermal as well as directional solidification. Anisotropic interface energies are included with fourfold symmetries, and the dilute alloy assumption is imposed. The isothermal results confirm the decrease in the maximum concentration for larger interface velocities as well as reveal the presence of parabolic, dendrite tips evolving along directions of maximum interface energy. The directional solidification results further confirm the formation of distinctive secondary dendritic arm structures that evolve at regular intervals along the unstable solid/liquid interface.


2015 ◽  
Vol 379 (4) ◽  
pp. 237-240 ◽  
Author(s):  
Shu Li ◽  
Zhihui Gu ◽  
Dayong Li ◽  
Shucheng Liu ◽  
Minghua Chen ◽  
...  

1985 ◽  
Vol 51 ◽  
Author(s):  
El-Hang Lee

ABSTRACTWe describe what appears to be a first attempt to melt and recrystallize macroscopic (10-20 μm deep) silicon mechanical damage that is induced from wafer modification such as slicing and lapping. Recrystallized surfaces appear mirror shiny, with significantly improved surface smoothness, as compared to the coarse texture of damaged surfaces. The crystallinity also appears good in general. Through the depth of melt were observed indications of impurity migration, probably caused by accumulated segregation at the advancing solid-liquid interface. Recrystallized surfaces, despite their smoothness, remain topologically uneven as a result of lateral mass transport. In addition, the extensive heat required to melt thick layers of silicon causes slip dislocations.


2015 ◽  
Vol 83 ◽  
pp. 310-317 ◽  
Author(s):  
Shu Li ◽  
Dayong Li ◽  
Shucheng Liu ◽  
Zhihui Gu ◽  
Wei Liu ◽  
...  

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