Hydrogen in a-Si:H Deposited by an Expanding Thermal Plasma: A Temperature, Growth Rate and Isotope Study

MRS Proceedings ◽

10.1557/proc-507-529 ◽

1998 ◽

Vol 507 ◽

Cited By ~ 23

Author(s):

W.M.M. Kessels ◽

M.C.M. Van De Sanden ◽

R.J. Severens ◽

L.J. Van Ijzendoorn ◽

D.C. Schram

Keyword(s):

Thermal Plasma ◽

Growth Rates ◽

Atomic Hydrogen ◽

Elastic Recoil ◽

Temperature Growth ◽

Elastic Recoil Detection ◽

Wide Range ◽

Hydrogen Interaction ◽

Isotope Study ◽

Substrate Temperatures

ABSTRACTThe hydrogen and silicon density of a-Si:H-films deposited by an expanding thermal plasma have been investigated for a wide range of substrate temperatures and growth rates by infrared absorption spectroscopy in combination with elastic recoil detection and Rutherford backscattering. The study reveals that, despite the increasing atomic hydrogen interaction and high substrate temperatures, the a-Si:H remains purely amorphous at low growth rates as concluded from Raman spectroscopy. Additionally, the infrared spectroscopy proportionality constants of the silicon-hydrogen and silicon-deuterium bondings have been recalibrated.

Download Full-text

Silicon Nitride from Microwave Plasma: Fabrication and Characterization

MRS Proceedings ◽

10.1557/proc-68-183 ◽

1986 ◽

Vol 68 ◽

Author(s):

Yves Tessier ◽

J. E. Klemberg-Sapieha ◽

S. Poulin-Dandurand ◽

M. R. Wertheimer

Keyword(s):

Refractive Index ◽

Silicon Nitride ◽

Etch Rate ◽

Microwave Plasma ◽

Audio Frequency ◽

Elastic Recoil ◽

Deposition Rates ◽

Elastic Recoil Detection ◽

Fabrication And Characterization ◽

Substrate Temperatures

AbstractPlasma silicon nitride (P-SiN) films were prepared from SiH4/NH3 mixtures in a large volume microwave plasma (LMP) apparatus, at substrate temperatures T2 ranging from ambient to 250°C.Under otherwise nominally identical fabrication conditions, deposition rates were 10 to 25 times greater than those reported by others for radio- or audio-frequency plasmas.Based on film compositions, determined by elastic recoil detection (ERD), and measurements of such properties as density, refractive index, etch rate in dilute HF, and moisture permeation coefficient, our best P-SiN films (produced at T2 ≥ 200°C) are very similar to those reported in the literature.

Download Full-text

Hydrogen Incorporation in Amorphous Silicon Prepared at High Deposition Rates by the VHF-GD Technique

MRS Proceedings ◽

10.1557/proc-192-583 ◽

1990 ◽

Vol 192 ◽

Cited By ~ 6

Author(s):

F. Finger ◽

V. Viret ◽

A. Shah ◽

X.-M. Tang ◽

J. Weber ◽

...

Keyword(s):

Elastic Recoil ◽

Film Properties ◽

Hydrogen Incorporation ◽

Elastic Recoil Detection ◽

Surface Mobility ◽

Detection Analysis ◽

Photothermal Deflection Spectroscopy ◽

Usual Manner ◽

Low Energy Ions ◽

Substrate Temperatures

ABSTRACTThe influence of deposition temperature on hydrogen incorporation in a-Si:H prepared by VHF glow discharge at 70 MHz is investigated using hydrogen evolution, elastic recoil detection analysis and infrared spectroscopy.The films were further characterized by dark- and photoconductivity and by photothermal deflection spectroscopy. While the electronic film properties deteriorate in the usual manner with decreasing substrate temperature it is found that the total hydrogen content CH and the degree of microstructure that can be directly correlated to CH increase only moderately. It is concluded that a higher flux of low energy ions in the VHF plasma plays a key role in this context, possibly by increasing the surface mobility of the H atoms and thereby preventing the build-in of a large amount of hydrogen at low substrate temperatures.

Download Full-text

Silicon nitride from microwave plasma: fabrication and characterization

Canadian Journal of Physics ◽

10.1139/p87-132 ◽

1987 ◽

Vol 65 (8) ◽

pp. 859-863 ◽

Cited By ~ 10

Author(s):

Yves Tessier ◽

J. E. Klemberg-Sapieha ◽

S. Poulin-Dandurand ◽

M. R. Wertheimer ◽

S. Gujrathi

Keyword(s):

Silicon Nitride ◽

Etch Rate ◽

Microwave Plasma ◽

Ternary Mixtures ◽

Audio Frequency ◽

Elastic Recoil ◽

Deposition Rates ◽

Elastic Recoil Detection ◽

Fabrication And Characterization ◽

Substrate Temperatures

Plasma silicon nitride (P-SiN) films were prepared from SiH4–NH3 mixtures and from ternary mixtures with Ar or N2 in a large-volume microwave plasma apparatus, at substrate temperatures Ts ranging from ambient to 250 °C. Under otherwise nominally identical fabrication conditions, deposition rates were 10 to 25 times greater than those reported by others for radio-or audio-frequency plasmas. Based on film compositions determined by elastic recoil detection, and measurements of such properties as density, refractive index, etch rate in dilute HF, and the moisture permeation coefficient, our best P-SiN films (produced at Ts ≥ 200 °C) were very similar to those reported in the literature.

