Large-scale nanotwins in Cu films/Cu nanowires via stress engineering by a high-energy ion beam bombardment process: growth and characterization

2014 ◽  
Vol 2 (46) ◽  
pp. 9805-9812 ◽  
Author(s):  
Tsung-Cheng Chan ◽  
Yu-Ze Chen ◽  
Yu-Lun Chueh ◽  
Chien-Neng Liao
Keyword(s):  
Large Scale ◽  
Ion Beam ◽  
High Energy ◽  
Cu Films ◽  
Cu Nanowires ◽  
Stress Engineering

Large Scale Ion Beam Equipment and Processing - Review of Ammtra Project -

1993 ◽  
Vol 316 ◽  
Author(s):  
Koji Matsuda
Keyword(s):  
Surface Modification ◽  
Large Scale ◽  
Ion Beam ◽  
Science And Technology ◽  
High Energy ◽  
Film Deposition ◽  
High Current ◽  
Development Organization ◽  
Beam System ◽  
Industrial Science

An R&D project of large scale ion beam equipment and processing is being carried out from 1986 till 1994. The project includes R&D of five ion beam systems and three material processes for surface modification. The five equipment R&D projects are:(1)High current metal ion beam system,(2)Integrated high current ion beam system,(3)Ionized multiple beam system with high deposition rate,(4)High energy ion beam system,(5)Gas-phase focused ion beam system.The three materials processing R&D projects are:(1)Glass surface modification,(2)Metal surface modification,(3)Low scattering multilayer film deposition. This paper reviews recent progress on development of the project. This work was conducted in the program: ’Advanced Material Processing and Machining System’ consigned to AMMTRA from the New Energy and Industrial Technology Development Organization, which is carried out under the Industrial Science and Technology Frontier Program enforced by the Agency of Industrial Science and Technology of Japan.

scholarly journals Laser-induced layers peeling of sputtering coatings at 1064 nm wavelength

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Kesheng Guo ◽  
Yanzhi Wang ◽  
Ruiyi Chen ◽  
Yuhui Zhang ◽  
Anna Sytchkova ◽  
...  
Keyword(s):  
Large Scale ◽  
Ion Beam ◽  
Damage Model ◽  
High Energy ◽  
Thermomechanical Properties ◽  
Thermomechanical Coupling ◽  
Laser Damage ◽  
Ion Beam Sputtering ◽  
Coating Materials ◽  
Damage Process

AbstractLarge-scale layers peeling after the laser irradiation of dual ion beam sputtering coatings is discovered and a model is established to explain it. The laser damage morphologies relate to the laser fluence, showing thermomechanical coupling failure at low energy and coating layers separation at high energy. High-pressure gradients appear in the interaction between laser and coatings, resulting in large-scale layer separation. A two-step laser damage model including defect-induced damage process and ionized air wave damage process is proposed to explain the two phenomena at different energy. At relatively high energies (higher than 20 J/cm2), ionization of the air can be initiated, leading to a peeling off effect. The peeling effect is related to the thermomechanical properties of the coating materials.

Crack Nucleation in ion Beam Irradiated Magnesium Oxide and Sapphire Crystals

1997 ◽  
Vol 504 ◽  
Author(s):  
V. N. Gurarie ◽  
D. N. Jamieson ◽  
R. Szymanski ◽  
A. V. Orlov ◽  
J. S. Williams
Keyword(s):  
Thermal Stress ◽  
Ion Implantation ◽  
Magnesium Oxide ◽  
Stress Resistance ◽  
Large Scale ◽  
Crack Nucleation ◽  
Ion Beam ◽  
High Energy ◽  
Pulsed Plasma ◽  
Near Surface

ABSTRACTMonocrystals of magnesium oxide and sapphire have been subjected to ion implantation with 86 keV Si− ions to a dose of 5×1016 cm−2 and with 3 MeV H+ ions with a dose of 4.8×1017 cm−2 prior to thermal stress testing in a pulsed plasma. Fracture and deformation characteristics of the surface layer were measured in ion implanted and unimplanted samples using optical and scanning electron microscopy. Ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the thermal stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance is determined for sapphire crystals implanted with 86 keV Si−. In comparison with 86 keV Si− ions the high energy implantation of sapphire and magnesium oxide crystals with 3 MeV H+ ions results in the formation of large-scale defects, which produce a low density crack system and cause a considerable reduction in the resistance to damage. Fracture mechanics principles are applied to evaluate the size of the implantation-induced microcracks which are shown to be comparable with the ion range and the damage range in the crystals tested. Possible mechanisms of crack nucleation for a low and high energy ion implantation are discussed.

