Crack Nucleation in ion Beam Irradiated Magnesium Oxide and Sapphire Crystals

1997 ◽  
Vol 504 ◽  
Author(s):  
V. N. Gurarie ◽  
D. N. Jamieson ◽  
R. Szymanski ◽  
A. V. Orlov ◽  
J. S. Williams
Keyword(s):  
Thermal Stress ◽  
Ion Implantation ◽  
Magnesium Oxide ◽  
Stress Resistance ◽  
Large Scale ◽  
Crack Nucleation ◽  
Ion Beam ◽  
High Energy ◽  
Pulsed Plasma ◽  
Near Surface

ABSTRACTMonocrystals of magnesium oxide and sapphire have been subjected to ion implantation with 86 keV Si− ions to a dose of 5×1016 cm−2 and with 3 MeV H+ ions with a dose of 4.8×1017 cm−2 prior to thermal stress testing in a pulsed plasma. Fracture and deformation characteristics of the surface layer were measured in ion implanted and unimplanted samples using optical and scanning electron microscopy. Ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the thermal stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance is determined for sapphire crystals implanted with 86 keV Si−. In comparison with 86 keV Si− ions the high energy implantation of sapphire and magnesium oxide crystals with 3 MeV H+ ions results in the formation of large-scale defects, which produce a low density crack system and cause a considerable reduction in the resistance to damage. Fracture mechanics principles are applied to evaluate the size of the implantation-induced microcracks which are shown to be comparable with the ion range and the damage range in the crystals tested. Possible mechanisms of crack nucleation for a low and high energy ion implantation are discussed.

Ion Beam Processing

MRS Bulletin ◽  
1987 ◽  
Vol 12 (2) ◽  
pp. 18-21
Author(s):  
C.W. White
Keyword(s):  
Ion Implantation ◽  
Large Scale ◽  
Wide Spectrum ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Surface Region ◽  
Ion Beams ◽  
Group V ◽  
Near Surface ◽  
Research Activities

Ion beams are used extensively in materials research for processing and synthesis as well as for characterization. In the last few years, enormous advances have been made regarding the use of ion beams for processing or synthesis, and this issue of the MRS BULLETIN will review some of those advances. (The use of ion beams for materials characterization will be the subject of a future issue of the BULLETIN.) The areas covered in this issue are ion implantation, ion beam mixing, ion-assisted deposition, and direct ion beam deposition. For each area, recognized experts in the field prepared overview articles that should be very interesting to those who are not active in the field, and that should be useful to other experts in the field.The first large-scale use of ion beams for materials modification took place in the semiconductor industry more than 20 years ago when ion implantation began to be used to dope the near-surface region of silicon with Group III or Group V dopants. The use of ion implantation in the semiconductor industry has undergone explosive growth, and today almost all electronic devices are fabricated utilizing at lest one ion implantation step.In addition to the semiconductor area, research is being carried out using ion implantation in a multitude of other areas which include ceramics, metals and alloys, insulators, etc. The article on “Ion Implantation” by S.T. Picraux and P.S. Peercy provides an excellent overview of current research activities involving ion implantation of a wide spectrum of materials.

Applications of Energy Beams in Material and Device Processing

1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Traditional Role ◽  
Near Surface ◽  
Device Processing ◽  
Composition Modification ◽  
Directed Energy ◽  
Transistor Fabrication

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

scholarly journals A Study on the Wettability of Ion-Implanted Stainless and Bearing Steels

Metals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 208 ◽  
Author(s):  
Xinchun Chen ◽  
Xuan Yin ◽  
Jie Jin
Keyword(s):  
Stainless Steel ◽  
Ion Implantation ◽  
Ion Beam ◽  
Bearing Steel ◽  
Contact Angles ◽  
Electrochemical Technique ◽  
Near Surface ◽  
Thermodynamic Stabilization ◽  
Deposition Processes ◽  
Surface Modified

