Structural and Electronic Properties of Negative Electron Affinity Epitaxial Diamond (110) Films Studied Using Atomic Resolution UHV STM

1998 ◽  
Vol 509 ◽  
Author(s):  
S.C. Lim ◽  
R.E. Stallcup ◽  
I. Akwani ◽  
J.M. Perez
Keyword(s):  
Electronic Properties ◽  
Electron Affinity ◽  
Epitaxial Films ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Negative Electron Affinity ◽  
Tunneling Microscopy ◽  
Structural And Electronic Properties ◽  
Theoretical Predictions ◽  
Photoelectric Threshold

AbstractWe report ultrahigh vacuum (UHV) scanning tunneling microscopy (STM) studies of the structural and electronic properties of epitaxial diamond (110) films. We observe that epitaxial diamond (110) films grow very rough due to striations. The striations are found to be due to the appearance of(111) faces and contain (100) steps. UHV STM atomic resolution images of the diamond (110) films show a (lxi) zigzag structure that measures 1.5 ± 0.1 Å × 1.5 ± 0.1 Å, in agreement with theoretical predictions for the hydrogen terminated diamond (110) surface. Ultraviolet spectroscopy shows that the epitaxial films have a photoelectric threshold of 5.3 ± 0.1 eV, providing evidence that the films have a negative electron affinity surface.

Structural and Electronic Properties of Rare-Earth Nanowires

2008 ◽  
Vol 1144 ◽  
Author(s):  
Andrew Pratt ◽  
Charles Woffinden ◽  
Christopher Bonet ◽  
Steve P. Tear
Keyword(s):  
Rare Earth ◽  
Electronic Properties ◽  
Elevated Temperatures ◽  
Earth Metal ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Preparation Conditions ◽  
Structural And Electronic Properties ◽  
Complementary Techniques ◽  
Rare Earth Silicide

ABSTRACTSub-monolayer coverages of the rare-earth metal Ho were deposited onto Si(001) substrates at elevated temperatures resulting in the formation of rare-earth silicide nanowires. Between the nanowires the substrate area reconstructs into either a 2×4 or 2×7 reconstruction depending on the specific preparation conditions. We have studied the structural and electronic properties of both the nanowires and the reconstructed areas with the complementary techniques of scanning tunneling microscopy (STM) and metastable de-excitation spectroscopy (MDS) revealing the electronic similarities between the 2×4 and 2×7 phases. Evidence for the presence of hybridized Si 3s3p-Ho 6s5d bonds suggests that these reconstructions form as a precursor to nanowire growth.

Structural and electronic properties of an ordered grain boundary formed by separated (1,0) dislocations in graphene

Nanoscale ◽  
2015 ◽  
Vol 7 (7) ◽  
pp. 3055-3059 ◽  
Author(s):  
Chuanxu Ma ◽  
Haifeng Sun ◽  
Hongjian Du ◽  
Jufeng Wang ◽  
Aidi Zhao ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Density Functional ◽  
Single Layer ◽  
Density Functional Theory Calculations ◽  
Single Layer Graphene ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Functional Theory ◽  
Structural And Electronic Properties ◽  
Periodic Chain

We present an investigation of the structural and electronic properties of a linear periodic chain of pentagon-heptagon pairs in single-layer graphene/SiO2 using scanning tunneling microscopy/spectroscopy, joint with density functional theory calculations.

Sign in / Sign up

Export Citation Format

Share Document