Effect of Ni and Al on the Low-Temperature Field Aided Lateral Crystallization (FALC)

1998 ◽  
Vol 508 ◽  
Author(s):  
Sang-Hyun Park ◽  
Seung-Ik Jun ◽  
Chan-Jae Lee ◽  
Yong-Ho Yang ◽  
Duck-Kyun Choi
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Crystallization Temperature ◽  
Metal Induced Crystallization ◽  
Crystallization Method ◽  
Free Region ◽  
Lateral Crystal ◽  
Lateral Crystallization ◽  
Si Films ◽  
Temperature Crystallization

AbstractThere have been many reports on the low temperature crystallization of amorphous silicon films by introducing a trace amount of metal impurity for low temperature poly-Si TFTs applications. MIC (Metal Induced Crystallization) uses various metals, to lower crystallization temperature. In this study, a new crystallization method called FALC (Field Aided Lateral Crystallization) in which an electric field is applied during the crystallization was explored. Among possible alloying elements with Si, Ni and Al were selected to compare the effects of these impurities on the FALC.A trace of Ni lowered the crystallization temperature of a-Si down to 5001C and induced lateral crystal growth along the electric field into the metal free region. But Al exhibited no such effect. A new crystallization method, FALC, showed considerably enhanced speed of lateral crystallization and a strong preferred orientation in crystallized Si-films.

The Effects of Cu on Field Aided Lateral Crystallization (FALC) of Amorphous Silicon (a-Si) Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Jae-Bok Lee ◽  
Chul-Ho Kim ◽  
Se-Youl Kwon ◽  
Duck-Kyun Choi
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Applied Field ◽  
Polycrystalline Silicon ◽  
Annealing Temperature ◽  
Negative Electrode ◽  
Free Region ◽  
Lateral Crystallization ◽  
Novel Concept ◽  
Si Films

ABSTRACTA novel concept of field aided lateral crystallization (FALC) and the effects of Cu on FALC of amorphous silicon (a-Si) were investigated. Cu was found to induce the lateral crystallization toward a metal-free region as well as the crystallization of a-Si in contact with Cu. In particular, the lateral crystallization caused by Cu was noticeably accelerated at the negative electrode side in every pattern with an aid of electric field, while it was retarded at the positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species (DDS) in the reaction between metal and Si. The FALC velocity increased with the applied field intensity and the annealing temperature. The crystallization of a-Si was achieved at temperatures as low as 375°C when the annealing time increased in the presence of high electric field, above 30V/cm. Therefore, we could demonstrate the possibility of low temperature (<500°C) polycrystalline silicon (poly-Si) crystallization using Cu as a mediator in FALC technology.

Enhanced Low-Temperature Crystallization of Amorphous Si Films Using AlCl3 Vapor

2001 ◽  
Vol 685 ◽  
Author(s):  
Jin Hyung Ahn ◽  
Ji Hye Eom ◽  
Byung Tae Ahn
Keyword(s):  
Detection Limit ◽  
Low Temperature ◽  
Rough Surface ◽  
Direct Contact ◽  
Metal Film ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization

AbstractIt is known that the direct contact between Al and a-Si enhances the crystallization of a-Si film. But the poly-Si films crystallized by the direct contact of Al metal film suffer the problems of rough surface and pores. In our study, we utilized the vapor from AlCl3 instead of Al metal film. The crystallization was enhanced by annealing a-Si films with AlCl3 that the crystallization was completed in 5h at 540. And the surface was as smooth as that of the a-Si film. The Al incorporation into the poly-Si film took place, but the content was below the detection limit of AES.

A New Field-Aided Germanium-Induced Lateral Crystallization of Silicon

2001 ◽  
Vol 664 ◽  
Author(s):  
Kianoush Naeli ◽  
Shamsoddin Mohajerzadeh ◽  
Ali Khakifirooz ◽  
Saber Haji ◽  
Ebrahim A. Soleimani
Keyword(s):  
Electric Field ◽  
Grain Growth ◽  
Negative Electrode ◽  
Crystallization Rate ◽  
Lateral Growth ◽  
Annealing Temperatures ◽  
Lateral Crystallization ◽  
Si Films ◽  
First Time ◽  
Induced Crystallization

ABSTRACTThe effect of an electric field on germanium-seeded lateral crystallization of a-Si is studied for the first time and compared to this effect in Ni-induced lateral growth. While the crystallization rate is lower when Ge is used as the nucleation seed and annealing should be done at higher temperatures, filed-aided crystallization shows a similar behavior to that observed for Ni-induced crystallization. Optical microscopy results indicate that grain growth starting from the negative electrode occurs in Si films at annealing temperatures higher than 480°C, while the applied electric field ranges form 200 to 1400V/cm. SEM was also used to confirm the crystallinity of the films.

Study of low-temperature crystallization of amorphous Si films obtained using ferritin with Ni nanoparticles

2005 ◽  
Vol 86 (26) ◽  
pp. 262106 ◽  
Author(s):  
Hiroya Kirimura ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Mitsuhiro Okuda ◽  
Ichiro Yamashita
Keyword(s):  
Low Temperature ◽  
Ni Nanoparticles ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

Physical Analysis of Electric Field Effect on Metal-Induced Crystallization of a-Si

2010 ◽  
Vol 663-665 ◽  
pp. 654-657
Author(s):  
Guang Wei Wang ◽  
Hong Xing Zheng ◽  
Su Ying Yao ◽  
Feng Shan Zhang
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Critical Value ◽  
Physical Analysis ◽  
Electric Field Effect ◽  
Static Electric Field ◽  
Metal Induced Crystallization ◽  
Electromigration Effect ◽  
Lateral Crystallization ◽  
Induced Crystallization

Amorphous silicon (a-Si) film crystallized by Ni-induced lateral crystallization under static electric field was analyzed. It has been demonstrated that Ni-induced lateral crystallization of a-Si is directional with electric field. Moreover, there exists a critical value of electric field strength, below which the rate of Ni-induced lateral crystallization of a-Si increases remarkably with the increase of field strength, while above which the rate will decrease instead. This phenomenon can be interpreted well based on electromigration effect.

Low-Temperature Crystallization of Amorphous Si Films Using Ferritin Protein with Ni Nanoparticles

2019 ◽  
Vol 3 (8) ◽  
pp. 195-201
Author(s):  
Y. Uraoka ◽  
Hiroya Kirimura ◽  
Takashi Fuyuki ◽  
Mitsuhiro Okuda ◽  
Ichiro Yamashita
Keyword(s):  
Low Temperature ◽  
Ni Nanoparticles ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization

High Quality Poly-Si Film and Transistor Formed by Nickel-Induced- Lateral-Crystallization and Pulsed-Rapid-Thermal-Annealing

2001 ◽  
Vol 685 ◽  
Author(s):  
T.C. Leung ◽  
C.F. Cheng ◽  
M.C. Poon
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Low Cost ◽  
Drain Current ◽  
Large Area ◽  
High Quality ◽  
Lateral Crystallization ◽  
Si Films

AbstractNickel Induced Lateral Crystallization (NILC) and Pulsed Rapid Thermal Annealing (PRTA) have been used to study new low temperature and high quality poly-silicon (poly-Si) films and thin film transistors (TFTs). The growth rate of poly-Si films has been found to greatly increase from 0.025μm/minute to 1.07μm/minute, and the drain current and performance of TFTs have increased by around 75%. The new poly-Si technology has good potential to apply in high performance, large area, fast throughput, low cost and even low temperature device applications.

Sign in / Sign up

Export Citation Format

Share Document