To satisfy the harsh service demand of stainless steel and aviation bearing steel, the anticorrosion and wettability behaviors of 9Cr18 stainless steel and M50 bearing steel tailored by ion beam surface modification technology were experimentally investigated. By controlling the ion implantation (F+, N+, N+ + Ti+) or deposition processes, different surface-modified layers and ceramic layers or composite layers with both effects (ion implantation and deposition processes) were obtained on metal surfaces. The wettability was characterized by a contact angle instrument, and the thermodynamics stabilization of ion implantation-treated metals in corrosive solution was evaluated through an electrochemical technique. X-ray photoelectron spectroscopy (XPS) was employed for detecting the chemical bonding states of the implanted elements. The results indicated that ion implantation or deposition-induced surface-modified layers or coating layers could increase water contact angles, namely improving hydrophobicity as well as thermodynamic stabilization in corrosive medium. Meanwhile, wettability with lubricant oil was almost not changed. The implanted elements could induce the formation of new phases in the near-surface region of metals, and the wettability behaviors were closely related to the as-formed ceramic components and amorphous sublayer.

scholarly journals ION BEAM MATERIALS ANALYSIS AND MODIFICATIONS AT keV TO MeV ENERGIES AT THE UNIVERSITY OF NORTH TEXAS

2014 ◽  
Vol 27 ◽  
pp. 1460147 ◽  
Author(s):  
BIBHUDUTTA ROUT ◽  
MANGAL S. DHOUBHADEL ◽  
PRAKASH R. POUDEL ◽  
VENKATA C. KUMMARI ◽  
WICKRAMAARACHCHIGE J. LAKSHANTHA ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Nuclear Physics ◽  
Ion Beam ◽  
High Energy ◽  
Particle Accelerators ◽  
Educational Training ◽  
North Texas ◽  
University Of North Texas ◽  
Ion Beam Lithography ◽  
The University

The University of North Texas (UNT) Ion Beam Modification and Analysis Laboratory (IBMAL) has four particle accelerators including a National Electrostatics Corporation (NEC) 9SDH-2 3 MV tandem Pelletron, a NEC 9SH 3 MV single-ended Pelletron, and a 200 kV Cockcroft-Walton. A fourth HVEC AK 2.5 MV Van de Graaff accelerator is presently being refurbished as an educational training facility. These accelerators can produce and accelerate almost any ion in the periodic table at energies from a few keV to tens of MeV. They are used to modify materials by ion implantation and to analyze materials by numerous atomic and nuclear physics techniques. The NEC 9SH accelerator was recently installed in the IBMAL and subsequently upgraded with the addition of a capacitive-liner and terminal potential stabilization system to reduce ion energy spread and therefore improve spatial resolution of the probing ion beam to hundreds of nanometers. Research involves materials modification and synthesis by ion implantation for photonic, electronic, and magnetic applications, micro-fabrication by high energy (MeV) ion beam lithography, microanalysis of biomedical and semiconductor materials, development of highenergy ion nanoprobe focusing systems, and educational and outreach activities. An overview of the IBMAL facilities and some of the current research projects are discussed.

Modification of Strength Properties of Oxide Materials by Ion Irradiation

2018 ◽  
Vol 781 ◽  
pp. 70-75
Author(s):  
Sergei Ghyngazov ◽  
Valeria Kostenko ◽  
Sergey Shevelev ◽  
Anatoliy I. Kupchishin ◽  
Aleksey Kondratyuk
Keyword(s):  
Magnesium Oxide ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Strength Properties ◽  
Critical Stress Intensity Factor ◽  
Ceramic Technology ◽  
Surface Layers ◽  
Nanosecond Duration ◽  
Near Surface ◽  
Moderate Power

