Nitrogen-Doped Few-Layer Graphene Grown Vertically on a Cu Substrate via C60/Nitrogen Microwave Plasma and Its Field Emission Properties

2020 ◽  
Vol 124 (39) ◽  
pp. 21684-21691
Author(s):  
Hui Zheng ◽  
Qingqing Chu ◽  
Peng Zheng ◽  
Liang Zheng ◽  
Xiaolong Zheng ◽  
...  
2016 ◽  
Vol 25 (7) ◽  
pp. 078101
Author(s):  
Yong-Xin Zhang ◽  
Fei Liu ◽  
Cheng-Min Shen ◽  
Tian-Zhong Yang ◽  
Jun Li ◽  
...  

2011 ◽  
Vol 248 (11) ◽  
pp. 2623-2626 ◽  
Author(s):  
V. I. Kleshch ◽  
E. A. Vasilyeva ◽  
S. A. Lyashenko ◽  
I. V. Obronov ◽  
A. V. Tyurnina ◽  
...  

2014 ◽  
Vol 1 (2) ◽  
pp. 025601 ◽  
Author(s):  
Jun Lei Qi ◽  
Fu Zhang ◽  
Li Xia Zhang ◽  
Jian Cao ◽  
Ji Cai Feng

2006 ◽  
Vol 14 (2-3) ◽  
pp. 151-164 ◽  
Author(s):  
A. V. Okotrub ◽  
L. G. Bulusheva ◽  
V. V. Belavin ◽  
A. G. Kudashov ◽  
A. V. Gusel'nikov ◽  
...  

1998 ◽  
Vol 508 ◽  
Author(s):  
A.T. Sowers ◽  
B.L. Ward ◽  
R.J. Nemanich

AbstractThis study explores the field emission properties of nitrogen doped diamond grown by microwave plasma CVD. Several diamond samples were grown on silicon under varying conditions. With certain process parameters, films can be grown which exhibit photoluminescence bands at 1.945eV and 2.154eV that are attributed to single substitutional nitrogen. Field emission characteristics were measured in ultrahigh vacuum with a position variable anode. For samples grown with gas phase [N]/[C] ratios less than 16, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured without damage. These measurements indicate relatively high threshold fields (>100V/µm) for electron emission. From the data, two possible field emission mechanisms are presented. Conducting defect states in the bandgap of diamond may provide a source of electrons to the emitting diamond surface.


2011 ◽  
Vol 279 ◽  
pp. 88-92
Author(s):  
Jin Hai Gao ◽  
Wu Qing Zhang ◽  
Zhen Li

The globe-like diamond microcrystalline aggregates films were fabricated by microwave plasma chemical vapor deposition method. The field emission properties and emission stability of the films were tested using a diode structure in vacuum. It was found that the globe-like diamond microcrystalline aggregates films exhibited good electron emission properties and stability. The turn-on field of 0. 55 V /μm and the current density of 11mA/cm2 at the electric fields of 2.73V/μm were obtained. At the successive operator circles, the turn-on field tends to stabilize at 1. 08V /μm and the current density of 6.6 mA/cm2 is obtained.


2014 ◽  
Vol 1035 ◽  
pp. 3-6
Author(s):  
Jin Hai Gao ◽  
Zhen Li ◽  
Wu Qing Zhang

The sphere-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti metal layer was used as substrates. The fabricated diamond microcrystalline aggregates were evaluated by Raman scattering spectroscopy, x-ray diffraction spectrum (XRD), scanning electron microscopy (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the sphere-like diamond microcrystalline-aggregates films exhibited good electron emission properties. The turn-on field was only 0.55V/μm, and emission current density as high as 11mA/cm2 was obtained under an applied field of 2.18V/μm for the first operation. After several cycling operations, the field emission tended to stable characteristics of current versus voltage. The stability evolvement and mechanism are investigated relating to microstructure of the sphere-like diamond microcrystalline-aggregates films.


2016 ◽  
Vol 4 (10) ◽  
pp. 2079-2087 ◽  
Author(s):  
Dajun Wu ◽  
Chi Zhang ◽  
Cheng Liang ◽  
Yiping Zhu ◽  
Shaohui Xu ◽  
...  

An emission cell comprising multi-layer graphene on nickel-coated silicon microchannel plates was prepared.


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