scholarly journals Production of Strontium Sulfide Coatings by Metal Organic Chemical Vapor Deposition

1998 ◽  
Vol 508 ◽  
Author(s):  
T.S. Moss ◽  
R.C. Dye ◽  
R.T. Tuenge
Keyword(s):  
Scale Up ◽  
Chemical Vapor ◽  
Fold Increase ◽  
Outer Radius ◽  
Small Scale ◽  
Thickness Variation ◽  
Organic Chemical ◽  
Strontium Sulfide ◽  
Organic Reagents ◽  
Metal Organic

AbstractThis work was focused on the MOCVD of the cerium-doped strontium sulfide (SrS:Ce) phosphor for use in thin film electroluminescent displays (TFELs). Following previous research on a small scale reactor, a feasibility scale-up using a commercially available reactor enlarged the size of the deposition area to a 4” diameter wafer or a 2” by 2” glass slide. Films were deposited from the reaction of Sr(thd)2, Ce(thd)4, and H2S at 450 °C and 5 torr. This system employed a liquid delivery system for the accurate and repeatable delivery of the metal organic reagents. The deposition from this reactor was shown to be crystalline-as-deposited SrS with a (200) orientation, possibly a result of the thin nature of the coating and the involvement of (200) grains in the initial nucleation process. The wafers showed good uniformity, but had some thickness variation near the outer radius of the wafer resulting from the addition of H2S from the outside edge. There were eighteen total deposition experiments, of which nine were characterized for EL performance. The highest brightness observed was 5 fL. The samples were exceedingly thin as a result of the fifteen fold increase in the surface area between the deposition reactors. Increasing the sample thickness to 7,000 Å or higher will dramatically increase the brightness of the emission.

scholarly journals Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations

2019 ◽  
Vol 9 (11) ◽  
pp. 2279
Author(s):  
Zhi Ye ◽  
Hong Nguyen ◽  
Shih-Wei Feng ◽  
Hsiang-Chen Wang ◽  
Hwei-Ling Chou
Keyword(s):  
Strain Relaxation ◽  
Chemical Vapor ◽  
Fold Increase ◽  
Layer Growth ◽  
Lateral Strain ◽  
Organic Chemical ◽  
Time Resolved ◽  
Dislocation Reduction ◽  
Metal Organic ◽  
Sample Structure

InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral strain relaxation in growth geometry. We present the further growth optimization and innovative characterization of InGaN layers overgrown on different structures with varying In concentrations. The photoelectrical and optical properties of the InGaN layers with/without capping GaN layer are investigated by time-resolved picosecond transient grating and temperature dependence photoluminescence. We note a 10-fold increase in carrier lifetime in the InGaN layers when the sample structure changed from PIN to single InGaN layer.

scholarly journals Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations

2019 ◽  
Author(s):  
Zhi Ting Ye ◽  
Hong Thai Nguyen ◽  
Shih-Wei Feng ◽  
Hsiang-Chen Wang ◽  
Hwei-Ling Chou
Keyword(s):  
Strain Relaxation ◽  
Chemical Vapor ◽  
Fold Increase ◽  
Layer Growth ◽  
Lateral Strain ◽  
Organic Chemical ◽  
Time Resolved ◽  
Structure Changes ◽  
Dislocation Reduction ◽  
Metal Organic

InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral strain relaxation in growth geometry. We present the further growth optimization and innovative characterization of InGaN layers overgrown on different structures with varying In concentrations. The photoelectrical and optical properties of the InGaN layers with or without capping GaN layer were investigated by time-resolved picosecond transient grating and temperature dependence photoluminescence. We note a 10-fold increase in carrier lifetime in the InGaN layers when the sample structure changes from PIN to single InGaN layer.

Structural and electronic properties of defects in semiconductors

1995 ◽  
Vol 53 ◽  
pp. 4-5
Author(s):  
J.L. Batstone
Keyword(s):  
Semiconductor Device ◽  
Chemical Vapor ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Extended Defects ◽  
Transmission Electron ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Metal Organic ◽  
Film Substrate

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Electron Irradiation Induced Trap In N-Type Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
Z-Q. Fang ◽  
J. W. Hemsky ◽  
D. C. Look ◽  
M. P. Mack ◽  
R. J. Molnar ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Electric Field Effects ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Organic Chemical Vapor Deposition

AbstractA 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

2021 ◽  
Vol 118 (16) ◽  
pp. 162109
Author(s):  
Esmat Farzana ◽  
Fikadu Alema ◽  
Wan Ying Ho ◽  
Akhil Mauze ◽  
Takeki Itoh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Organic Chemical ◽  
Field Plate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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