The effect of ion irradiation on the strength characteristics of magnesium oxide and ceramics based on zirconia is studied. The MgO samples were a single crystal grown in an artificial manner. Samples of zirconium ceramics were prepared by ceramic technology. Irradiation of MgO crystals was carried out by Si+ ions (E = 150 keV), Fe+ (E = 70 keV), C+ (E = 50 keV) at room temperature. The fluence varied within the range (1016–1017) сm–2. The modification of the investigated types of ceramics was carried out by ions Al+ (Е = 60 keV), Ar+ (Е= 60 keV), N+ (E = 50 keV). We used ion beams of microsecond duration and moderate power (the current density in the pulse was 3 10-3 A/cm2). Fluence was 1017 cm-2. The irradiation of the ceramics with an ion beam C+ (E = 50 keV) was also performed with nanosecond duration (τ = 50 ns). It is established that ionic irradiation of magnesium oxide leads to an increase in crack resistance and a critical stress intensity factor. Irradiation of ceramics leads to hardening of its near-surface layers.

scholarly journals On the Use of Electromagnetics for Earth Imaging of the Polar Regions

2019 ◽  
Vol 41 (1) ◽  
pp. 5-45 ◽  
Author(s):  
Graham J. Hill
Keyword(s):  
Electric Fields ◽  
Measurement Errors ◽  
Large Scale ◽  
Broad Band ◽  
High Energy ◽  
Polar Regions ◽  
Occupation Times ◽  
Magnetotelluric Data ◽  
Near Surface ◽  
Snow And Ice

Abstract The polar regions are host to fundamental unresolved challenges in Earth studies. The nature of these regions necessitates the use of geophysics to address these issues, with electromagnetic and, in particular, magnetotelluric studies finding favour and being applied over a number of different scales. The unique geography and climatic conditions of the polar regions means collecting magnetotelluric data at high latitudes, which presents challenges not typically encountered and may result in significant measurement errors. (1) The very high contact resistance between electrodes and the surficial snow and ice cover (commonly MΩ) can interfere with the electric field measurement. This is overcome by using custom-designed amplifiers placed at the active electrodes to buffer their high impedance contacts. (2) The proximity to the geomagnetic poles requires verification of the fundamental assumption in magnetotellurics that the magnetic source field is a vertically propagating, horizontally polarised plane wave. Behaviour of the polar electro-jet must be assessed to identify increased activity (high energy periods) that create strong current systems and may generate non-planar contributions. (3) The generation of ‘blizstatic’, localised random electric fields caused by the spin drift of moving charged snow and ice particles that produce significant noise in the electric fields during periods of strong winds. At wind speeds above ~ 10 m s−1, the effect of the distortion created by the moving snow is broad-band. Station occupation times need to be of sufficient length to ensure data are collected when wind speed is low. (4) Working on glaciated terrain introduces additional safety challenges, e.g., weather, crevasse hazards, etc. Inclusion of a mountaineer in the team, both during the site location planning and onsite operations, allows these hazards to be properly managed. Examples spanning studies covering development and application of novel electromagnetic approaches for the polar regions as well as results from studies addressing a variety of differing geologic questions are presented. Electromagnetic studies focusing on near-surface hydrologic systems, glacial and ice sheet dynamics, as well as large-scale volcanic and tectonic problems are discussed providing an overview of the use of electromagnetic methods to investigate fundamental questions in solid earth studies that have both been completed and are currently ongoing in polar regions.

ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW

2005 ◽  
Vol 04 (03) ◽  
pp. 269-286 ◽  
Author(s):  
F. WATT ◽  
A. A. BETTIOL ◽  
J. A. VAN KAN ◽  
E. J. TEO ◽  
M. B. H. BREESE
Keyword(s):  
Mass Production ◽  
Large Scale ◽  
Focused Ion Beam ◽  
Extreme Ultraviolet ◽  
Ion Beam ◽  
Large Area ◽  
Near Surface ◽  
X Ray ◽  
Projection Lithography ◽  
New Generation

To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master stamps in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic stamps of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.

