Low-Temperature, High-Quality Silicon Dioxide Thin Films Deposited Using Tetramethylsilane (TMS)

1998 ◽  
Vol 508 ◽  
Author(s):  
D. M. Reber ◽  
S. J. Fonash
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Flat Band ◽  
Large Area ◽  
High Quality ◽  
Low Leakage ◽  
Low Leakage Current

AbstractSilicon dioxide thin films have been deposited at temperatures from 40°C to 250°C by plasma enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon containing precursor. The properties of the PECVD TMS oxides (PETMS-Oxs) were analyzed with Fourier Transform Infrared (FTIR) transmission spectroscopy, BOE and P-etch rates and both current-voltage (I-V) and capacitance-voltage (C-V) electrical characterization. At both 130 °C and 250 °C, deposition conditions were identified which formed high quality as-deposited oxide films. Under the best conditions, unannealed Al/PETMS-Ox/c-Si capacitor structures displayed flat band voltages of Vfb = -2.5 V and breakdown fields (Vbd) in excess of 8 MV/cm. These PETMS-Ox films also show low leakage current densities <10-9 A/cm2 which can be maintained up to fields in excess of 4.5 MV/cm. The PETMS oxide electrical quality and process simplicity combine to make a very attractive oxide deposition technology for low temperature, large area applications.

Low Temperature Silicon Dioxide Thin Films Deposited Using Tetramethylsilane for Stress Control and Coverage Applications

2001 ◽  
Vol 695 ◽  
Author(s):  
Xin Lin ◽  
Stephen J. Fonash
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Oxide Thin Films ◽  
Large Area ◽  
Deposition Pressure ◽  
Micro Electro Mechanical Systems ◽  
Stress Control ◽  
Deposition Conditions

ABSTRACTLow temperature silicon dioxide thin films have been prepared by plasma-enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon precursor at 100- 200°C in the pressure range of 2- 8 Torr. PECVD TMS oxide thin films deposited at these temperatures and pressures exhibit adjustable stress. The type of stress, including tensile stress, zero stress, and compressive stress, as well as the stress level can be tailored as desired by changing the deposition conditions and film thickness. In addition, the conformality of PECVD TMS oxide thin films varies significantly with the deposition conditions. It improves when the deposition pressure is raised and the substrate temperature is reduced. The mechanisms for the variations of stress and conformality with respect to deposition conditions are discussed in this study. The adjustable stress and conformality of the PECVD TMS oxide make it a promising material for many low temperature applications, such as inter-level dielectric, micro-electro-mechanical systems (MEMs), microfabrication, and large area electronics.

Preparation and Characterization of Low Temperature Silicon Dioxide Thin Films Using Tetramethylsilane (TMS) for Microfabrication Applications

2001 ◽  
Vol 685 ◽  
Author(s):  
Xin Lin ◽  
Stephen J. Fonash
Keyword(s):  
Low Temperature ◽  
Silicon Dioxide ◽  
Gas Flow ◽  
Oxide Films ◽  
Annealing Treatment ◽  
Chemical Vapor ◽  
Flow Rate Ratio ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Gas Dilution

AbstractLow temperature silicon dioxide depositions have been carried out by plasma enhanced chemical vapor deposition (PECVD) using TMS as the Si precursor at 100-200°C at the pressure of 2-8 Torr. An RF power of 40 W and a TMS:O2 gas flow rate ratio of 1:500 without inert gas dilution were used in the depositions. It was found that the current-voltage (I-V) characteristics of as-deposited oxide films improved as the substrate temperature increased or deposition pressure decreased. Oxide films deposited at 2-3 Torr exhibited typical Fowler-Nordheim (F-N) tunneling characteristics and breakdown voltages greater than 8 MV/cm. The best capacitance-voltage (C-V) characteristics, giving a small flat band voltage shift, a small amount of positive oxide charge, a small hysteresis in bi-directional C-V sweep, and a low interface trap density, were obtained at 3 Torr. Post-deposition annealing in forming gas at the deposition temperature was performed and proved to be an effective approach for improving the electrical properties of the deposited oxide films without compromising the low temperature aspect of the process. By annealing at 200°C, the F-N tunneling barrier height increased by as much as 0.6 eV, the flat-band voltage and the hysteresis in C-V sweep were reduced by 0.74 V and 0.08 V, respectively. In addition, hydrogen was found to play a key role in the annealing treatment and its mechanisms were discussed.

Epitaxial Growth of Ba1−xSrxTiO3 Thin Films on YBa2Cu3O7−x Electrode by PE-MOCVD

1993 ◽  
Vol 335 ◽  
Author(s):  
C.S. Chern ◽  
S. Liang ◽  
Z.Q. Shi ◽  
S. Yoon ◽  
A. Safari ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrode Materials ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Pyroelectric Coefficient ◽  
Zero Bias ◽  
Bst Thin Films ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Bst Films

AbstractPlasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) has been successfully employed for the deposition of (100) oriented barium strontium titanate (BST) thin films on a variety of substrate and electrode materials. The incorporation of O2 plasma, which was used as oxidation reactant, has helped to reduce the required temperature for deposition of high-quality STO and BST thin films. This low temperature processing may make it possible to integrate BST on Si and GaAs. BST films with low leakage current densities of about 10−7 A/cm2 at 2-volt (about 105 V/cm) operation were obtained from PE-MOCVD processing. Moreover, the BST results of capacitance-temperature (C-T) measurements show that most of the PE-MOCVD BST films have Curie temperatures of about 30–35°C and a peak dielectric constant of 600–800 at zero bias voltage, The sharp transition in the C-T data indicates that the BST films may have a high induced pyroelectric coefficient at room temperature, which is highly desirable for uncooled IR imaging arrays. The x-ray diffraction and Rutherford backscattering spectrometry results show that the BST film composition reproducibility was well controlled at around Ba0.75Sr0.25TiO3 with a 4% variation. Device quality BST thin films with the thickness of 1000–2000 Å were produced. These results indicate that PE-MOCVD has high potential to be further developed and promoted as a production deposition technique providing high permittivity dielectric thin films for microelectronics and IR sensor industries.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

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