Study of low-temperature crystallization of amorphous Si films obtained using ferritin with Ni nanoparticles

2005 ◽  
Vol 86 (26) ◽  
pp. 262106 ◽  
Author(s):  
Hiroya Kirimura ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Mitsuhiro Okuda ◽  
Ichiro Yamashita
2019 ◽  
Vol 3 (8) ◽  
pp. 195-201
Author(s):  
Y. Uraoka ◽  
Hiroya Kirimura ◽  
Takashi Fuyuki ◽  
Mitsuhiro Okuda ◽  
Ichiro Yamashita

2001 ◽  
Vol 685 ◽  
Author(s):  
Jin Hyung Ahn ◽  
Ji Hye Eom ◽  
Byung Tae Ahn

AbstractIt is known that the direct contact between Al and a-Si enhances the crystallization of a-Si film. But the poly-Si films crystallized by the direct contact of Al metal film suffer the problems of rough surface and pores. In our study, we utilized the vapor from AlCl3 instead of Al metal film. The crystallization was enhanced by annealing a-Si films with AlCl3 that the crystallization was completed in 5h at 540. And the surface was as smooth as that of the a-Si film. The Al incorporation into the poly-Si film took place, but the content was below the detection limit of AES.


2002 ◽  
Vol 74 (1-4) ◽  
pp. 315-321 ◽  
Author(s):  
Jin Hyung Ahn ◽  
Ji Hye Eom ◽  
Kyung Hoon Yoon ◽  
Byung Tae Ahn

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1005-1009 ◽  
Author(s):  
Dong Kyun Sohn ◽  
Jeong No Lee ◽  
Sang Won Kang ◽  
Byung Tae Ahn

1996 ◽  
Vol 424 ◽  
Author(s):  
Dong Kyun Sohn ◽  
Dae Gyu Moon ◽  
Byung Tae Ahn

AbstractLow-temperature crystallization of amorphous Si (a-Si) films was investigated by adsorbing copper ions on the surface of the films. The copper ions were adsorbed by spincoating of Cu solution. This new process lowered the crystallization temperature and reduced crystallization time of a-Si films. For 1000 ppm solution, the a-Si film was partly crystallized down to 500°C in 20 h and almost completely crystallized at 530°C in 20 h. The adsorbed Cu on the surface acted as a seed of crystalline and caused fractal growth. The fractal size was varied from 10 to 200 prm, depending on the Cu concentration in solution. But the grain size of the films was about 400 nm, which was similar to that of intrinsic films crystallized at 600°C.


2002 ◽  
Vol 2 (2) ◽  
pp. 135-139 ◽  
Author(s):  
Jin Hyung Ahn ◽  
Jeong No Lee ◽  
Yoon Chang Kim ◽  
Byung Tae Ahn

2021 ◽  
Vol 138 ◽  
pp. 111241
Author(s):  
Boseon Yun ◽  
Tan Tan Bui ◽  
Paul Lee ◽  
Hayeong Jeong ◽  
Seung Beom Shin ◽  
...  

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