Radiation Effects in Nonmetals: Amorphization, Phase Decomposition, and Nanoparticles

1998 ◽  
Vol 540 ◽  
Author(s):  
A. Meldrum ◽  
L.A. Boatner ◽  
C.W. White ◽  
D.O. Henderson
Keyword(s):  
Ion Implantation ◽  
Electron Irradiation ◽  
Radiation Effects ◽  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Semiconductor Nanocrystals ◽  
Heavy Ion ◽  
Fused Silica ◽  
Near Surface

AbstractRadiation effects in nonmetals have been studied for well over a century by geologists, mineralogists, physicists, and materials scientists. The present work focuses on recent results of investigations of the ion-beam-induced amorphization of the ABO4 compounds – including the orthophosphates (LnPO4; Ln = lanthanides) and the orthosilicates: zircon (ZrSiO4), hafnon (HfSiO4), and thorite (ThSiO4). In the case of the orthosilicates, heavy-ion irradiation at elevated temperatures causes the precipitation of a nanocrystalline metal oxide. Electron irradiation effects in these amorphized insulating ceramics can produce localized recrystallization on a nanometer scale. Similar electron irradiation techniques were used to nucleate monodispersed compound semiconductor nanocrystals formed by ion implantation of the elemental components into fused silica. Methods for the formation of novel structural relationships between embedded nanocrystals and their hosts have been developed and the results presented here demonstrate the general flexibility of ion implantation and irradiation techniques for producing unique near-surface microstructures in ion-implanted host materials.

Intense Ion-Beam Treatment of Materials

MRS Bulletin ◽  
1996 ◽  
Vol 21 (8) ◽  
pp. 58-62 ◽  
Author(s):  
Harold A. Davis ◽  
Gennady E. Remnev ◽  
Regan W. Stinnett ◽  
Kiyoshi Yatsui
Keyword(s):  
Energy Density ◽  
Surface Treatment ◽  
Laser Processing ◽  
Beam Energy ◽  
Ion Beam ◽  
The United States ◽  
High Energy ◽  
High Energy Density ◽  
X Rays ◽  
Near Surface

Over the past decade, researchers in Japan, Russia, and the United States have been investigating the application of intense-pulsed-ion-beam (IPIB) technology (which has roots in inertial confinement fusion programs) to the surface treatment and coating of materials. The short range (0.1–10 μm) and high-energy density (1–50 J/cm2) of these short-pulsed (t ≥ 1 μs) beams (with ion currents I = 5–50 kA, and energies E = 100–1,000 keV) make them ideal flash-heat sources to rapidly vaporize or melt the near-surface layer of targets similar to the more familiar pulsed laser deposition (PLD) or laser surface treatment. The vaporized material can form coatings on substrates, and surface melting followed by rapid cooling (109 K/s) can form amorphous layers, dissolve precipitates, and form nonequilibrium microstructures.An advantage of this approach over laser processing is that these beams deliver 0.1–10 KJ per pulse to targets at expected overall electrical efficiencies (i.e., the ratio of extracted ion-beam energy to the total energy consumed in generating the beam) of 15–40% (compared to < 1% for the excimer lasers often used for similar applications). Consequently IPIB hardware can be compact and require relatively low capital investment. This opens the promise of environmentally conscious, low-cost, high-throughput manufacturing. Further, efficient beam transport to the target and excellent coupling of incident ion energy to targets are achieved, as opposed to lasers that may have limited coupling to reflective materials or produce reflecting plasmas at high incident fluence. The ion range is adjustable through selection of the ion species and kinetic energy, and the beam energy density can be tailored through control of the beam footprint at the target to melt (1–10 J/cm2) or to vaporize (10–50 J/cm2) the target surface. Beam pulse durations are short (≥ 1 μs) to minimize thermal conduction. Some disadvantages of IPIB processing over laser processing include the need to form and propagate the beams in vacuum, and the need for shielding of x-rays produced by relatively low-level electron current present in IPIB accelerators. Also these beams cannot be as tightly focused onto targets as lasers, making them unsuitable for applications requiring treatment on small spatial scales.

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