Cesium-Enhanced R. F. Magnetron Deposition of Carbon Nitride and Diamond-Like Carbon Films

1997 ◽  
Vol 498 ◽  
Author(s):  
I. H. Murzin ◽  
M. A. Hussain ◽  
G. S. Tompa

ABSTRACTWe report the design, manufacturing, and testing of a new cesium enhanced negative carbon ion source that can be useful to synthesize hard and/or electron emitting carbon nitride and diamond-like carbon (DLC) thin films. The design of the source includes a conventional magnetron-sputtering gun, low voltage ion extraction lenses, and a cesium oven to provide cesium vapor for formation of a fractional mono layer of Cs on the carbon target. Cs reduces the surface work function of the carbon target and enhances the emission of negative carbon ions. Argon and argon-nitrogen gas mixtures were used to ignite and sustain the plasma in the chamber. We compare the properties of carbon nitride and DLC films deposited with and without cesium. Nitrogen composition in the Ar-N2 gas mixture was observed to be an important process parameter affecting mechanical properties of the film. The effect of the Cs oven temperature on deposition rate and current absorbed at the substrate was also investigated for RF powers from 0 to 150 W.

2007 ◽  
Vol 14 (04) ◽  
pp. 735-738 ◽  
Author(s):  
MAKSYM RYBACHUK ◽  
JOHN M. BELL

An alternative approach to a sputtering process was examined where a single incident beam of Xe ions was used to simultaneously sputter a carbon target and bombard a growing film. The hypothesis that by positioning a substrate at grazing angles to the central axis of the ion beam, the additional energy provided will be beneficial to the formation of sp3 bonding. Amorphous carbon (a- C ) and diamond-like carbon (DLC) films were synthesized by sputtering a graphite target from a Kaufmann-type ion source. Experimental results revealed that when a substrate was placed at grazing angles due to a secondary resputtering process, it was not possible to fabricate DLCs but only sp2-rich polymeric a- C . For DLC synthesis the optimal angles of the target and the substrate to the ion flux were found to be 30° and 0°, respectively, and the ion energies of 0.8–1 keV.


2002 ◽  
Vol 73 (2) ◽  
pp. 758-760 ◽  
Author(s):  
Y. Gotoh ◽  
K. Nakajima ◽  
T. Hagiwara ◽  
H. Tsuji ◽  
J. Ishikawa

1993 ◽  
Vol 316 ◽  
Author(s):  
Gregory P. Johnston ◽  
Prabhat Tiwari ◽  
Donald J. Rej ◽  
Harold A. Davis ◽  
William J. Waganaar ◽  
...  

ABSTRACTDiamond-like carbon films were prepared by high intensity pulsed ion beam ablation of graphite targets. A 350 keV, 35 kA, 400 ns pulse width beam, consisting primarily of carbon ions and protons, was focused onto a graphite target at a fluence of 15-45 J/cm2. Films were deposited onto substrates positioned in an angular array from normal to the target to 90° off normal. Deposition rates up to 30 nm per pulse, corresponding to an instantaneous deposition rate greater than 1 mm/sec, have been observed. Electrical resistivities between 1 and 1000 ohm·cm were measured for these films. XRD scans showed that no crystalline structure developed in the films. SEM revealed that the bulk of the films contain material with feature sizes on the order of 100 nm, but micron size particles were deposited as well. Both Raman and electron energy loss spectroscopy indicated significant amounts of sp3 bonded carbon present in most of the films.


1988 ◽  
Vol 53 (3) ◽  
pp. 187-188 ◽  
Author(s):  
S. S. Wagal ◽  
E. M. Juengerman ◽  
C. B. Collins

Vacuum ◽  
2010 ◽  
Vol 84 (9) ◽  
pp. 1133-1137 ◽  
Author(s):  
Š. Meškinis ◽  
V. Kopustinskas ◽  
A. Tamulevičienė ◽  
S. Tamulevičius ◽  
G. Niaura ◽  
...  

2001 ◽  
Vol 10 (3-7) ◽  
pp. 984-988 ◽  
Author(s):  
Sharif Mohammad Mominuzzaman ◽  
Hiroshi Ebisu ◽  
Tetsuo Soga ◽  
Takashi Jimbo ◽  
Masayoshi Umeno

2003 ◽  
Vol 57 (22-23) ◽  
pp. 3479-3485 ◽  
Author(s):  
S. Gupta ◽  
R.K. Roy ◽  
B. Deb ◽  
S. Kundu ◽  
A.K. Pal

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