Hydrogen Incorporation in Amorphous Silicon Prepared at High Deposition Rates by the VHF-GD Technique

1990 ◽  
Vol 192 ◽  
Author(s):  
F. Finger ◽  
V. Viret ◽  
A. Shah ◽  
X.-M. Tang ◽  
J. Weber ◽  
...  

ABSTRACTThe influence of deposition temperature on hydrogen incorporation in a-Si:H prepared by VHF glow discharge at 70 MHz is investigated using hydrogen evolution, elastic recoil detection analysis and infrared spectroscopy.The films were further characterized by dark- and photoconductivity and by photothermal deflection spectroscopy. While the electronic film properties deteriorate in the usual manner with decreasing substrate temperature it is found that the total hydrogen content CH and the degree of microstructure that can be directly correlated to CH increase only moderately. It is concluded that a higher flux of low energy ions in the VHF plasma plays a key role in this context, possibly by increasing the surface mobility of the H atoms and thereby preventing the build-in of a large amount of hydrogen at low substrate temperatures.

1992 ◽  
Vol 284 ◽  
Author(s):  
C. Plossu ◽  
F. Seigneur ◽  
B. Balland ◽  
B. Piot ◽  
A. Straboni

ABSTRACTIn this work, we report the effects of an ammonia plasma nitridation on the charge trapping properties of thin SiO2 films in correlation with their nitrogen and hydrogen contents. Electron traps characteristics were determined by die avalanche injection technique. Hydrogen contents were measured by Elastic Recoil Detection analysis (ERDA). Nitrogen depth profiles were obtained with Auger spectroscopy. It is shown that the bulk electron trapping properties are essentially controlled by the specificity of hydrogen and nitrogen incorporation in the SiO2 films during the ammonia plasma process. For short nitridation times, an increase of hydrogen related electron trap densities is observed in good agreement with hydrogen ERDA measurements. However hydrogen concentration never exceeds 3 at% and can be scaled down by a short time post-nitridation anneal in oxygen, to a level comparable indeed inferior to that of a non-nitrided oxide. For heavy nitridation, an additional electron trap is detected which could be associated to the presence of nitrogen in the bulk of SiO2.


2005 ◽  
Vol 865 ◽  
Author(s):  
Daniel Abou-Ras ◽  
Debashis Mukherji ◽  
Gernot Kostorz ◽  
David Brémaud ◽  
Marc Kälin ◽  
...  

AbstractThe formation of MoSe2 has been studied on polycrystalline Mo layers and on Mo single crystals in dependence of the Mo orientation, the Na concentration, and also as a function of the Se source and the substrate temperatures. The Mo substrates were selenized by evaporation of Se. The samples were analyzed by means of X-ray diffraction, Rutherford backscattering spectrometry, elastic recoil detection analysis, and by conventional and high-resolution transmission electron microscopy. It was found that the crystal structure and orientation of the MoSe2 layer change with increasing substrate temperature. However, the texture of MoSe2 does not depend on the orientation of the Mo substrate. It was also found that the MoSe2 growth is significantly influenced by the Na concentration at substrate temperatures of 450°C and 580°C.


2018 ◽  
Author(s):  
Dmitrii Moldarev ◽  
Elbruz M. Baba ◽  
Marcos V. Moro ◽  
Chang C. You ◽  
Smagul Zh. Karazhanov ◽  
...  

It has been recently demonstrated that yttrium oxyhydride(YHO) films can exhibit reversible photochromic properties when exposed to illumination at ambient conditions. This switchable optical propertyenables their utilization in many technological applications, such as smart windows, sensors, goggles, medical devices, etc. However, how the composition of the films affects their optical properties is not fully clear and therefore demands a straightforward investigation. In this work, the composition of YHO films manufactured by reactive magnetron sputtering under different conditions is deduced in a ternary diagram from Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA). The results suggest that stable compounds are formed with a specificchemical formula – YH<sub>2-δ</sub>O<sub>δ</sub>. In addition, optical and electrical properties of the films are investigated, and a correlation with their compositions is established. The corresponding photochromic response is found in a specific oxygen concentration range (0.45 < δ < 1.5) with maximum and minimum of magnitude on the lower and higher border, respectively.


2021 ◽  
Author(s):  
Hélène Bureau ◽  
Hicham Khodja ◽  
Imène Estève ◽  
Matthieu Charrondière-Lewis ◽  
Eloise Gaillou ◽  
...  

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