Download Full-text

High-rate (> 1nm/s) and low-temperature (< 400°C) deposition of silicon nitride using an N2/SiH4 and NH3/SiH4 expanding thermal plasma

MRS Proceedings ◽

10.1557/proc-762-a18.6 ◽

2003 ◽

Vol 762 ◽

Author(s):

J. Hong ◽

W.M.M. Kessels ◽

M.C.M. van de Sanden

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Thermal Plasma ◽

Dark Conductivity ◽

High Rate ◽

Elastic Recoil ◽

Film Properties ◽

Elastic Recoil Detection ◽

Force Microscopy ◽

Atomic Force

AbstractHigh-rate (> 1 nm/s) and low-temperature (50– 400°C) deposition of silicon nitride (a-SiNx:H) films has been investigated by the expanding thermal plasma (ETP) technique using SiH4 as Si-containing and N2 or NH3 as N-containing precursor gases. The structural, optical and electrical properties of the a-SiNx:H films have been studied by elastic recoil detection, spectroscopic ellipsometry, infrared spectroscopy, dark conductivity measurements and atomic force microscopy. The film properties of the ETP deposited a-SiNx:H films in this low-temperature range are discussed in terms of deposition rate, atomic composition, UV-VIS optical and IR vibrational properties, conductivity, and surface topography of the films.

Download Full-text

Dependence of the MoSe2 Formation on the Mo Orientation and the Na Concentration for Cu(In,Ga)Se2 Thin-Film Solar Cells

MRS Proceedings ◽

10.1557/proc-865-f8.1 ◽

2005 ◽

Vol 865 ◽

Cited By ~ 11

Author(s):

Daniel Abou-Ras ◽

Debashis Mukherji ◽

Gernot Kostorz ◽

David Brémaud ◽

Marc Kälin ◽

...

Keyword(s):

Rutherford Backscattering Spectrometry ◽

Thin Film Solar Cells ◽

Elastic Recoil ◽

X Ray Diffraction ◽

Elastic Recoil Detection Analysis ◽

X Ray ◽

Elastic Recoil Detection ◽

Detection Analysis ◽

Transmission Electron ◽

Substrate Temperatures

AbstractThe formation of MoSe2 has been studied on polycrystalline Mo layers and on Mo single crystals in dependence of the Mo orientation, the Na concentration, and also as a function of the Se source and the substrate temperatures. The Mo substrates were selenized by evaporation of Se. The samples were analyzed by means of X-ray diffraction, Rutherford backscattering spectrometry, elastic recoil detection analysis, and by conventional and high-resolution transmission electron microscopy. It was found that the crystal structure and orientation of the MoSe2 layer change with increasing substrate temperature. However, the texture of MoSe2 does not depend on the orientation of the Mo substrate. It was also found that the MoSe2 growth is significantly influenced by the Na concentration at substrate temperatures of 450°C and 580°C.

Download Full-text

Yttrium Oxyhydrides for Photochromic Applications: Correlating Composition and Optical Response

10.26434/chemrxiv.7034585 ◽

2018 ◽

Author(s):

Dmitrii Moldarev ◽

Elbruz M. Baba ◽

Marcos V. Moro ◽

Chang C. You ◽

Smagul Zh. Karazhanov ◽

...

Keyword(s):

Medical Devices ◽

Ternary Diagram ◽

Optical And Electrical Properties ◽

Ambient Conditions ◽

Elastic Recoil ◽

Elastic Recoil Detection Analysis ◽

Photochromic Properties ◽

Smart Windows ◽

Elastic Recoil Detection ◽

Detection Analysis

It has been recently demonstrated that yttrium oxyhydride(YHO) films can exhibit reversible photochromic properties when exposed to illumination at ambient conditions. This switchable optical propertyenables their utilization in many technological applications, such as smart windows, sensors, goggles, medical devices, etc. However, how the composition of the films affects their optical properties is not fully clear and therefore demands a straightforward investigation. In this work, the composition of YHO films manufactured by reactive magnetron sputtering under different conditions is deduced in a ternary diagram from Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA). The results suggest that stable compounds are formed with a specificchemical formula – YH<sub>2-δ</sub>O<sub>δ</sub>. In addition, optical and electrical properties of the films are investigated, and a correlation with their compositions is established. The corresponding photochromic response is found in a specific oxygen concentration range (0.45 < δ < 1.5) with maximum and minimum of magnitude on the lower and higher border, respectively.

Download Full-text