The Basic Physical Principles of Ion, Electron, and X-Ray Detectors and Their Application to Microanalysis

1985 ◽  
Vol 43 ◽  
pp. 154-157
Author(s):  
A.J. Tousimis
Keyword(s):  
Ion Beam ◽  
Depth Resolution ◽  
Sample Surface ◽  
High Energy ◽  
X Rays ◽  
X Ray ◽  
Electrons And Ions ◽  
Spatial Depth ◽  
Minimum Surface Area ◽  
Physical Principles

An integral and of prime importance of any microtopography and microanalysis instrument system is its electron, x-ray and ion detector(s). The resolution and sensitivity of the electron microscope (TEM, SEM, STEM) and microanalyzers (SIMS and electron probe x-ray microanalyzers) are closely related to those of the sensing and recording devices incorporated with them.Table I lists characteristic sensitivities, minimum surface area and depth analyzed by various methods. Smaller ion, electron and x-ray beam diameters than those listed, are possible with currently available electromagnetic or electrostatic columns. Therefore, improvements in sensitivity and spatial/depth resolution of microanalysis will follow that of the detectors. In most of these methods, the sample surface is subjected to a stationary, line or raster scanning photon, electron or ion beam. The resultant radiation: photons (low energy) or high energy (x-rays), electrons and ions are detected and analyzed.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Electron and ion irradiation-induced dissolution of mechanical twins in the intermetalic U3Si: An in situ HVEM study

1989 ◽  
Vol 47 ◽  
pp. 652-653
Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher
Keyword(s):  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
High Energy ◽  
Mechanical Twinning ◽  
In Situ Experiments

The uranium silicides, including U3Si, are under study as candidate low enrichment nuclear fuels. Ion beam simulations of the in-reactor behavior of such materials are performed because a similar damage structure can be produced in hours by energetic heavy ions which requires years in actual reactor tests. This contribution treats one aspect of the microstructural behavior of U3Si under high energy electron irradiation and low dose energetic heavy ion irradiation and is based on in situ experiments, performed at the HVEM-Tandem User Facility at Argonne National Laboratory. This Facility interfaces a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter to a 1.2 MeV AEI high voltage electron microscope, which allows a wide variety of in situ ion beam experiments to be performed with simultaneous irradiation and electron microscopy or diffraction.At elevated temperatures, U3Si exhibits the ordered AuCu3 structure. On cooling below 1058 K, the intermetallic transforms, evidently martensitically, to a body-centered tetragonal structure (alternatively, the structure may be described as face-centered tetragonal, which would be fcc except for a 1 pet tetragonal distortion). Mechanical twinning accompanies the transformation; however, diferences between electron diffraction patterns from twinned and non-twinned martensite plates could not be distinguished.

Analysis of Voltage Contrast in Secondary Electron Images Using a High-Energy Electron Spectrometer

2019 ◽  
Author(s):  
Natsuko Asano ◽  
Shunsuke Asahina ◽  
Natasha Erdman
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
High Energy ◽  
Secondary Electrons ◽  
Analysis Technique ◽  
Quantitative Understanding ◽  
Voltage Contrast ◽  
Acceleration Voltage ◽  
Failure Localization

Abstract Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.

Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging

2007 ◽  
Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
High Energy ◽  
Advanced Technology ◽  
High Energy Electron ◽  
Common Assumption ◽  
Dual Beam ◽  
Imaging Methodology

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.

Organic solvent-assisted free-standing Li2MnO3·LiNi1/3Co1/3Mn1/3O2 on 3D graphene as a high energy density cathode

2015 ◽  
Vol 51 (91) ◽  
pp. 16381-16384 ◽  
Author(s):  
Yuelong Xin ◽  
Liya Qi ◽  
Yiwei Zhang ◽  
Zicheng Zuo ◽  
Henghui Zhou ◽  
...  
Keyword(s):  
Energy Density ◽  
Organic Solvent ◽  
Freeze Drying ◽  
Large Scale ◽  
High Energy ◽  
High Energy Density ◽  
Free Standing ◽  
3D Graphene ◽  
Active Particles

A novel organic solvent-assisted freeze-drying pathway, which can effectively protect and uniformly distribute active particles, is developed to fabricate a free-standing Li2MnO3·LiNi1/3Co1/3Mn1/3O2 (LR)/rGO electrode on a large scale.

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