scholarly journals Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations

2019 ◽  
Vol 9 (11) ◽  
pp. 2279
Author(s):  
Zhi Ye ◽  
Hong Nguyen ◽  
Shih-Wei Feng ◽  
Hsiang-Chen Wang ◽  
Hwei-Ling Chou
Keyword(s):  
Strain Relaxation ◽  
Chemical Vapor ◽  
Fold Increase ◽  
Layer Growth ◽  
Lateral Strain ◽  
Organic Chemical ◽  
Time Resolved ◽  
Dislocation Reduction ◽  
Metal Organic ◽  
Sample Structure

InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral strain relaxation in growth geometry. We present the further growth optimization and innovative characterization of InGaN layers overgrown on different structures with varying In concentrations. The photoelectrical and optical properties of the InGaN layers with/without capping GaN layer are investigated by time-resolved picosecond transient grating and temperature dependence photoluminescence. We note a 10-fold increase in carrier lifetime in the InGaN layers when the sample structure changed from PIN to single InGaN layer.

scholarly journals Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations

2019 ◽  
Author(s):  
Zhi Ting Ye ◽  
Hong Thai Nguyen ◽  
Shih-Wei Feng ◽  
Hsiang-Chen Wang ◽  
Hwei-Ling Chou
Keyword(s):  
Strain Relaxation ◽  
Chemical Vapor ◽  
Fold Increase ◽  
Layer Growth ◽  
Lateral Strain ◽  
Organic Chemical ◽  
Time Resolved ◽  
Structure Changes ◽  
Dislocation Reduction ◽  
Metal Organic

InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral strain relaxation in growth geometry. We present the further growth optimization and innovative characterization of InGaN layers overgrown on different structures with varying In concentrations. The photoelectrical and optical properties of the InGaN layers with or without capping GaN layer were investigated by time-resolved picosecond transient grating and temperature dependence photoluminescence. We note a 10-fold increase in carrier lifetime in the InGaN layers when the sample structure changes from PIN to single InGaN layer.

scholarly journals Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4050 ◽  
Author(s):  
Chuan-Yang Liu ◽  
Ya-Chao Zhang ◽  
Sheng-Rui Xu ◽  
Li Jiang ◽  
Jin-Cheng Zhang ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Layer Growth ◽  
Organic Chemical ◽  
Propagation Mechanism ◽  
Nucleation Layer ◽  
Low Dislocation Density ◽  
Structural And Electrical Properties ◽  
Metal Organic

In this work, a sputtered AlN template is employed to grow high-quality AlGaN/GaN heterostructures, and the effects of AlN nucleation layer growth conditions on the structural and electrical properties of heterostructures are investigated in detail. The optimal growth condition is obtained with composited AlN nucleation layers grown on a sputtered AlN template, resulting in the smooth surface morphology and superior transport properties of the heterostructures. Moreover, high crystal quality GaN material with low dislocation density has been achieved under the optimal condition. The dislocation propagation mechanism, stress relief effect in the GaN grown on sputtered AlN, and metal organic chemical vapor deposition AlN nucleation layers are revealed based on the test results. The results in this work demonstrate the great potential of AlGaN/GaN heterostructures grown on sputtered AlN and composited AlN nucleation layers for microelectronic applications.

Influence of Indium Incorporation on Recombination Dynamics in AlInGaN Layers Grown by Pulsed Metal Organic Chemical Vapor Deposition

2003 ◽  
Vol 764 ◽  
Author(s):  
Jae Ho Song ◽  
Jhang W. Lee ◽  
P.W. Yu ◽  
Mee-Yi Ryu ◽  
J. Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Localized States ◽  
Organic Chemical ◽  
Time Resolved ◽  
Temperature Range ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Recombination Dynamics

AbstractWe investigated the recombination dynamics of the AlInGaN grown by a pulsed metal organic chemical vapor deposition (PMOCVD) by using the temperature dependent photoluminescence (PL) and time resolved photoluminescence (TRPL). The indium mole fractions of our samples are 0-3% and the PL measurement temperatures are 10-300K. The PL data show that AlInGaN layers with higher indium ratios exhibit significantly stronger PL intensities and less intensity reduction to the temperature increase. The TRPL data show that higher indium layers yield shorter lifetime in the low temperature range and longer lifetime in the high temperature range. These results indicate that the indium contents into the AlInGaN layers generate more localized states, which are likely to make the recombination processes in the AlInGaN layers less sensitive to the variation of the temperature.

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

scholarly journals Production of Strontium Sulfide Coatings by Metal Organic Chemical Vapor Deposition

1998 ◽  
Vol 508 ◽  
Author(s):  
T.S. Moss ◽  
R.C. Dye ◽  
R.T. Tuenge
Keyword(s):  
Scale Up ◽  
Chemical Vapor ◽  
Fold Increase ◽  
Outer Radius ◽  
Small Scale ◽  
Thickness Variation ◽  
Organic Chemical ◽  
Strontium Sulfide ◽  
Organic Reagents ◽  
Metal Organic

AbstractThis work was focused on the MOCVD of the cerium-doped strontium sulfide (SrS:Ce) phosphor for use in thin film electroluminescent displays (TFELs). Following previous research on a small scale reactor, a feasibility scale-up using a commercially available reactor enlarged the size of the deposition area to a 4” diameter wafer or a 2” by 2” glass slide. Films were deposited from the reaction of Sr(thd)2, Ce(thd)4, and H2S at 450 °C and 5 torr. This system employed a liquid delivery system for the accurate and repeatable delivery of the metal organic reagents. The deposition from this reactor was shown to be crystalline-as-deposited SrS with a (200) orientation, possibly a result of the thin nature of the coating and the involvement of (200) grains in the initial nucleation process. The wafers showed good uniformity, but had some thickness variation near the outer radius of the wafer resulting from the addition of H2S from the outside edge. There were eighteen total deposition experiments, of which nine were characterized for EL performance. The highest brightness observed was 5 fL. The samples were exceedingly thin as a result of the fifteen fold increase in the surface area between the deposition reactors. Increasing the sample thickness to 7,000 Å or higher will dramatically increase the brightness of the emission.

Electrical and Optical Characteristics of Isoelectronic Al-doped GaN Films Grown by Metal Organic Chemical Vapor Deposition

2002 ◽  
Vol 722 ◽  
Author(s):  
Jae-Hoon Lee ◽  
Jong-Hyun Kim ◽  
Hyun-Min Ko ◽  
Sung-Bum Bae ◽  
Kyu-Suk Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Background Concentration ◽  
Photoluminescence Intensity ◽  
Al Doping ◽  
Time Resolved ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractThe effects of the isoelectronic Al-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to 500 cm2/Vs for the sample grown at a TMAl flow rate of 10 νmol/min, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.

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